NVMFS5C410NAFT1G
  • Share:

onsemi NVMFS5C410NAFT1G

Manufacturer No:
NVMFS5C410NAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 46A/300A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS5C410NAFT1G is an automotive-grade N-Channel Power MOSFET produced by onsemi. This MOSFET is designed for compact and efficient designs, featuring a small footprint of 5x6 mm in a flat lead package. It is AEC-Q101 Qualified and PPAP capable, making it suitable for various automotive applications. The device offers high thermal performance and is RoHS compliant, ensuring environmental sustainability and reliability in harsh automotive environments.

Key Specifications

ParameterValue
VDS (Max)40 V
ID (Max) at Ta46 A
ID (Max) at Tc300 A
RDS(on) Max at VGS = 10 V0.92 mΩ
VGS(th) Max3.5 V
PD Max at Ta3.9 W
PD Max at Tc166 W
Package TypeDFN-5 (5x6 mm)
Channel PolarityN-Channel

Key Features

  • Small footprint (5x6 mm) for compact designs
  • Low RDS(on) of 0.92 mΩ at VGS = 10 V
  • Low Qg and Ciss for efficient switching
  • AEC-Q101 Qualified and PPAP capable for automotive reliability
  • RoHS compliant for environmental sustainability
  • Wettable Flank Option available for enhanced optical inspection
  • High thermal performance

Applications

  • Reverse Battery Protection
  • Power Switches (High Side Driver, Low Side Driver, H-Bridges)
  • Switching Power Supplies
  • Solenoid Drivers – ABS, Fuel Injection
  • Motor Control – EPS, Wipers, Fans, Seats, etc.
  • Load Switch – ECU, Chassis, Body

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NVMFS5C410NAFT1G?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the maximum drain current (ID) at ambient temperature (Ta)?
    The maximum drain current (ID) at ambient temperature (Ta) is 46 A.
  3. What is the on-resistance (RDS(on)) at VGS = 10 V?
    The on-resistance (RDS(on)) at VGS = 10 V is 0.92 mΩ.
  4. Is the NVMFS5C410NAFT1G RoHS compliant?
    Yes, the NVMFS5C410NAFT1G is RoHS compliant.
  5. What are the typical applications of the NVMFS5C410NAFT1G?
    The typical applications include reverse battery protection, power switches, switching power supplies, solenoid drivers, motor control, and load switches.
  6. What is the package type of the NVMFS5C410NAFT1G?
    The package type is DFN-5 (5x6 mm).
  7. Is the NVMFS5C410NAFT1G AEC-Q101 Qualified?
    Yes, the NVMFS5C410NAFT1G is AEC-Q101 Qualified and PPAP capable.
  8. What is the thermal performance of the NVMFS5C410NAFT1G?
    The device offers high thermal performance.
  9. Does the NVMFS5C410NAFT1G have a Wettable Flank Option?
    Yes, the Wettable Flank Option is available for enhanced optical inspection.
  10. What is the maximum power dissipation (PD) at case temperature (Tc)?
    The maximum power dissipation (PD) at case temperature (Tc) is 166 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:46A (Ta), 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.92mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.9W (Ta), 166W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$2.44
174

Please send RFQ , we will respond immediately.

Same Series
NVMFS5C410NAFT3G
NVMFS5C410NAFT3G
MOSFET N-CH 40V 46A/300A 5DFN
NVMFS5C410NWFAFT3G
NVMFS5C410NWFAFT3G
MOSFET N-CH 40V 46A/300A 5DFN
NVMFS5C410NWFAFT1G
NVMFS5C410NWFAFT1G
MOSFET N-CH 40V 46A/300A 5DFN
NVMFS5C410NT1G
NVMFS5C410NT1G
MOSFET N-CH 40V 5DFN
NVMFS5C410NT3G
NVMFS5C410NT3G
MOSFET N-CH 40V 5DFN
NVMFS5C410NWFT1G
NVMFS5C410NWFT1G
MOSFET N-CH 40V 5DFN
NVMFS5C410NWFT3G
NVMFS5C410NWFT3G
MOSFET N-CH 40V 5DFN

Similar Products

Part Number NVMFS5C410NAFT1G NVMFS5C410NLAFT1G NVMFS5C450NAFT1G NVMFS5C430NAFT1G NVMFS5C410NAFT3G NVMFS5C410NWFT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Not For New Designs Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 46A (Ta), 300A (Tc) 50A (Ta), 330A (Tc) 24A (Ta), 102A (Tc) 35A (Ta), 185A (Tc) 46A (Ta), 300A (Tc) 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 0.92mOhm @ 50A, 10V 0.82mOhm @ 50A, 10V 3.3mOhm @ 50A, 10V 1.7mOhm @ 50A, 10V 0.92mOhm @ 50A, 10V 0.92mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 2V @ 250µA 3.5V @ 65µA 3.5V @ 250µA 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V 143 nC @ 10 V 23 nC @ 10 V 47 nC @ 10 V 86 nC @ 10 V 86 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 25 V 8862 pF @ 25 V 1600 pF @ 25 V 3300 pF @ 25 V 6100 pF @ 25 V 6100 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 3.9W (Ta), 166W (Tc) 3.8W (Ta), 167W (Tc) 3.6W (Ta), 68W (Tc) 3.8W (Ta), 106W (Tc) 3.9W (Ta), 166W (Tc) 3.9W (Ta), 166W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC