Overview
The MMBT5087LT3G is a low noise PNP silicon transistor manufactured by onsemi. This device is part of the MMBT5087L series and is designed for applications requiring low noise and high reliability. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments. The transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -50 | Vdc |
| Collector-Base Voltage | VCBO | -50 | Vdc |
| Emitter-Base Voltage | VEBO | -3.0 | Vdc |
| Collector Current - Continuous | IC | -50 | mAdc |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain | hFE | 250 - 800 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.3 | Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.85 | Vdc |
| Current-Gain — Bandwidth Product | fT | 40 | MHz |
| Output Capacitance | Cobo | 4.0 | pF |
Key Features
- Low Noise Operation: The MMBT5087LT3G is designed to provide low noise characteristics, making it suitable for applications requiring high signal integrity.
- AEC-Q101 Qualified and PPAP Capable: This transistor meets the stringent requirements of the automotive industry and is capable of undergoing Production Part Approval Process (PPAP).
- Environmental Compliance: The device is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring it meets current environmental regulations.
- High Reliability: With a robust design and strict manufacturing standards, this transistor offers high reliability in various operating conditions.
- Compact Package: The SOT-23 (TO-236) package makes it ideal for space-constrained applications.
Applications
- Automotive Systems: Suitable for use in automotive electronics due to its AEC-Q101 qualification and PPAP capability.
- Audio and Signal Processing: The low noise characteristics make it ideal for audio amplifiers, signal processing circuits, and other noise-sensitive applications.
- Industrial Control Systems: Can be used in industrial control systems where reliability and low noise are critical.
- Consumer Electronics: Applicable in various consumer electronic devices requiring low noise and high reliability.
Q & A
- What is the maximum collector-emitter voltage for the MMBT5087LT3G?
The maximum collector-emitter voltage (VCEO) is -50 Vdc.
- Is the MMBT5087LT3G RoHS compliant?
- What is the thermal resistance, junction-to-ambient for this transistor?
The thermal resistance, junction-to-ambient (RθJA) is 417 °C/W.
- What is the DC current gain (hFE) range for the MMBT5087LT3G?
The DC current gain (hFE) ranges from 250 to 800.
- What is the typical current-gain — bandwidth product (fT) for this transistor?
The typical current-gain — bandwidth product (fT) is 40 MHz.
- What package type is the MMBT5087LT3G available in?
The MMBT5087LT3G is available in the SOT-23 (TO-236) package.
- Is the MMBT5087LT3G suitable for automotive applications?
- What is the maximum collector current for continuous operation?
The maximum collector current (IC) for continuous operation is -50 mAdc.
- What is the base-emitter saturation voltage (VBE(sat)) for this transistor?
The base-emitter saturation voltage (VBE(sat)) is 0.85 Vdc.
- What is the output capacitance (Cobo) for the MMBT5087LT3G?
The output capacitance (Cobo) is 4.0 pF.
