STP6N120K3
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STMicroelectronics STP6N120K3

Manufacturer No:
STP6N120K3
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1200V 6A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP6N120K3 is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH3™ technology family, which offers enhanced performance and reliability. Although the STP6N120K3 is currently obsolete and no longer manufactured, it remains a significant component in the history of power MOSFET development. Here is an overview of its key characteristics and applications.

Key Specifications

ParameterValue
Vdss (Drain-Source Voltage)1200 V
Vgs (Gate-Source Voltage)30 V
ID (Continuous Drain Current)6 A
Rds(on) (On-Resistance)1.95 Ω (typical)
Power Dissipation150 W
PackageTO220-3

Key Features

  • SuperMESH3™ Technology: Enhances performance with improved switching characteristics and lower on-resistance.
  • High Voltage Capability: Rated for 1200 V drain-source voltage, making it suitable for high-voltage applications.
  • Low On-Resistance: Typical on-resistance of 1.95 Ω, reducing power losses during operation.
  • Avalanche Tested: 100% avalanche tested to ensure robustness against transient conditions.
  • Zener-Protected: Includes Zener protection to safeguard against voltage spikes.

Applications

  • Flyback Converters: Ideal for use in flyback converters due to its high voltage and current handling capabilities.
  • LED Lighting: Suitable for LED lighting applications requiring high reliability and efficiency.
  • Power Supplies: Can be used in various power supply designs where high voltage and current are necessary.

Q & A

  1. What is the maximum drain-source voltage of the STP6N120K3?
    The maximum drain-source voltage (Vdss) is 1200 V.
  2. What is the typical on-resistance of the STP6N120K3?
    The typical on-resistance (Rds(on)) is 1.95 Ω.
  3. What is the continuous drain current rating of the STP6N120K3?
    The continuous drain current (ID) is 6 A.
  4. What package type is the STP6N120K3 available in?
    The STP6N120K3 is available in the TO220-3 package.
  5. Is the STP6N120K3 still in production?
    No, the STP6N120K3 is obsolete and no longer manufactured.
  6. What technology does the STP6N120K3 use?
    The STP6N120K3 uses STMicroelectronics' SuperMESH3™ technology.
  7. What are some common applications for the STP6N120K3?
    Common applications include flyback converters, LED lighting, and power supplies.
  8. Does the STP6N120K3 have any built-in protection features?
    Yes, it includes Zener protection and is 100% avalanche tested.
  9. What is the power dissipation rating of the STP6N120K3?
    The power dissipation rating is 150 W.
  10. Where can I find substitutes for the STP6N120K3?
    Substitutes can be found through distributors like Digi-Key, Mouser, and other electronic component suppliers.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1050 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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