Overview
The NVMFS5C460NLWFT3G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for compact and efficient power management in various applications. It features a small footprint in a DFNW5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 78 | A |
| Drain-to-Source On Resistance (VGS = 4.5 V, ID = 35 A) | RDS(on) | 5.8 - 7.2 | mΩ |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 35 A) | RDS(on) | 3.7 - 4.5 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Junction-to-Case Thermal Resistance | RJC | 3.0 | °C/W |
| Junction-to-Ambient Thermal Resistance | RJA | 42 | °C/W |
Key Features
- Small Footprint: The device comes in a compact DFNW5 package (5x6 mm), ideal for space-constrained designs.
- Low RDS(on): Minimizes conduction losses with RDS(on) as low as 3.7 mΩ at VGS = 10 V and ID = 35 A.
- Low QG and Capacitance: Reduces driver losses with low total gate charge (QG) and capacitance.
- Wettable Flank Option: The NVMFS5C460NLWFT3G features wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Management: Ideal for power management in DC-DC converters, motor control, and other high-power applications.
- Industrial Control: Used in industrial control systems, power supplies, and other high-reliability environments.
- Consumer Electronics: Applicable in consumer electronics requiring efficient and compact power solutions.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVMFS5C460NLWFT3G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current rating at TC = 25°C?
The continuous drain current rating at TC = 25°C is 78 A.
- What are the typical and maximum values of RDS(on) at VGS = 4.5 V and ID = 35 A?
The typical and maximum values of RDS(on) are 5.8 mΩ and 7.2 mΩ, respectively.
- Is the NVMFS5C460NLWFT3G AEC-Q101 qualified?
Yes, the NVMFS5C460NLWFT3G is AEC-Q101 qualified.
- What is the junction-to-case thermal resistance (RJC) of the device?
The junction-to-case thermal resistance (RJC) is 3.0 °C/W.
- Is the device Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the gate threshold voltage (VGS(TH)) range?
The gate threshold voltage (VGS(TH)) range is 1.2 V to 2.0 V.
- What is the typical turn-on delay time (td(ON)) at VGS = 4.5 V and ID = 35 A?
The typical turn-on delay time (td(ON)) is 9.2 ns.
- What are the package options available for this MOSFET?
The device is available in DFNW5 packages with wettable flanks for enhanced optical inspection.
- What is the forward diode voltage (VSD) at IS = 35 A and TJ = 25°C?
The forward diode voltage (VSD) at IS = 35 A and TJ = 25°C is 0.86 V to 1.2 V.
- What is the reverse recovery time (tRR) at dIs/dt = 100 A/μs and IS = 35 A?
The reverse recovery time (tRR) is 29 ns.
