NTD4809NT4G
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onsemi NTD4809NT4G

Manufacturer No:
NTD4809NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 9.6A/58A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4809NT4G is a power MOSFET produced by onsemi, designed for high-performance applications. This N-Channel MOSFET is packaged in a DPAK (Pb-Free) and is known for its low on-resistance and high current handling capabilities. It is AEC Q101 qualified, ensuring reliability in automotive and other demanding environments. The device is also RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (RJA) at 25°C ID 13.1 A
Continuous Drain Current (RJA) at 85°C ID 10.1 A
Power Dissipation (RJA) at 25°C PD 2.63 W
Pulsed Drain Current IDM 130 A
Operating Junction and Storage Temperature TJ, Tstg −55 to 175 °C
Drain-to-Source On Resistance (RDS(on)) RDS(on) 7.0 - 9.0 mΩ (VGS = 10 to 11.5 V, ID = 30 A)
Gate Threshold Voltage (VGS(TH)) VGS(TH) 1.5 - 2.5 V V

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • AEC Q101 qualified for automotive reliability
  • Pb-Free and RoHS compliant
  • High current handling capability up to 58 A
  • Low thermal resistance (RJA = 57.1 °C/W)

Applications

  • CPU Power Delivery
  • DC-DC Converters
  • Low Side Switching
  • Automotive systems due to AEC Q101 qualification
  • High-power electronic devices requiring efficient switching and low thermal resistance

Q & A

  1. What is the maximum drain-to-source voltage of the NTD4809NT4G?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C?

    The continuous drain current (ID) at 25°C is 13.1 A.

  3. What is the power dissipation at 25°C?

    The power dissipation (PD) at 25°C is 2.63 W.

  4. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is −55 to 175 °C.

  5. What is the typical on-resistance (RDS(on))?

    The typical on-resistance (RDS(on)) is 7.0 to 9.0 mΩ (VGS = 10 to 11.5 V, ID = 30 A).

  6. Is the NTD4809NT4G AEC Q101 qualified?
  7. What are the common applications of the NTD4809NT4G?
  8. Is the NTD4809NT4G Pb-Free and RoHS compliant?
  9. What is the maximum pulsed drain current? DM) is 130 A.

  10. What is the thermal resistance (RJA)? JA) is 57.1 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 11.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1456 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

$0.67
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Similar Products

Part Number NTD4809NT4G NTD4909NT4G NTD4804NT4G NTD4805NT4G NTD4806NT4G NTD4808NT4G NTD4809NAT4G NTD4809NHT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.6A (Ta), 58A (Tc) 8.8A (Ta), 41A (Tc) 14.5A (Ta), 124A (Tc) 12.7A (Ta), 95A (Tc) 11.3A (Ta), 79A (Tc) 10A (Ta), 63A (Tc) 9.6A (Ta), 58A (Tc) 9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V 8mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V 6mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 11.5 V 17.5 nC @ 10 V 40 nC @ 4.5 V 48 nC @ 11.5 V 23 nC @ 4.5 V 13 nC @ 4.5 V 13 nC @ 4.5 V 15 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1456 pF @ 12 V 1314 pF @ 15 V 4490 pF @ 12 V 2865 pF @ 12 V 2142 pF @ 12 V 1538 pF @ 12 V 1456 pF @ 12 V 2155 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.4W (Ta), 52W (Tc) 1.37W (Ta), 29.4W (Tc) 1.43W (Ta), 107W (Tc) 1.41W (Ta), 79W (Tc) 1.4W (Ta), 68W (Tc) 1.4W (Ta), 54.6W (Tc) 1.3W (Ta), 52W (Tc) 1.3W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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