NTD4904N-35G
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onsemi NTD4904N-35G

Manufacturer No:
NTD4904N-35G
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 30V 13A/79A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTD4904N-35G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is housed in an IPAK package with trimmed leads and is designed to offer low conduction losses, minimal driver losses, and optimized switching performance. It is part of onsemi's lineup of Pb-free devices, ensuring environmental compliance and reliability.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS30V
Gate-to-Source VoltageVGS−20V
Continuous Drain Current (RΣJA) at TA = 25°CID17.8A
Continuous Drain Current (RΣJA) at TA = 100°CID12.6A
Power Dissipation (RΣJA) at TA = 25°CPD2.6W
Pulsed Drain Current (tp = 10 μs) at TA = 25°CIDM316A
Operating Junction and Storage TemperatureTJ, Tstg−55 to 175°C
Gate Threshold VoltageVGS(TH)1.0 to 2.2V
Drain-to-Source On Resistance at VGS = 10 V, ID = 30 ARDS(on)3.0 to 3.7
Lead Temperature for Soldering PurposesTL260°C

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free package for environmental compliance
  • High continuous drain current and power dissipation capabilities
  • Robust thermal performance with low junction-to-case thermal resistance

Applications

  • CPU Power Delivery
  • DC-DC Converters
  • Other high-power switching applications requiring low on-resistance and high current handling

Q & A

  1. What is the maximum drain-to-source voltage of the NTD4904N-35G? The maximum drain-to-source voltage is 30 V.
  2. What is the continuous drain current at 25°C for this MOSFET? The continuous drain current at 25°C is 17.8 A.
  3. What is the gate threshold voltage range for this device? The gate threshold voltage range is from 1.0 V to 2.2 V.
  4. What are the typical on-resistance values for this MOSFET? The typical on-resistance values are 3.0 mΩ to 3.7 mΩ at VGS = 10 V and ID = 30 A.
  5. Is the NTD4904N-35G Pb-free? Yes, the NTD4904N-35G is a Pb-free device.
  6. What are the operating junction and storage temperature ranges? The operating junction and storage temperature ranges are from -55°C to 175°C.
  7. What is the maximum pulsed drain current for this device? The maximum pulsed drain current is 316 A for a pulse width of 10 μs.
  8. What are the typical applications for the NTD4904N-35G? Typical applications include CPU power delivery and DC-DC converters.
  9. What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260°C.
  10. What package type does the NTD4904N-35G come in? The NTD4904N-35G comes in an IPAK package with trimmed leads.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3052 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
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Same Series
NTD4904N-35G
NTD4904N-35G
MOSFET N-CH 30V 13A/79A IPAK

Similar Products

Part Number NTD4904N-35G NTD4906N-35G NTD4909N-35G NTD4905N-35G NTD4804N-35G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 79A (Tc) 10.3A (Ta), 54A (Tc) 8.8A (Ta), 41A (Tc) 12A (Ta), 67A (Tc) 14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V 8mOhm @ 30A, 10V 4.5mOhm @ 30A, 10V 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 24 nC @ 10 V 17.5 nC @ 10 V 33 nC @ 10 V 40 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3052 pF @ 15 V 1932 pF @ 15 V 1314 pF @ 15 V 2340 pF @ 15 V 4490 pF @ 12 V
FET Feature - - - - -
Power Dissipation (Max) 1.4W (Ta), 52W (Tc) 1.38W (Ta), 37.5W (Tc) 1.37W (Ta), 29.4W (Tc) 1.4W (Ta), 44W (Tc) 1.43W (Ta), 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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