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NVMFS5C410NAFT1G
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onsemi NVMFS5C410NAFT1G

Manufacturer No:
NVMFS5C410NAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 46A/300A 5DFN
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The NVMFS5C410NAFT1G is an automotive-grade N-Channel Power MOSFET produced by onsemi. This MOSFET is designed for compact and efficient designs, featuring a small footprint of 5x6 mm in a flat lead package. It is AEC-Q101 Qualified and PPAP capable, making it suitable for various automotive applications. The device offers high thermal performance and is RoHS compliant, ensuring environmental sustainability and reliability in harsh automotive environments.

Key Specifications

ParameterValue
VDS (Max)40 V
ID (Max) at Ta46 A
ID (Max) at Tc300 A
RDS(on) Max at VGS = 10 V0.92 mΩ
VGS(th) Max3.5 V
PD Max at Ta3.9 W
PD Max at Tc166 W
Package TypeDFN-5 (5x6 mm)
Channel PolarityN-Channel

Key Features

  • Small footprint (5x6 mm) for compact designs
  • Low RDS(on) of 0.92 mΩ at VGS = 10 V
  • Low Qg and Ciss for efficient switching
  • AEC-Q101 Qualified and PPAP capable for automotive reliability
  • RoHS compliant for environmental sustainability
  • Wettable Flank Option available for enhanced optical inspection
  • High thermal performance

Applications

  • Reverse Battery Protection
  • Power Switches (High Side Driver, Low Side Driver, H-Bridges)
  • Switching Power Supplies
  • Solenoid Drivers – ABS, Fuel Injection
  • Motor Control – EPS, Wipers, Fans, Seats, etc.
  • Load Switch – ECU, Chassis, Body

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NVMFS5C410NAFT1G?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the maximum drain current (ID) at ambient temperature (Ta)?
    The maximum drain current (ID) at ambient temperature (Ta) is 46 A.
  3. What is the on-resistance (RDS(on)) at VGS = 10 V?
    The on-resistance (RDS(on)) at VGS = 10 V is 0.92 mΩ.
  4. Is the NVMFS5C410NAFT1G RoHS compliant?
    Yes, the NVMFS5C410NAFT1G is RoHS compliant.
  5. What are the typical applications of the NVMFS5C410NAFT1G?
    The typical applications include reverse battery protection, power switches, switching power supplies, solenoid drivers, motor control, and load switches.
  6. What is the package type of the NVMFS5C410NAFT1G?
    The package type is DFN-5 (5x6 mm).
  7. Is the NVMFS5C410NAFT1G AEC-Q101 Qualified?
    Yes, the NVMFS5C410NAFT1G is AEC-Q101 Qualified and PPAP capable.
  8. What is the thermal performance of the NVMFS5C410NAFT1G?
    The device offers high thermal performance.
  9. Does the NVMFS5C410NAFT1G have a Wettable Flank Option?
    Yes, the Wettable Flank Option is available for enhanced optical inspection.
  10. What is the maximum power dissipation (PD) at case temperature (Tc)?
    The maximum power dissipation (PD) at case temperature (Tc) is 166 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:46A (Ta), 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.92mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.9W (Ta), 166W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C410NAFT1G NVMFS5C410NLAFT1G NVMFS5C450NAFT1G NVMFS5C430NAFT1G NVMFS5C410NAFT3G NVMFS5C410NWFT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Not For New Designs Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 46A (Ta), 300A (Tc) 50A (Ta), 330A (Tc) 24A (Ta), 102A (Tc) 35A (Ta), 185A (Tc) 46A (Ta), 300A (Tc) 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 0.92mOhm @ 50A, 10V 0.82mOhm @ 50A, 10V 3.3mOhm @ 50A, 10V 1.7mOhm @ 50A, 10V 0.92mOhm @ 50A, 10V 0.92mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 2V @ 250µA 3.5V @ 65µA 3.5V @ 250µA 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V 143 nC @ 10 V 23 nC @ 10 V 47 nC @ 10 V 86 nC @ 10 V 86 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 25 V 8862 pF @ 25 V 1600 pF @ 25 V 3300 pF @ 25 V 6100 pF @ 25 V 6100 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 3.9W (Ta), 166W (Tc) 3.8W (Ta), 167W (Tc) 3.6W (Ta), 68W (Tc) 3.8W (Ta), 106W (Tc) 3.9W (Ta), 166W (Tc) 3.9W (Ta), 166W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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