NVMFS5C430NLWFT1G
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onsemi NVMFS5C430NLWFT1G

Manufacturer No:
NVMFS5C430NLWFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 200A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5C430NLWFT1G is an automotive power MOSFET produced by onsemi, designed for compact and efficient designs. This single N-Channel MOSFET features a 5x6mm flat lead package, making it ideal for applications where space is limited. It is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive environments. The device also offers a wettable flank option for enhanced optical inspection.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 40 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25°C) ID 200 A
Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) RDS(on) 1.4 mΩ
Junction-to-Case Thermal Resistance RJC 1.4 °C/W °C/W
Junction-to-Ambient Thermal Resistance RJA 40 °C/W °C/W
Gate Threshold Voltage VGS(TH) 1.2 - 2.0 V V
Total Gate Charge (VGS = 10 V, VDS = 20 V; ID = 50 A) QG(TOT) 70 nC nC

Key Features

  • Small Footprint (5x6 mm) for Compact Design
  • Low RDS(on) to Minimize Conduction Losses
  • Low QG and Capacitance to Minimize Driver Losses
  • Wettable Flank Option for Enhanced Optical Inspection (NVMFS5C430NLWF)
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-Free and RoHS Compliant

Applications

  • Reverse Battery Protection
  • Power Switches (High Side Driver, Low Side Driver, H-Bridges, etc.)
  • Switching Power Supplies
  • Solenoid Driver – ABS, Fuel Injection
  • Motor Control – EPS, Wipers, Fans, Seats, etc.
  • Load Switch – ECU, Chassis, Body

Q & A

  1. What is the maximum drain-to-source voltage of the NVMFS5C430NLWFT1G?

    The maximum drain-to-source voltage (VDSS) is 40 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) is 200 A at 25°C.

  3. What is the typical on-resistance of the MOSFET at VGS = 10 V and ID = 50 A?

    The typical on-resistance (RDS(on)) is 1.4 mΩ at VGS = 10 V and ID = 50 A.

  4. Is the NVMFS5C430NLWFT1G AEC-Q101 qualified?
  5. What is the junction-to-case thermal resistance of the MOSFET?

    The junction-to-case thermal resistance (RJC) is 1.4 °C/W.

  6. What are the typical applications of the NVMFS5C430NLWFT1G?

    Typical applications include reverse battery protection, power switches, switching power supplies, solenoid drivers, motor control, and load switches.

  7. Is the NVMFS5C430NLWFT1G Pb-Free and RoHS compliant?
  8. What is the gate threshold voltage range of the MOSFET?

    The gate threshold voltage (VGS(TH)) range is 1.2 to 2.0 V.

  9. What is the total gate charge at VGS = 10 V and VDS = 20 V; ID = 50 A?

    The total gate charge (QG(TOT)) is 70 nC at VGS = 10 V and VDS = 20 V; ID = 50 A.

  10. Does the NVMFS5C430NLWFT1G have a wettable flank option?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Part Number NVMFS5C430NLWFT1G NVMFS5C430NLWFT3G NVMFS5C430NWFT1G NVMFS5C450NLWFT1G NVMFS5C460NLWFT1G NVMFS5C410NLWFT1G NVMFS5C420NLWFT1G NVMFS5C430NLAFT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc) 200A (Tc) 185A (Tc) 110A (Tc) 78A (Tc) 48A (Ta), 315A (Tc) 45A (Ta), 277A (Tc) 38A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 50A, 10V 1.5mOhm @ 50A, 10V 1.7mOhm @ 50A, 10V 2.8mOhm @ 40A, 10V 4.5mOhm @ 35A, 10V 0.9mOhm @ 50A, 10V 1mOhm @ 50A, 10V 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 3.5V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2.2V @ 200µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 70 nC @ 10 V 47 nC @ 10 V 35 nC @ 10 V 23 nC @ 10 V 143 nC @ 10 V 100 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 20 V 4300 pF @ 20 V 3300 pF @ 25 V 2100 pF @ 20 V 1300 pF @ 25 V 8862 pF @ 25 V 7020 pF @ 20 V 4300 pF @ 20 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.8W (Ta), 110W (Tc) 3.8W (Ta), 110W (Tc) 3.8W (Ta), 106W (Tc) 3.7W (Ta), 68W (Tc) 3.6W (Ta), 50W (Tc) 3.8W (Ta), 167W (Tc) 3.8W (Ta), 146W (Tc) 3.8W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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