FQB34P10TM-F085P
  • Share:

onsemi FQB34P10TM-F085P

Manufacturer No:
FQB34P10TM-F085P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 33.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD8P10TM-F085 is a P-Channel enhancement mode power field effect transistor produced by onsemi using their proprietary planar stripe, DMOS technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -100 V
Continuous Drain Current (ID) at TC = 25°C -6.6 A
Pulsed Drain Current (IDM) -26.4 A
Gate-Source Voltage (VGSS) ±30 V
Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V, ID = -3.3 A 0.53 Ω Ω
Gate Threshold Voltage (VGS(th)) -2.0 to -4.0 V
Thermal Resistance, Junction to Case (RθJC) 2.84 °C/W °C/W
Operating and Storage Temperature Range (TJ, TSTG) -55 to +150 °C

Key Features

  • Low on-state resistance (RDS(on) = 0.53 Ω @ VGS = -10 V)
  • Low Gate Charge (Typ. 12 nC)
  • Low Crss (Typ. 30 pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • Qualified to AEC-Q101
  • RoHS Compliant

Applications

The FQD8P10TM-F085 is well-suited for various low-voltage applications, including:

  • Audio amplifiers
  • High efficiency switching DC/DC converters
  • DC motor control

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FQD8P10TM-F085?

    The maximum drain-source voltage (VDSS) is -100 V.

  2. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is -6.6 A.

  3. What is the typical gate charge (Qg) of the FQD8P10TM-F085?

    The typical gate charge (Qg) is 12 nC.

  4. Is the FQD8P10TM-F085 RoHS compliant?

    Yes, the FQD8P10TM-F085 is RoHS compliant.

  5. What are the operating and storage temperature ranges for the FQD8P10TM-F085?

    The operating and storage temperature ranges are -55 to +150°C.

  6. What is the thermal resistance, junction to case (RθJC), of the FQD8P10TM-F085?

    The thermal resistance, junction to case (RθJC), is 2.84 °C/W.

  7. What are some typical applications for the FQD8P10TM-F085?

    Typical applications include audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

  8. Is the FQD8P10TM-F085 qualified to AEC-Q101 standards?

    Yes, the FQD8P10TM-F085 is qualified to AEC-Q101 standards.

  9. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 300°C for 5 seconds.

  10. What is the typical forward transconductance (gFS) of the FQD8P10TM-F085?

    The typical forward transconductance (gFS) is 4.1 S.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 16.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2910 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 155W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
88

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQB34P10TM-F085P FQB34P10TM-F085
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33.5A (Tc) 33.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 16.75A, 10V 60mOhm @ 16.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2910 pF @ 25 V 2910 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.75W (Ta), 155W (Tc) 3.75W (Ta), 155W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD