onsemi NVMFS5C410NAFT1G

Manufacturer No:: NVMFS5C410NAFT1G
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 40V 46A/300A 5DFN
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Product Introduction

Overview

The NVMFS5C410NAFT1G is an automotive-grade N-Channel Power MOSFET produced by onsemi. This MOSFET is designed for compact and efficient designs, featuring a small footprint of 5x6 mm in a flat lead package. It is AEC-Q101 Qualified and PPAP capable, making it suitable for various automotive applications. The device offers high thermal performance and is RoHS compliant, ensuring environmental sustainability and reliability in harsh automotive environments.

Key Specifications

Parameter	Value
V_DS (Max)	40 V
I_D (Max) at T_a	46 A
I_D (Max) at T_c	300 A
R_DS(on) Max at V_GS = 10 V	0.92 mΩ
V_GS(th) Max	3.5 V
P_D Max at T_a	3.9 W
P_D Max at T_c	166 W
Package Type	DFN-5 (5x6 mm)
Channel Polarity	N-Channel

Key Features

Small footprint (5x6 mm) for compact designs
Low R_DS(on) of 0.92 mΩ at V_GS = 10 V
Low Q_g and C_iss for efficient switching
AEC-Q101 Qualified and PPAP capable for automotive reliability
RoHS compliant for environmental sustainability
Wettable Flank Option available for enhanced optical inspection
High thermal performance

Applications

Reverse Battery Protection
Power Switches (High Side Driver, Low Side Driver, H-Bridges)
Switching Power Supplies
Solenoid Drivers – ABS, Fuel Injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body

Q & A

What is the maximum drain-source voltage (V_DS) of the NVMFS5C410NAFT1G?
The maximum drain-source voltage (V_DS) is 40 V.
What is the maximum drain current (I_D) at ambient temperature (T_a)?
The maximum drain current (I_D) at ambient temperature (T_a) is 46 A.
What is the on-resistance (R_DS(on)) at V_GS = 10 V?
The on-resistance (R_DS(on)) at V_GS = 10 V is 0.92 mΩ.
Is the NVMFS5C410NAFT1G RoHS compliant?
Yes, the NVMFS5C410NAFT1G is RoHS compliant.
What are the typical applications of the NVMFS5C410NAFT1G?
The typical applications include reverse battery protection, power switches, switching power supplies, solenoid drivers, motor control, and load switches.
What is the package type of the NVMFS5C410NAFT1G?
The package type is DFN-5 (5x6 mm).
Is the NVMFS5C410NAFT1G AEC-Q101 Qualified?
Yes, the NVMFS5C410NAFT1G is AEC-Q101 Qualified and PPAP capable.
What is the thermal performance of the NVMFS5C410NAFT1G?
The device offers high thermal performance.
Does the NVMFS5C410NAFT1G have a Wettable Flank Option?
Yes, the Wettable Flank Option is available for enhanced optical inspection.
What is the maximum power dissipation (P_D) at case temperature (T_c)?
The maximum power dissipation (P_D) at case temperature (T_c) is 166 W.

In Stock

UnitPrice: $2.44

Quantity: 174

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Same Series

Part Number	NVMFS5C410NAFT1G	NVMFS5C410NLAFT1G	NVMFS5C450NAFT1G	NVMFS5C430NAFT1G	NVMFS5C410NAFT3G	NVMFS5C410NWFT1G
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Active	Active	Not For New Designs	Discontinued at Digi-Key
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	40 V	40 V	40 V	40 V	40 V
Current - Continuous Drain (Id) @ 25°C	46A (Ta), 300A (Tc)	50A (Ta), 330A (Tc)	24A (Ta), 102A (Tc)	35A (Ta), 185A (Tc)	46A (Ta), 300A (Tc)	300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	4.5V, 10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	0.92mOhm @ 50A, 10V	0.82mOhm @ 50A, 10V	3.3mOhm @ 50A, 10V	1.7mOhm @ 50A, 10V	0.92mOhm @ 50A, 10V	0.92mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA	2V @ 250µA	3.5V @ 65µA	3.5V @ 250µA	3.5V @ 250µA	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V	143 nC @ 10 V	23 nC @ 10 V	47 nC @ 10 V	86 nC @ 10 V	86 nC @ 10 V
Vgs (Max)	±20V	±20V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	6100 pF @ 25 V	8862 pF @ 25 V	1600 pF @ 25 V	3300 pF @ 25 V	6100 pF @ 25 V	6100 pF @ 25 V
FET Feature	-	-	-	-	-	-
Power Dissipation (Max)	3.9W (Ta), 166W (Tc)	3.8W (Ta), 167W (Tc)	3.6W (Ta), 68W (Tc)	3.8W (Ta), 106W (Tc)	3.9W (Ta), 166W (Tc)	3.9W (Ta), 166W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	46A (Ta), 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	0.92mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	86 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6100 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	3.9W (Ta), 166W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN, 5 Leads

onsemi NVMFS5C410NAFT1G

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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