English
NVMFS5C410NAFT1G
  • Share:

onsemi NVMFS5C410NAFT1G

Manufacturer No:
NVMFS5C410NAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 46A/300A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS5C410NAFT1G is an automotive-grade N-Channel Power MOSFET produced by onsemi. This MOSFET is designed for compact and efficient designs, featuring a small footprint of 5x6 mm in a flat lead package. It is AEC-Q101 Qualified and PPAP capable, making it suitable for various automotive applications. The device offers high thermal performance and is RoHS compliant, ensuring environmental sustainability and reliability in harsh automotive environments.

Key Specifications

ParameterValue
VDS (Max)40 V
ID (Max) at Ta46 A
ID (Max) at Tc300 A
RDS(on) Max at VGS = 10 V0.92 mΩ
VGS(th) Max3.5 V
PD Max at Ta3.9 W
PD Max at Tc166 W
Package TypeDFN-5 (5x6 mm)
Channel PolarityN-Channel

Key Features

  • Small footprint (5x6 mm) for compact designs
  • Low RDS(on) of 0.92 mΩ at VGS = 10 V
  • Low Qg and Ciss for efficient switching
  • AEC-Q101 Qualified and PPAP capable for automotive reliability
  • RoHS compliant for environmental sustainability
  • Wettable Flank Option available for enhanced optical inspection
  • High thermal performance

Applications

  • Reverse Battery Protection
  • Power Switches (High Side Driver, Low Side Driver, H-Bridges)
  • Switching Power Supplies
  • Solenoid Drivers – ABS, Fuel Injection
  • Motor Control – EPS, Wipers, Fans, Seats, etc.
  • Load Switch – ECU, Chassis, Body

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NVMFS5C410NAFT1G?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the maximum drain current (ID) at ambient temperature (Ta)?
    The maximum drain current (ID) at ambient temperature (Ta) is 46 A.
  3. What is the on-resistance (RDS(on)) at VGS = 10 V?
    The on-resistance (RDS(on)) at VGS = 10 V is 0.92 mΩ.
  4. Is the NVMFS5C410NAFT1G RoHS compliant?
    Yes, the NVMFS5C410NAFT1G is RoHS compliant.
  5. What are the typical applications of the NVMFS5C410NAFT1G?
    The typical applications include reverse battery protection, power switches, switching power supplies, solenoid drivers, motor control, and load switches.
  6. What is the package type of the NVMFS5C410NAFT1G?
    The package type is DFN-5 (5x6 mm).
  7. Is the NVMFS5C410NAFT1G AEC-Q101 Qualified?
    Yes, the NVMFS5C410NAFT1G is AEC-Q101 Qualified and PPAP capable.
  8. What is the thermal performance of the NVMFS5C410NAFT1G?
    The device offers high thermal performance.
  9. Does the NVMFS5C410NAFT1G have a Wettable Flank Option?
    Yes, the Wettable Flank Option is available for enhanced optical inspection.
  10. What is the maximum power dissipation (PD) at case temperature (Tc)?
    The maximum power dissipation (PD) at case temperature (Tc) is 166 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:46A (Ta), 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.92mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.9W (Ta), 166W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$2.44
174

Please send RFQ , we will respond immediately.

Same Series
NVMFS5C410NAFT3G
NVMFS5C410NAFT3G
MOSFET N-CH 40V 46A/300A 5DFN
NVMFS5C410NWFAFT3G
NVMFS5C410NWFAFT3G
MOSFET N-CH 40V 46A/300A 5DFN
NVMFS5C410NWFAFT1G
NVMFS5C410NWFAFT1G
MOSFET N-CH 40V 46A/300A 5DFN
NVMFS5C410NT1G
NVMFS5C410NT1G
MOSFET N-CH 40V 5DFN
NVMFS5C410NT3G
NVMFS5C410NT3G
MOSFET N-CH 40V 5DFN
NVMFS5C410NWFT1G
NVMFS5C410NWFT1G
MOSFET N-CH 40V 5DFN
NVMFS5C410NWFT3G
NVMFS5C410NWFT3G
MOSFET N-CH 40V 5DFN

Similar Products

Part Number NVMFS5C410NAFT1G NVMFS5C410NLAFT1G NVMFS5C450NAFT1G NVMFS5C430NAFT1G NVMFS5C410NAFT3G NVMFS5C410NWFT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Not For New Designs Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 46A (Ta), 300A (Tc) 50A (Ta), 330A (Tc) 24A (Ta), 102A (Tc) 35A (Ta), 185A (Tc) 46A (Ta), 300A (Tc) 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 0.92mOhm @ 50A, 10V 0.82mOhm @ 50A, 10V 3.3mOhm @ 50A, 10V 1.7mOhm @ 50A, 10V 0.92mOhm @ 50A, 10V 0.92mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 2V @ 250µA 3.5V @ 65µA 3.5V @ 250µA 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V 143 nC @ 10 V 23 nC @ 10 V 47 nC @ 10 V 86 nC @ 10 V 86 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 25 V 8862 pF @ 25 V 1600 pF @ 25 V 3300 pF @ 25 V 6100 pF @ 25 V 6100 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 3.9W (Ta), 166W (Tc) 3.8W (Ta), 167W (Tc) 3.6W (Ta), 68W (Tc) 3.8W (Ta), 106W (Tc) 3.9W (Ta), 166W (Tc) 3.9W (Ta), 166W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK