MMBT589LT1G
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onsemi MMBT589LT1G

Manufacturer No:
MMBT589LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The onsemi MMBT589LT1G is a high-current surface mount PNP silicon switching transistor. This device is designed for load management in various applications, particularly in portable and compact electronic systems. It is part of onsemi's portfolio of Pb-free, halogen-free, and RoHS-compliant components, ensuring environmental compliance and reliability. The transistor is packaged in a SOT-23 (TO-236) case, making it suitable for space-constrained designs.

Key Specifications

Parameter Value Unit
Transistor Type PNP
Maximum Collector-Emitter Voltage -30 Vdc
Maximum Emitter-Base Voltage -5 Vdc
Maximum Collector Current - Continuous 1.0 A
Maximum Collector Current - Peak 2.0 A
Minimum DC Current Gain 100
Maximum Power Dissipation 710 mW
Junction and Storage Temperature Range -55 to +150 °C
Package Type SOT-23
Mounting Type Surface Mount
Dimensions 3.04 x 1.4 x 1.01 mm

Key Features

  • Pb-free, halogen-free, and RoHS-compliant, ensuring environmental compliance.
  • High current handling capability with a maximum collector current of 1.0 A and peak current of 2.0 A.
  • Low saturation voltage, enhancing efficiency in switching applications.
  • Compact SOT-23 package suitable for space-constrained designs.
  • Wide operating temperature range from -55°C to +150°C.
  • High DC current gain with a minimum of 100, ensuring reliable switching performance.

Applications

  • Load management in portable electronic devices such as smartphones, tablets, and laptops.
  • Switching circuits in automotive systems.
  • Power management in industrial control systems.
  • General-purpose switching applications where high current and low voltage drop are required.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT589LT1G?

    The maximum collector-emitter voltage is -30 Vdc.

  2. What is the package type of the MMBT589LT1G?

    The package type is SOT-23 (TO-236).

  3. What is the maximum collector current of the MMBT589LT1G?

    The maximum continuous collector current is 1.0 A, and the peak collector current is 2.0 A.

  4. Is the MMBT589LT1G RoHS-compliant?
  5. What is the minimum DC current gain of the MMBT589LT1G?

    The minimum DC current gain is 100.

  6. What is the operating temperature range of the MMBT589LT1G?

    The junction and storage temperature range is from -55°C to +150°C.

  7. What are the dimensions of the MMBT589LT1G package?

    The dimensions are 3.04 x 1.4 x 1.01 mm.

  8. What are typical applications for the MMBT589LT1G?

    Typical applications include load management in portable electronics, automotive systems, and general-purpose switching circuits.

  9. What is the maximum power dissipation of the MMBT589LT1G?

    The maximum power dissipation is 710 mW.

  10. Is the MMBT589LT1G suitable for high-current switching applications?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 2V
Power - Max:310 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Same Series
NSVMMBT589LT1G
NSVMMBT589LT1G
TRANS PNP 30V 1A SOT23-3

Similar Products

Part Number MMBT589LT1G MMBT489LT1G MMBT5089LT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type PNP NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 50 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 25 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 200mA, 2A 200mV @ 100mA, 1A 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA 100nA 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V 300 @ 500mA, 5V 400 @ 100µA, 5V
Power - Max 310 mW 710 mW 300 mW
Frequency - Transition 100MHz 100MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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