NTD4804NT4G
  • Share:

onsemi NTD4804NT4G

Manufacturer No:
NTD4804NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 14.5A/124A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4804NT4G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is housed in a DPAK (Pb-Free) package and is designed to offer low conduction losses, minimal driver losses, and optimized switching performance. The NTD4804NT4G is AEC Q101 qualified, ensuring its reliability in automotive and other demanding applications. It is also Pb-Free and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (RJA) at TA = 25°C ID 19.6 A
Continuous Drain Current (RJA) at TA = 85°C ID 15.2 A
Power Dissipation (RJA) at TA = 25°C PD 2.66 W
Pulsed Drain Current (tp=10 μs) at TA = 25°C IDM 230 A
Operating Junction and Storage Temperature TJ, Tstg -55 to 175 °C
Drain-to-Source On Resistance at VGS = 10 V, ID = 30 A RDS(on) 3.4 to 4.0

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • AEC Q101 qualified for automotive and other demanding applications
  • Pb-Free and RoHS compliant

Applications

  • CPU Power Delivery
  • DC-DC Converters
  • Low Side Switching

Q & A

  1. What is the maximum drain-to-source voltage of the NTD4804NT4G?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C and 85°C?

    The continuous drain current is 19.6 A at 25°C and 15.2 A at 85°C.

  3. What is the power dissipation at 25°C?

    The power dissipation (PD) at 25°C is 2.66 W.

  4. What is the pulsed drain current for a 10 μs pulse at 25°C?

    The pulsed drain current (IDM) for a 10 μs pulse at 25°C is 230 A.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to 175°C.

  6. What is the typical drain-to-source on resistance at VGS = 10 V and ID = 30 A?

    The typical drain-to-source on resistance (RDS(on)) at VGS = 10 V and ID = 30 A is 3.4 to 4.0 mΩ.

  7. Is the NTD4804NT4G AEC Q101 qualified?
  8. Is the NTD4804NT4G Pb-Free and RoHS compliant?
  9. What are some common applications of the NTD4804NT4G?
  10. What package types are available for the NTD4804NT4G?

    The NTD4804NT4G is available in DPAK (Pb-Free) and IPAK (Pb-Free) packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4490 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.43W (Ta), 107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.46
358

Please send RFQ , we will respond immediately.

Same Series
NTD4804N-1G
NTD4804N-1G
MOSFET N-CH 30V 14.5A/124A IPAK
NTD4804N-35G
NTD4804N-35G
MOSFET N-CH 30V 14.5A/124A IPAK

Similar Products

Part Number NTD4804NT4G NTD4808NT4G NTD4854NT4G NTD4806NT4G NTD4904NT4G NTD4805NT4G NTD4809NT4G NTD4804NAT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 25 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 14.5A (Ta), 124A (Tc) 10A (Ta), 63A (Tc) 15.7A (Ta), 128A (Tc) 11.3A (Ta), 79A (Tc) 13A (Ta), 79A (Tc) 12.7A (Ta), 95A (Tc) 9.6A (Ta), 58A (Tc) 14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 10V 8mOhm @ 30A, 10V 3.6mOhm @ 30A, 10V 6mOhm @ 30A, 10V 3.7mOhm @ 30A, 10V 5mOhm @ 30A, 10V 9mOhm @ 30A, 10V 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 4.5 V 13 nC @ 4.5 V 49.2 nC @ 4.5 V 23 nC @ 4.5 V 41 nC @ 10 V 48 nC @ 11.5 V 25 nC @ 11.5 V 40 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4490 pF @ 12 V 1538 pF @ 12 V 4600 pF @ 12 V 2142 pF @ 12 V 3052 pF @ 15 V 2865 pF @ 12 V 1456 pF @ 12 V 4490 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.43W (Ta), 107W (Tc) 1.4W (Ta), 54.6W (Tc) 1.43W (Ta), 93.75W (Tc) 1.4W (Ta), 68W (Tc) 1.4W (Ta), 52W (Tc) 1.41W (Ta), 79W (Tc) 1.4W (Ta), 52W (Tc) 1.43W (Ta), 93.75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP