Overview
The FQD7P06TM_NB82050 is a P-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using onsemi's proprietary planar stripe and DMOS technology, which is designed to reduce on-state resistance and provide superior switching performance and high avalanche energy strength. This advanced technology makes the FQD7P06TM_NB82050 suitable for a variety of applications, including switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -60 V |
| Drain Current (ID) | -5.4 A |
| On-State Resistance (RDS(on)) | 451 mΩ (Max.) @ VGS = -10 V, ID = -2.7 A |
| Gate-Source Voltage (VGS) | ±25 V |
| Gate-Source Threshold Voltage (VGS(th)) | -4 V (Max.) |
| Gate Charge (Qg) | 6.3 nC (Typ.) @ VGS = -10 V |
| Input Capacitance (Ciss) | 225 pF (Typ.) |
| Output Capacitance (Coss) | 110 pF (Typ.) |
| Reverse Transfer Capacitance (Crss) | 25 pF (Typ.) |
| Package Type | DPAK-3 / TO-252-3 |
Key Features
- Low on-state resistance (RDS(on)) of 451 mΩ (Max.) @ VGS = -10 V, ID = -2.7 A
- Low gate charge (Qg) of 6.3 nC (Typ.) @ VGS = -10 V
- Low reverse transfer capacitance (Crss) of 25 pF (Typ.)
- 100% avalanche tested for robustness
- Advanced DMOS technology for superior switching performance and high avalanche energy strength
Applications
- Switched mode power supplies
- Audio amplifiers
- DC motor control
- Variable switching power applications
- LED TV and other consumer electronics
Q & A
- What is the channel polarity of the FQD7P06TM_NB82050 MOSFET?
The FQD7P06TM_NB82050 is a P-Channel MOSFET. - What is the maximum drain-source voltage (VDS) of the FQD7P06TM_NB82050?
The maximum drain-source voltage is -60 V. - What is the maximum drain current (ID) of the FQD7P06TM_NB82050?
The maximum drain current is -5.4 A. - What is the on-state resistance (RDS(on)) of the FQD7P06TM_NB82050?
The on-state resistance is 451 mΩ (Max.) @ VGS = -10 V, ID = -2.7 A. - What is the gate-source threshold voltage (VGS(th)) of the FQD7P06TM_NB82050?
The gate-source threshold voltage is -4 V (Max.). - What is the typical gate charge (Qg) of the FQD7P06TM_NB82050?
The typical gate charge is 6.3 nC @ VGS = -10 V. - What are the typical input and output capacitances of the FQD7P06TM_NB82050?
The typical input capacitance (Ciss) is 225 pF, and the typical output capacitance (Coss) is 110 pF. - What is the typical reverse transfer capacitance (Crss) of the FQD7P06TM_NB82050?
The typical reverse transfer capacitance is 25 pF. - Is the FQD7P06TM_NB82050 avalanche tested?
Yes, the FQD7P06TM_NB82050 is 100% avalanche tested. - What are some common applications of the FQD7P06TM_NB82050?
Common applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
