NTD4809NT4G
  • Share:

onsemi NTD4809NT4G

Manufacturer No:
NTD4809NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 9.6A/58A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4809NT4G is a power MOSFET produced by onsemi, designed for high-performance applications. This N-Channel MOSFET is packaged in a DPAK (Pb-Free) and is known for its low on-resistance and high current handling capabilities. It is AEC Q101 qualified, ensuring reliability in automotive and other demanding environments. The device is also RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (RJA) at 25°C ID 13.1 A
Continuous Drain Current (RJA) at 85°C ID 10.1 A
Power Dissipation (RJA) at 25°C PD 2.63 W
Pulsed Drain Current IDM 130 A
Operating Junction and Storage Temperature TJ, Tstg −55 to 175 °C
Drain-to-Source On Resistance (RDS(on)) RDS(on) 7.0 - 9.0 mΩ (VGS = 10 to 11.5 V, ID = 30 A)
Gate Threshold Voltage (VGS(TH)) VGS(TH) 1.5 - 2.5 V V

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • AEC Q101 qualified for automotive reliability
  • Pb-Free and RoHS compliant
  • High current handling capability up to 58 A
  • Low thermal resistance (RJA = 57.1 °C/W)

Applications

  • CPU Power Delivery
  • DC-DC Converters
  • Low Side Switching
  • Automotive systems due to AEC Q101 qualification
  • High-power electronic devices requiring efficient switching and low thermal resistance

Q & A

  1. What is the maximum drain-to-source voltage of the NTD4809NT4G?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C?

    The continuous drain current (ID) at 25°C is 13.1 A.

  3. What is the power dissipation at 25°C?

    The power dissipation (PD) at 25°C is 2.63 W.

  4. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is −55 to 175 °C.

  5. What is the typical on-resistance (RDS(on))?

    The typical on-resistance (RDS(on)) is 7.0 to 9.0 mΩ (VGS = 10 to 11.5 V, ID = 30 A).

  6. Is the NTD4809NT4G AEC Q101 qualified?
  7. What are the common applications of the NTD4809NT4G?
  8. Is the NTD4809NT4G Pb-Free and RoHS compliant?
  9. What is the maximum pulsed drain current? DM) is 130 A.

  10. What is the thermal resistance (RJA)? JA) is 57.1 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 11.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1456 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.67
1,174

Please send RFQ , we will respond immediately.

Same Series
NTD4809N-1G
NTD4809N-1G
MOSFET N-CH 30V 9.6A/58A IPAK
NTD4809N-35G
NTD4809N-35G
MOSFET N-CH 30V 9.6A/58A IPAK
NVD4809NT4G
NVD4809NT4G
MOSFET N-CH 30V 9.6A/58A DPAK-3

Similar Products

Part Number NTD4809NT4G NTD4909NT4G NTD4804NT4G NTD4805NT4G NTD4806NT4G NTD4808NT4G NTD4809NAT4G NTD4809NHT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.6A (Ta), 58A (Tc) 8.8A (Ta), 41A (Tc) 14.5A (Ta), 124A (Tc) 12.7A (Ta), 95A (Tc) 11.3A (Ta), 79A (Tc) 10A (Ta), 63A (Tc) 9.6A (Ta), 58A (Tc) 9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V 8mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V 6mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 11.5 V 17.5 nC @ 10 V 40 nC @ 4.5 V 48 nC @ 11.5 V 23 nC @ 4.5 V 13 nC @ 4.5 V 13 nC @ 4.5 V 15 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1456 pF @ 12 V 1314 pF @ 15 V 4490 pF @ 12 V 2865 pF @ 12 V 2142 pF @ 12 V 1538 pF @ 12 V 1456 pF @ 12 V 2155 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.4W (Ta), 52W (Tc) 1.37W (Ta), 29.4W (Tc) 1.43W (Ta), 107W (Tc) 1.41W (Ta), 79W (Tc) 1.4W (Ta), 68W (Tc) 1.4W (Ta), 54.6W (Tc) 1.3W (Ta), 52W (Tc) 1.3W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223