English
NVMFS5C410NAFT1G
  • Share:

onsemi NVMFS5C410NAFT1G

Manufacturer No:
NVMFS5C410NAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 46A/300A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS5C410NAFT1G is an automotive-grade N-Channel Power MOSFET produced by onsemi. This MOSFET is designed for compact and efficient designs, featuring a small footprint of 5x6 mm in a flat lead package. It is AEC-Q101 Qualified and PPAP capable, making it suitable for various automotive applications. The device offers high thermal performance and is RoHS compliant, ensuring environmental sustainability and reliability in harsh automotive environments.

Key Specifications

ParameterValue
VDS (Max)40 V
ID (Max) at Ta46 A
ID (Max) at Tc300 A
RDS(on) Max at VGS = 10 V0.92 mΩ
VGS(th) Max3.5 V
PD Max at Ta3.9 W
PD Max at Tc166 W
Package TypeDFN-5 (5x6 mm)
Channel PolarityN-Channel

Key Features

  • Small footprint (5x6 mm) for compact designs
  • Low RDS(on) of 0.92 mΩ at VGS = 10 V
  • Low Qg and Ciss for efficient switching
  • AEC-Q101 Qualified and PPAP capable for automotive reliability
  • RoHS compliant for environmental sustainability
  • Wettable Flank Option available for enhanced optical inspection
  • High thermal performance

Applications

  • Reverse Battery Protection
  • Power Switches (High Side Driver, Low Side Driver, H-Bridges)
  • Switching Power Supplies
  • Solenoid Drivers – ABS, Fuel Injection
  • Motor Control – EPS, Wipers, Fans, Seats, etc.
  • Load Switch – ECU, Chassis, Body

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NVMFS5C410NAFT1G?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the maximum drain current (ID) at ambient temperature (Ta)?
    The maximum drain current (ID) at ambient temperature (Ta) is 46 A.
  3. What is the on-resistance (RDS(on)) at VGS = 10 V?
    The on-resistance (RDS(on)) at VGS = 10 V is 0.92 mΩ.
  4. Is the NVMFS5C410NAFT1G RoHS compliant?
    Yes, the NVMFS5C410NAFT1G is RoHS compliant.
  5. What are the typical applications of the NVMFS5C410NAFT1G?
    The typical applications include reverse battery protection, power switches, switching power supplies, solenoid drivers, motor control, and load switches.
  6. What is the package type of the NVMFS5C410NAFT1G?
    The package type is DFN-5 (5x6 mm).
  7. Is the NVMFS5C410NAFT1G AEC-Q101 Qualified?
    Yes, the NVMFS5C410NAFT1G is AEC-Q101 Qualified and PPAP capable.
  8. What is the thermal performance of the NVMFS5C410NAFT1G?
    The device offers high thermal performance.
  9. Does the NVMFS5C410NAFT1G have a Wettable Flank Option?
    Yes, the Wettable Flank Option is available for enhanced optical inspection.
  10. What is the maximum power dissipation (PD) at case temperature (Tc)?
    The maximum power dissipation (PD) at case temperature (Tc) is 166 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:46A (Ta), 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.92mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.9W (Ta), 166W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$2.44
174

Please send RFQ , we will respond immediately.

Same Series
NVMFS5C410NAFT3G
NVMFS5C410NAFT3G
MOSFET N-CH 40V 46A/300A 5DFN
NVMFS5C410NWFAFT3G
NVMFS5C410NWFAFT3G
MOSFET N-CH 40V 46A/300A 5DFN
NVMFS5C410NWFAFT1G
NVMFS5C410NWFAFT1G
MOSFET N-CH 40V 46A/300A 5DFN
NVMFS5C410NT1G
NVMFS5C410NT1G
MOSFET N-CH 40V 5DFN
NVMFS5C410NT3G
NVMFS5C410NT3G
MOSFET N-CH 40V 5DFN
NVMFS5C410NWFT1G
NVMFS5C410NWFT1G
MOSFET N-CH 40V 5DFN
NVMFS5C410NWFT3G
NVMFS5C410NWFT3G
MOSFET N-CH 40V 5DFN

Similar Products

Part Number NVMFS5C410NAFT1G NVMFS5C410NLAFT1G NVMFS5C450NAFT1G NVMFS5C430NAFT1G NVMFS5C410NAFT3G NVMFS5C410NWFT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Not For New Designs Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 46A (Ta), 300A (Tc) 50A (Ta), 330A (Tc) 24A (Ta), 102A (Tc) 35A (Ta), 185A (Tc) 46A (Ta), 300A (Tc) 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 0.92mOhm @ 50A, 10V 0.82mOhm @ 50A, 10V 3.3mOhm @ 50A, 10V 1.7mOhm @ 50A, 10V 0.92mOhm @ 50A, 10V 0.92mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 2V @ 250µA 3.5V @ 65µA 3.5V @ 250µA 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V 143 nC @ 10 V 23 nC @ 10 V 47 nC @ 10 V 86 nC @ 10 V 86 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 25 V 8862 pF @ 25 V 1600 pF @ 25 V 3300 pF @ 25 V 6100 pF @ 25 V 6100 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 3.9W (Ta), 166W (Tc) 3.8W (Ta), 167W (Tc) 3.6W (Ta), 68W (Tc) 3.8W (Ta), 106W (Tc) 3.9W (Ta), 166W (Tc) 3.9W (Ta), 166W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT