Overview
The FQD7P06TM_F080 is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance, provide superior switching performance, and offer high avalanche energy strength. The device is particularly suited for various applications requiring efficient power management and high reliability.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Polarity | P-Channel |
| Drain-Source Breakdown Voltage (Vds) | -60 V |
| Drain Current (Id) | -5.4 A |
| On-State Resistance (Rds(on)) | 451 mΩ (Max.) @ Vgs = -10 V, Id = -2.7 A |
| Gate-Source Voltage (Vgs) | ±25 V |
| Gate-Source Threshold Voltage (Vgs(th)) | -4 V |
| Gate Charge (Qg) | 6.3 nC (Typ.) @ Vgs = 4.5 V |
| Input Capacitance (Ciss) | 225 pF (Typ.) |
| Reverse Transfer Capacitance (Crss) | 25 pF (Typ.) |
| Package Type | DPAK-3 (TO-252-3) |
Key Features
- Low on-state resistance (Rds(on)) of 451 mΩ (Max.) @ Vgs = -10 V, Id = -2.7 A
- Low gate charge (Typ. 6.3 nC)
- Low reverse transfer capacitance (Crss) of 25 pF (Typ.)
- 100% avalanche tested for reliability
- High avalanche energy strength
Applications
- Switched mode power supplies
- Audio amplifiers
- DC motor control
- Variable switching power applications
- LED TV and other consumer electronics
Q & A
- What is the drain-source breakdown voltage of the FQD7P06TM_F080 MOSFET?
The drain-source breakdown voltage (Vds) is -60 V.
- What is the maximum drain current (Id) of the FQD7P06TM_F080?
The maximum drain current (Id) is -5.4 A.
- What is the on-state resistance (Rds(on)) of the FQD7P06TM_F080?
The on-state resistance (Rds(on)) is 451 mΩ (Max.) @ Vgs = -10 V, Id = -2.7 A.
- What is the gate-source threshold voltage (Vgs(th)) of the FQD7P06TM_F080?
The gate-source threshold voltage (Vgs(th)) is -4 V.
- What is the typical gate charge (Qg) of the FQD7P06TM_F080?
The typical gate charge (Qg) is 6.3 nC @ Vgs = 4.5 V.
- What is the package type of the FQD7P06TM_F080?
The package type is DPAK-3 (TO-252-3).
- Is the FQD7P06TM_F080 100% avalanche tested?
- What are some common applications of the FQD7P06TM_F080?
- Why is the FQD7P06TM_F080 suitable for high-frequency applications?
- Where can I find detailed specifications and datasheets for the FQD7P06TM_F080?
