NTD4805NT4G
  • Share:

onsemi NTD4805NT4G

Manufacturer No:
NTD4805NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 12.7A/95A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4805NT4G is a high-performance, single N-Channel MOSFET produced by onsemi. This device is available in both DPAK and IPAK packages and is designed to minimize conduction, driver, and switching losses. It is particularly suited for applications requiring high current handling and low on-resistance. The NTD4805NT4G is also available with an NVD prefix, which is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS30V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (RJA) at TA = 25°CID17.4A
Continuous Drain Current (RJA) at TA = 85°CID13.5A
Power Dissipation (RJA) at TA = 25°CPD2.65W
Pulsed Drain Current (tp = 10 μs)IDM175A
Operating Junction and Storage TemperatureTJ, Tstg−55 to 175°C
Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 30 ARDS(on)4.3 - 5.0
Gate Threshold VoltageVGS(TH)1.5 - 2.5V

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free and RoHS compliant
  • NVD prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable

Applications

  • CPU Power Delivery
  • DC-DC Converters
  • Low Side Switching

Q & A

  1. What is the maximum drain-to-source voltage of the NTD4805NT4G? The maximum drain-to-source voltage is 30 V.
  2. What is the continuous drain current at 25°C and 85°C? The continuous drain current is 17.4 A at 25°C and 13.5 A at 85°C.
  3. What is the power dissipation at 25°C? The power dissipation is 2.65 W at 25°C.
  4. What is the pulsed drain current? The pulsed drain current is 175 A for a pulse width of 10 μs.
  5. What is the operating junction and storage temperature range? The operating junction and storage temperature range is −55 to 175°C.
  6. What is the typical on-resistance at VGS = 10 V and ID = 30 A? The typical on-resistance is 4.3 - 5.0 mΩ.
  7. Is the NTD4805NT4G Pb-free and RoHS compliant? Yes, the NTD4805NT4G is Pb-free and RoHS compliant.
  8. What are the typical applications of the NTD4805NT4G? Typical applications include CPU power delivery, DC-DC converters, and low side switching.
  9. Is the NVD prefix version AEC-Q101 qualified? Yes, the NVD prefix version is AEC-Q101 qualified and PPAP capable.
  10. What are the package options for the NTD4805NT4G? The device is available in both DPAK and IPAK packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12.7A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 11.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2865 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.41W (Ta), 79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.48
1,719

Please send RFQ , we will respond immediately.

Same Series
NTD4805N-1G
NTD4805N-1G
MOSFET N-CH 30V 12.7A/95A IPAK
NTD4805N-35G
NTD4805N-35G
MOSFET N-CH 30V 12.7A/95A IPAK
NVD4805NT4G
NVD4805NT4G
MOSFET N-CH 30V 12.7A/95A DPAK

Similar Products

Part Number NTD4805NT4G NTD4815NT4G NTD4808NT4G NTD4855NT4G NTD4865NT4G NTD4905NT4G NTD4806NT4G NTD4809NT4G NTD4804NT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 25 V 25 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 95A (Tc) 6.9A (Ta), 35A (Tc) 10A (Ta), 63A (Tc) 14A (Ta), 98A (Tc) 8.5A (Ta), 44A (Tc) 12A (Ta), 67A (Tc) 11.3A (Ta), 79A (Tc) 9.6A (Ta), 58A (Tc) 14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V 15mOhm @ 30A, 10V 8mOhm @ 30A, 10V 4.3mOhm @ 30A, 10V 10.9mOhm @ 30A, 10V 4.5mOhm @ 30A, 10V 6mOhm @ 30A, 10V 9mOhm @ 30A, 10V 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 11.5 V 6.6 nC @ 4.5 V 13 nC @ 4.5 V 32.7 nC @ 4.5 V 10.8 nC @ 4.5 V 33 nC @ 10 V 23 nC @ 4.5 V 25 nC @ 11.5 V 40 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2865 pF @ 12 V 770 pF @ 12 V 1538 pF @ 12 V 2950 pF @ 12 V 827 pF @ 12 V 2340 pF @ 15 V 2142 pF @ 12 V 1456 pF @ 12 V 4490 pF @ 12 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 1.41W (Ta), 79W (Tc) 1.26W (Ta), 32.6W (Tc) 1.4W (Ta), 54.6W (Tc) 1.35W (Ta), 66.7W (Tc) 1.27W (Ta), 33.3W (Tc) 1.4W (Ta), 44W (Tc) 1.4W (Ta), 68W (Tc) 1.4W (Ta), 52W (Tc) 1.43W (Ta), 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP