Overview
The NVMFS5C410NLAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. The MOSFET features a compact DFN5 (SO-8FL) package, which is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and reliability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 330 | A |
| Continuous Drain Current (TC = 100°C) | ID | 230 | A |
| Power Dissipation (TC = 25°C) | PD | 167 | W |
| Power Dissipation (TC = 100°C) | PD | 83 | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 900 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 0.65 - 0.82 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Total Gate Charge (VGS = 4.5 V, VDS = 20 V; ID = 50 A) | QG(TOT) | 66 | nC |
Key Features
- Compact Design: The NVMFS5C410NLAFT1G comes in a small footprint DFN5 (SO-8FL) package, ideal for space-constrained applications.
- Low On-Resistance: With an RDS(on) of 0.65 - 0.82 mΩ at VGS = 10 V and ID = 50 A, this MOSFET minimizes conduction losses.
- Low QG and Capacitance: Low total gate charge and capacitance reduce driver losses, enhancing overall efficiency.
- Wettable Flank Option: The NVMFS5C410NLWF version offers wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: This device meets automotive standards for reliability and quality.
- Environmental Compliance: Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and robust performance.
- Power Management: Ideal for power management in industrial, consumer, and computing systems.
- Switching Applications: Used in high-frequency switching circuits, such as DC-DC converters and motor control systems.
- Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C410NLAFT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 330 A at 25°C and 230 A at 100°C.
- What is the typical on-resistance of the MOSFET?
The typical on-resistance (RDS(on)) is 0.65 - 0.82 mΩ at VGS = 10 V and ID = 50 A.
- Is the NVMFS5C410NLAFT1G environmentally compliant?
Yes, it is Pb-free, halogen-free, and RoHS compliant.
- What are the operating junction and storage temperature ranges?
The operating junction and storage temperature ranges are −55 to +175 °C.
- What is the total gate charge at VGS = 4.5 V and VDS = 20 V?
The total gate charge (QG(TOT)) is 66 nC.
- Is the NVMFS5C410NLAFT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What package options are available for this MOSFET?
The MOSFET is available in DFN5 (SO-8FL) and DFNW5 (SO-8FL WF) packages.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 900 A at TA = 25°C and tp = 10 μs.
- What are the key benefits of the low QG and capacitance?
The low total gate charge and capacitance reduce driver losses, enhancing overall efficiency and performance.
