NTD4804NT4G
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onsemi NTD4804NT4G

Manufacturer No:
NTD4804NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 14.5A/124A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTD4804NT4G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is housed in a DPAK (Pb-Free) package and is designed to offer low conduction losses, minimal driver losses, and optimized switching performance. The NTD4804NT4G is AEC Q101 qualified, ensuring its reliability in automotive and other demanding applications. It is also Pb-Free and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (RJA) at TA = 25°C ID 19.6 A
Continuous Drain Current (RJA) at TA = 85°C ID 15.2 A
Power Dissipation (RJA) at TA = 25°C PD 2.66 W
Pulsed Drain Current (tp=10 μs) at TA = 25°C IDM 230 A
Operating Junction and Storage Temperature TJ, Tstg -55 to 175 °C
Drain-to-Source On Resistance at VGS = 10 V, ID = 30 A RDS(on) 3.4 to 4.0

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • AEC Q101 qualified for automotive and other demanding applications
  • Pb-Free and RoHS compliant

Applications

  • CPU Power Delivery
  • DC-DC Converters
  • Low Side Switching

Q & A

  1. What is the maximum drain-to-source voltage of the NTD4804NT4G?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C and 85°C?

    The continuous drain current is 19.6 A at 25°C and 15.2 A at 85°C.

  3. What is the power dissipation at 25°C?

    The power dissipation (PD) at 25°C is 2.66 W.

  4. What is the pulsed drain current for a 10 μs pulse at 25°C?

    The pulsed drain current (IDM) for a 10 μs pulse at 25°C is 230 A.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to 175°C.

  6. What is the typical drain-to-source on resistance at VGS = 10 V and ID = 30 A?

    The typical drain-to-source on resistance (RDS(on)) at VGS = 10 V and ID = 30 A is 3.4 to 4.0 mΩ.

  7. Is the NTD4804NT4G AEC Q101 qualified?
  8. Is the NTD4804NT4G Pb-Free and RoHS compliant?
  9. What are some common applications of the NTD4804NT4G?
  10. What package types are available for the NTD4804NT4G?

    The NTD4804NT4G is available in DPAK (Pb-Free) and IPAK (Pb-Free) packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4490 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.43W (Ta), 107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
NTD4804N-1G
NTD4804N-1G
MOSFET N-CH 30V 14.5A/124A IPAK
NTD4804N-35G
NTD4804N-35G
MOSFET N-CH 30V 14.5A/124A IPAK

Similar Products

Part Number NTD4804NT4G NTD4808NT4G NTD4854NT4G NTD4806NT4G NTD4904NT4G NTD4805NT4G NTD4809NT4G NTD4804NAT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 25 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 14.5A (Ta), 124A (Tc) 10A (Ta), 63A (Tc) 15.7A (Ta), 128A (Tc) 11.3A (Ta), 79A (Tc) 13A (Ta), 79A (Tc) 12.7A (Ta), 95A (Tc) 9.6A (Ta), 58A (Tc) 14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 10V 8mOhm @ 30A, 10V 3.6mOhm @ 30A, 10V 6mOhm @ 30A, 10V 3.7mOhm @ 30A, 10V 5mOhm @ 30A, 10V 9mOhm @ 30A, 10V 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 4.5 V 13 nC @ 4.5 V 49.2 nC @ 4.5 V 23 nC @ 4.5 V 41 nC @ 10 V 48 nC @ 11.5 V 25 nC @ 11.5 V 40 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4490 pF @ 12 V 1538 pF @ 12 V 4600 pF @ 12 V 2142 pF @ 12 V 3052 pF @ 15 V 2865 pF @ 12 V 1456 pF @ 12 V 4490 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.43W (Ta), 107W (Tc) 1.4W (Ta), 54.6W (Tc) 1.43W (Ta), 93.75W (Tc) 1.4W (Ta), 68W (Tc) 1.4W (Ta), 52W (Tc) 1.41W (Ta), 79W (Tc) 1.4W (Ta), 52W (Tc) 1.43W (Ta), 93.75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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