Overview
The NSVMMBT589LT1G is a high-current surface mount PNP silicon switching transistor designed for load management in portable applications. Produced by onsemi, this transistor is part of the MMBT589LT1 series and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Symbol | Characteristic | Value | Unit |
|---|---|---|---|
| VCEO | Collector-Emitter Voltage | -30 | Vdc |
| VCBO | Collector-Base Voltage | -50 | Vdc |
| VEBO | Emitter-Base Voltage | -5.0 | Vdc |
| IC | Collector Current - Continuous | -1.0 | Adc |
| ICM | Collector Current - Peak | -2.0 | A |
| PD (FR-5 Board) | Total Device Dissipation | 310 | mW |
| RθJA (FR-5 Board) | Thermal Resistance Junction-to-Ambient | 403 | °C/W |
| PD (Alumina Substrate) | Total Device Dissipation | 710 | mW |
| RθJA (Alumina Substrate) | Thermal Resistance Junction-to-Ambient | 176 | °C/W |
| PDsingle | Total Device Dissipation (Single Pulse < 10 sec.) | 575 | mW |
| TJ, Tstg | Junction and Storage Temperature | -55 to +150 | °C |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
- High collector current of up to 1 A continuous and 2 A peak.
- Collector-emitter voltage rating of -30 Vdc.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High cutoff frequency (fT) of 100 MHz.
- Compact SOT-23 (TO-236) package.
Applications
The NSVMMBT589LT1G is designed for load management in various portable applications, including:
- Automotive systems requiring high reliability and compliance with automotive standards.
- Portable electronic devices such as smartphones, tablets, and laptops.
- Power management circuits in consumer electronics.
- Switching and amplification roles in industrial control systems.
Q & A
- What is the maximum collector-emitter voltage of the NSVMMBT589LT1G?
The maximum collector-emitter voltage (VCEO) is -30 Vdc.
- What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is rated at -1.0 A.
- Is the NSVMMBT589LT1G RoHS compliant?
Yes, the NSVMMBT589LT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the thermal resistance junction-to-ambient for the FR-5 board?
The thermal resistance junction-to-ambient (RθJA) for the FR-5 board is 403 °C/W.
- What is the junction and storage temperature range for this transistor?
The junction and storage temperature range is -55 to +150 °C.
- What is the cutoff frequency (fT) of the NSVMMBT589LT1G?
The cutoff frequency (fT) is 100 MHz.
- What package type is the NSVMMBT589LT1G available in?
The transistor is available in a compact SOT-23 (TO-236) package.
- Is the NSVMMBT589LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the peak collector current rating of this transistor?
The peak collector current (ICM) is rated at -2.0 A.
- What is the base-emitter saturation voltage (VBE(sat)) for this transistor?
The base-emitter saturation voltage (VBE(sat)) is approximately -1.2 V.
