Overview
The STP34NM60ND is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ V technology. This device is renowned for its extremely low on-resistance and superior switching performance, making it ideal for demanding high-efficiency converter applications. Available in the TO-220 package, it combines a vertical structure with ST's proprietary strip layout, resulting in one of the world’s lowest RDS(on) values among silicon-based Power MOSFETs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 29 | A |
| Pulsed Drain Current (IDM) | 116 | A |
| Total Dissipation (PTOT) at TC = 25 °C | 250 | W |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 14.5 A | 0.097 - 0.110 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 0.5 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Max. Operating Junction Temperature (Tj) | 150 | °C |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
- Intrinsic fast-recovery body diode
- World’s best RDS(on) in TO-220 amongst fast recovery diode devices
- ECOPACK® packages available for environmental compliance
Applications
The STP34NM60ND is particularly suited for high-efficiency converter applications, including but not limited to:
- Switching power supplies
- DC-DC converters
- Motor control and drives
- Power factor correction (PFC) circuits
Q & A
- What is the maximum drain-source voltage (VDS) of the STP34NM60ND?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current (ID) at TC = 25 °C?
The continuous drain current (ID) at TC = 25 °C is 29 A.
- What is the typical on-resistance (RDS(on)) of the STP34NM60ND?
The typical on-resistance (RDS(on)) is 0.097 Ω at VGS = 10 V and ID = 14.5 A.
- What are the thermal resistance values for the STP34NM60ND?
The thermal resistance junction-case (Rthj-case) is 0.5 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.
- What is the maximum operating junction temperature (Tj) for this MOSFET?
The maximum operating junction temperature (Tj) is 150 °C.
- What are the key features of the STP34NM60ND?
Key features include 100% avalanche testing, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.
- In which packages is the STP34NM60ND available?
The STP34NM60ND is available in the TO-220 package.
- What are some typical applications for the STP34NM60ND?
Typical applications include switching power supplies, DC-DC converters, motor control and drives, and power factor correction (PFC) circuits.
- Does the STP34NM60ND have environmental compliance options?
- What technology is used in the STP34NM60ND?
The STP34NM60ND is developed using STMicroelectronics' advanced MDmesh™ V technology.
