FQB34P10TM-F085P
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onsemi FQB34P10TM-F085P

Manufacturer No:
FQB34P10TM-F085P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 33.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD8P10TM-F085 is a P-Channel enhancement mode power field effect transistor produced by onsemi using their proprietary planar stripe, DMOS technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -100 V
Continuous Drain Current (ID) at TC = 25°C -6.6 A
Pulsed Drain Current (IDM) -26.4 A
Gate-Source Voltage (VGSS) ±30 V
Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V, ID = -3.3 A 0.53 Ω Ω
Gate Threshold Voltage (VGS(th)) -2.0 to -4.0 V
Thermal Resistance, Junction to Case (RθJC) 2.84 °C/W °C/W
Operating and Storage Temperature Range (TJ, TSTG) -55 to +150 °C

Key Features

  • Low on-state resistance (RDS(on) = 0.53 Ω @ VGS = -10 V)
  • Low Gate Charge (Typ. 12 nC)
  • Low Crss (Typ. 30 pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • Qualified to AEC-Q101
  • RoHS Compliant

Applications

The FQD8P10TM-F085 is well-suited for various low-voltage applications, including:

  • Audio amplifiers
  • High efficiency switching DC/DC converters
  • DC motor control

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FQD8P10TM-F085?

    The maximum drain-source voltage (VDSS) is -100 V.

  2. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is -6.6 A.

  3. What is the typical gate charge (Qg) of the FQD8P10TM-F085?

    The typical gate charge (Qg) is 12 nC.

  4. Is the FQD8P10TM-F085 RoHS compliant?

    Yes, the FQD8P10TM-F085 is RoHS compliant.

  5. What are the operating and storage temperature ranges for the FQD8P10TM-F085?

    The operating and storage temperature ranges are -55 to +150°C.

  6. What is the thermal resistance, junction to case (RθJC), of the FQD8P10TM-F085?

    The thermal resistance, junction to case (RθJC), is 2.84 °C/W.

  7. What are some typical applications for the FQD8P10TM-F085?

    Typical applications include audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

  8. Is the FQD8P10TM-F085 qualified to AEC-Q101 standards?

    Yes, the FQD8P10TM-F085 is qualified to AEC-Q101 standards.

  9. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 300°C for 5 seconds.

  10. What is the typical forward transconductance (gFS) of the FQD8P10TM-F085?

    The typical forward transconductance (gFS) is 4.1 S.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 16.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2910 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 155W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB34P10TM-F085P FQB34P10TM-F085
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33.5A (Tc) 33.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 16.75A, 10V 60mOhm @ 16.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2910 pF @ 25 V 2910 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.75W (Ta), 155W (Tc) 3.75W (Ta), 155W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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