Overview
The NVMFS5C430NAFT1G is a single N-channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a small footprint in a 5x6 mm DFN5 package, making it ideal for compact designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments. It is also Pb-free and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 185 | A |
| On-Resistance (RDS(on)) at VGS = 10 V, ID = 50 A | RDS(on) | 1.7 | mΩ |
| Junction-to-Case Thermal Resistance | RθJC | 1.4 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 40 | °C/W |
| Gate Threshold Voltage | VGS(TH) | 2.5 - 3.5 | V |
| Input Capacitance | CISS | 3300 | pF |
| Total Gate Charge | QG(TOT) | 47 | nC |
Key Features
- Small Footprint: Compact 5x6 mm DFN5 package for space-efficient designs.
- Low RDS(on): Minimizes conduction losses with an on-resistance of 1.7 mΩ at VGS = 10 V, ID = 50 A.
- Low QG and Capacitance: Reduces driver losses with a total gate charge of 47 nC.
- Wettable Flank Option: NVMFS5C430NWF variant offers enhanced optical inspection capabilities.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and other stringent applications.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
The NVMFS5C430NAFT1G is suitable for a variety of high-performance applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Power supplies: Its low on-resistance and high current handling make it suitable for high-efficiency power supply designs.
- Motor control: Used in motor drive applications requiring high current and low losses.
- Industrial control: Suitable for industrial automation and control systems where reliability and efficiency are critical.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C430NAFT1G?
The maximum drain-to-source voltage (VDSS) is 40 V. - What is the typical on-resistance (RDS(on)) of this MOSFET?
The typical on-resistance (RDS(on)) is 1.7 mΩ at VGS = 10 V, ID = 50 A. - Is the NVMFS5C430NAFT1G Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant. - What is the junction-to-case thermal resistance of this device?
The junction-to-case thermal resistance (RθJC) is 1.4 °C/W. - What are the package options available for this MOSFET?
The device is available in DFN5 (5x6 mm) and DFNW5 (with wettable flanks) packages. - What is the gate threshold voltage range of the NVMFS5C430NAFT1G?
The gate threshold voltage (VGS(TH)) range is 2.5 to 3.5 V. - Is this MOSFET suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. - What is the maximum continuous drain current at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 185 A. - What is the total gate charge of this MOSFET?
The total gate charge (QG(TOT)) is 47 nC. - How does the wettable flank option benefit the device?
The wettable flank option (NVMFS5C430NWF) enhances optical inspection capabilities.
