Overview
The NVMFS5C460NLWFT1G is a single N-channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and minimal conduction losses. It features a compact DFN5/DFNW5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 78 | A |
| On-Resistance (VGS = 4.5 V, ID = 35 A) | RDS(on) | 5.8 - 7.2 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Junction-to-Case Thermal Resistance | RJC | 3.0 | °C/W |
| Junction-to-Ambient Thermal Resistance | RJA | 42 | °C/W |
Key Features
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Wettable Flank Option for Enhanced Optical Inspection
- AEC-Q101 Qualified and PPAP Capable
- Pb-free and RoHS Compliant
Applications
The NVMFS5C460NLWFT1G is suitable for various high-power applications, including but not limited to:
- Automotive Systems: Due to its AEC-Q101 qualification, it is ideal for automotive power management and control systems.
- Industrial Power Supplies: Its low on-resistance and high current capability make it suitable for high-efficiency power supplies.
- Motor Control: It can be used in motor drive applications requiring high current and low losses.
- Power Management: It is applicable in various power management circuits where high efficiency and reliability are crucial.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C460NLWFT1G?
The maximum drain-to-source voltage (VDSS) is 40 V. - What is the continuous drain current rating at 25°C?
The continuous drain current (ID) is 78 A at 25°C. - What is the typical on-resistance of the MOSFET?
The typical on-resistance (RDS(on)) is 5.8 - 7.2 mΩ at VGS = 4.5 V and ID = 35 A. - Is the NVMFS5C460NLWFT1G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable. - What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RJC) is 3.0 °C/W. - Is the device Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant. - What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 1.2 - 2.0 V. - What are the package options available for this MOSFET?
The device is available in DFN5 and DFNW5 packages. - What is the typical forward diode voltage?
The typical forward diode voltage (VSD) is 0.86 - 1.2 V at IS = 35 A. - What is the reverse recovery time of the MOSFET?
The reverse recovery time (tRR) is 29 ns.
