NTD4904NT4G
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onsemi NTD4904NT4G

Manufacturer No:
NTD4904NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 13A/79A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4904NT4G is a high-performance N-channel power MOSFET produced by onsemi. This device is designed to offer excellent electrical characteristics, making it suitable for a wide range of applications that require high power handling and efficiency. The MOSFET features a single N-channel configuration and is packaged in the IPAK (TO-251) package, which is known for its compact size and good thermal dissipation properties.

Key Specifications

ParameterValue
Continuous Drain Current (Id)17.8 A
Drain-Source Resistance (Rds On)3.7 mOhms
Maximum Operating Temperature+175 °C
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.052 nF
Maximum Power Dissipation1.4 W
Voltage Rating (Vds)30 V
Pulse Drain Current (Idp)79 A

Key Features

  • High continuous drain current of 17.8 A, making it suitable for high-power applications.
  • Low drain-source resistance (Rds On) of 3.7 mOhms, which minimizes power losses and enhances efficiency.
  • High maximum operating temperature of +175 °C, allowing for reliable operation in demanding environments.
  • Compact IPAK (TO-251) package for good thermal dissipation and space-saving design.
  • High gate to source voltage rating of 20 V, providing robust gate drive capability.

Applications

The NTD4904NT4G is versatile and can be used in various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial control systems, including robotics and automation.
  • Consumer electronics requiring high power handling, such as gaming consoles and high-end audio equipment.

Q & A

  1. What is the continuous drain current of the NTD4904NT4G?
    The continuous drain current is 17.8 A.
  2. What is the maximum operating temperature of the NTD4904NT4G?
    The maximum operating temperature is +175 °C.
  3. What is the drain-source resistance (Rds On) of the NTD4904NT4G?
    The drain-source resistance (Rds On) is 3.7 mOhms.
  4. What is the gate to source voltage rating of the NTD4904NT4G?
    The gate to source voltage rating is 20 V.
  5. What package type is the NTD4904NT4G available in?
    The NTD4904NT4G is available in the IPAK (TO-251) package.
  6. What are some common applications for the NTD4904NT4G?
    Common applications include power supplies, motor control systems, automotive systems, industrial control systems, and consumer electronics requiring high power handling.
  7. What is the maximum power dissipation of the NTD4904NT4G?
    The maximum power dissipation is 1.4 W.
  8. What is the input capacitance of the NTD4904NT4G?
    The input capacitance is 3.052 nF.
  9. What is the voltage rating (Vds) of the NTD4904NT4G?
    The voltage rating (Vds) is 30 V.
  10. What is the pulse drain current (Idp) of the NTD4904NT4G?
    The pulse drain current (Idp) is 79 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3052 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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Same Series
NTD4904N-35G
NTD4904N-35G
MOSFET N-CH 30V 13A/79A IPAK

Similar Products

Part Number NTD4904NT4G NTD4905NT4G NTD4906NT4G NTD4909NT4G NTD4804NT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 79A (Tc) 12A (Ta), 67A (Tc) 10.3A (Ta), 54A (Tc) 8.8A (Ta), 41A (Tc) 14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 30A, 10V 4.5mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V 8mOhm @ 30A, 10V 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 33 nC @ 10 V 24 nC @ 10 V 17.5 nC @ 10 V 40 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3052 pF @ 15 V 2340 pF @ 15 V 1932 pF @ 15 V 1314 pF @ 15 V 4490 pF @ 12 V
FET Feature - - - - -
Power Dissipation (Max) 1.4W (Ta), 52W (Tc) 1.4W (Ta), 44W (Tc) 1.38W (Ta), 37.5W (Tc) 1.37W (Ta), 29.4W (Tc) 1.43W (Ta), 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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