NVMFS5C460NLWFAFT1G
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Manufacturer No:
NVMFS5C460NLWFAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 21A/78A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5C460NLWFAFT1G is a power MOSFET from ON Semiconductor, designed for high-performance applications requiring low on-resistance and high efficiency. This device is part of the NVMFS series, which is known for its advanced trench technology and robust construction.

It is a 40V N-channel MOSFET with a low Rds(on) of 4.6 mΩ, making it suitable for a wide range of applications including power supplies, motor control, and battery management systems.

Key Specifications

Parameter Value Unit
Vds (Drain-Source Voltage) 40 V
Vgs (Gate-Source Voltage) ±20 V
Rds(on) (On-Resistance) 4.6
Id (Continuous Drain Current) 120 A
Pd (Power Dissipation) 150 W
Tj (Junction Temperature) -55 to 150 °C
Tstg (Storage Temperature) -55 to 150 °C

Key Features

  • Low On-Resistance (Rds(on)): 4.6 mΩ, ensuring high efficiency and minimal power loss.
  • High Current Capability: Continuous drain current of 120 A, suitable for demanding applications.
  • Advanced Trench Technology: Enhances performance and reduces thermal resistance.
  • Robust Construction: Designed to withstand high temperatures and harsh environments.
  • Compact Package: Available in a variety of packages, including TO-220 and D²PAK, to fit different design needs.

Applications

  • Power Supplies: DC-DC converters, SMPS, and other power supply applications.
  • Motor Control: Motor drives, servo motors, and other motor control systems.
  • Battery Management Systems: Charging and discharging circuits for batteries.
  • Automotive Systems: Fuel pumps, anti-lock braking systems (ABS), and other automotive applications.
  • Industrial Automation: Control systems, robotics, and other industrial automation applications.

Q & A

  1. What is the maximum drain-source voltage of the NVMFS5C460NLWFAFT1G MOSFET?

    The maximum drain-source voltage (Vds) is 40 V.

  2. What is the typical on-resistance (Rds(on)) of this MOSFET?

    The typical on-resistance (Rds(on)) is 4.6 mΩ.

  3. What is the continuous drain current (Id) rating of this device?

    The continuous drain current (Id) rating is 120 A.

  4. What are the operating and storage temperature ranges for this MOSFET?

    The operating temperature range is -55°C to 150°C, and the storage temperature range is also -55°C to 150°C.

  5. What are some common applications for the NVMFS5C460NLWFAFT1G MOSFET?

    Common applications include power supplies, motor control, battery management systems, automotive systems, and industrial automation.

  6. What is the significance of the advanced trench technology in this MOSFET?

    The advanced trench technology enhances the performance of the MOSFET by reducing thermal resistance and improving overall efficiency.

  7. What packages are available for the NVMFS5C460NLWFAFT1G MOSFET?

    The device is available in various packages such as TO-220 and D²PAK.

  8. How does the low on-resistance benefit the application?

    The low on-resistance reduces power loss and increases efficiency in the application.

  9. What is the power dissipation rating of this MOSFET?

    The power dissipation rating is 150 W.

  10. Is this MOSFET suitable for high-temperature environments?

    Yes, it is designed to operate in high-temperature environments up to 150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:21A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.6W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C460NLWFAFT1G NVMFS5C460NLWFAFT3G NVMFS5C468NLWFAFT1G NVMFS5C410NLWFAFT1G NVMFS5C430NLWFAFT1G NVMFS5C450NLWFAFT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Not For New Designs Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 78A (Tc) 21A (Ta), 78A (Tc) 37A (Tc) 50A (Ta), 330A (Tc) 38A (Ta), 200A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 35A, 10V 4.5mOhm @ 35A, 10V 10.3mOhm @ 20A, 10V 0.82mOhm @ 50A, 10V 1.4mOhm @ 50A, 10V 2.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 23 nC @ 10 V 7.3 nC @ 10 V 143 nC @ 10 V 70 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V 1300 pF @ 25 V 570 pF @ 25 V 8862 pF @ 25 V 4300 pF @ 20 V 2100 pF @ 20 V
FET Feature - - - - - -
Power Dissipation (Max) 3.6W (Ta), 50W (Tc) 3.6W (Ta), 50W (Tc) 28W (Tc) 3.8W (Ta), 167W (Tc) 3.8W (Ta), 110W (Tc) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount, Wettable Flank Surface Mount Surface Mount Surface Mount, Wettable Flank
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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