Overview
The NVMFS5C460NLAFT1G is a high-performance, single N-channel MOSFET produced by onsemi. This device is designed for applications requiring low on-resistance and high current handling capabilities. It features a compact DFN5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 78 | A |
| On-Resistance (VGS = 4.5 V, ID = 35 A) | RDS(on) | 5.8 - 7.2 | mΩ |
| On-Resistance (VGS = 10 V, ID = 35 A) | RDS(on) | 3.7 - 4.5 | mΩ |
| Junction-to-Case Thermal Resistance | RθJC | 3.0 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 42 | °C/W |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Total Gate Charge (VGS = 10 V, VDS = 20 V; ID = 35 A) | QG(TOT) | 23 | nC |
Key Features
- Small Footprint: The DFN5 package measures 5x6 mm, ideal for compact designs.
- Low On-Resistance: Minimizes conduction losses with RDS(on) as low as 3.7 mΩ at VGS = 10 V.
- Low QG and Capacitance: Reduces driver losses with low total gate charge and capacitance.
- Wettable Flank Option: Available with wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Power Management: Ideal for power management in DC-DC converters, motor control, and power supplies.
- Industrial Control: Used in industrial control systems, robotics, and other high-current applications.
- Consumer Electronics: Applicable in high-power consumer electronics such as gaming consoles and high-end computing systems.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C460NLAFT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current rating at TC = 25°C?
The continuous drain current (ID) is 78 A at TC = 25°C.
- What are the typical on-resistance values for this MOSFET?
The on-resistance (RDS(on)) is typically 3.7 - 4.5 mΩ at VGS = 10 V and 5.8 - 7.2 mΩ at VGS = 4.5 V.
- Is the NVMFS5C460NLAFT1G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the junction-to-case thermal resistance of this MOSFET?
The junction-to-case thermal resistance (RθJC) is 3.0 °C/W.
- What is the total gate charge at VGS = 10 V and VDS = 20 V?
The total gate charge (QG(TOT)) is 23 nC at VGS = 10 V and VDS = 20 V.
- Is the NVMFS5C460NLAFT1G Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant.
- What are the typical applications for this MOSFET?
It is suitable for automotive systems, power management, industrial control, and high-power consumer electronics.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 1.2 - 2.0 V.
- What is the forward diode voltage at IS = 35 A and TJ = 25°C?
The forward diode voltage (VSD) is 0.86 - 1.2 V at IS = 35 A and TJ = 25°C.
