MMBT489LT1G
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onsemi MMBT489LT1G

Manufacturer No:
MMBT489LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT489LT1G is a high-current surface mount NPN silicon switching transistor designed for load management in portable applications. Produced by onsemi, this transistor is part of the SOT-23 (TO-236) package family and is known for its robust performance and compliance with environmental standards. It is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic devices.

Key Specifications

Parameter Symbol Max Unit
Collector-Emitter Voltage VCEO 30 Vdc
Collector-Base Voltage VCBO 50 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current - Continuous IC 1.0 A
Collector Current - Peak ICM 2.0 A
Total Device Dissipation (Single Pulse < 10 s) PDsingle 575 mW
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Transition Frequency fT 100 MHz
Collector Capacitance Cc 15 pF
Forward Current Transfer Ratio (hFE), MIN hFE 300

Key Features

  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • High collector current capability of up to 1 A and peak current of 2 A.
  • High collector-emitter voltage of 30 V and collector-base voltage of 50 V.
  • Transition frequency of 100 MHz, suitable for high-frequency applications.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
  • Compact SOT-23 (TO-236) package, ideal for space-constrained designs.

Applications

  • Load management in portable electronic devices such as smartphones, tablets, and laptops.
  • Switching applications in power management circuits.
  • General-purpose amplification in audio and signal processing circuits.
  • Automotive and industrial control systems requiring high reliability and robust performance.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT489LT1G transistor?

    The maximum collector-emitter voltage (VCEO) is 30 Vdc.

  2. What is the peak collector current rating of the MMBT489LT1G?

    The peak collector current (ICM) is 2.0 A.

  3. Is the MMBT489LT1G RoHS compliant?

    Yes, the MMBT489LT1G is Pb-free, halogen-free, and RoHS compliant.

  4. What is the transition frequency of the MMBT489LT1G transistor?

    The transition frequency (fT) is 100 MHz.

  5. What is the maximum junction temperature of the MMBT489LT1G?

    The maximum junction temperature (TJ) is 150 °C.

  6. What package type does the MMBT489LT1G come in?

    The MMBT489LT1G comes in the SOT-23 (TO-236) package.

  7. What are some typical applications of the MMBT489LT1G transistor?

    Typical applications include load management in portable electronics, switching in power management circuits, and general-purpose amplification.

  8. What is the collector capacitance of the MMBT489LT1G?

    The collector capacitance (Cc) is 15 pF.

  9. What is the minimum forward current transfer ratio (hFE) of the MMBT489LT1G?

    The minimum forward current transfer ratio (hFE) is 300.

  10. What is the total device dissipation for a single pulse less than 10 seconds?

    The total device dissipation for a single pulse less than 10 seconds (PDsingle) is 575 mW.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:200mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 500mA, 5V
Power - Max:710 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBT489LT1G MMBT589LT1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 100mA, 1A 650mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 5V 100 @ 500mA, 2V
Power - Max 710 mW 310 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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