Overview
The MMBTA56LT3G is a PNP bipolar junction transistor (BJT) produced by onsemi. It is designed for use in both linear and switching applications, making it versatile for various electronic circuits. The transistor is housed in a miniature SOT-23 surface mount package, which is ideal for saving board space in compact designs. This device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -80 | Vdc |
| Collector-Base Voltage | VCBO | -80 | Vdc |
| Emitter-Base Voltage | VEBO | -4.0 | Vdc |
| Collector Current - Continuous | IC | -500 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | RθJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Nominal Transition Frequency (fT) | fT | 50 | MHz |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.25 | Vdc |
| Base-Emitter On Voltage | VBE(on) | -1.2 | Vdc |
Key Features
- Pb-Free and RoHS Compliant: Ensures environmental sustainability and regulatory compliance.
- Miniature SOT-23 Package: Saves board space and is suitable for surface mount applications.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Low VCE(sat): Provides higher efficiency and extends battery life in applications.
- High Transition Frequency (fT): 50 MHz, making it suitable for high-frequency applications.
Applications
- Linear and Switching Applications: Suitable for use in amplifiers, switches, and other electronic circuits.
- Automotive Electronics: AEC-Q101 qualified, making it suitable for automotive applications.
- Consumer Electronics: Used in various consumer electronic devices due to its compact size and high performance.
- Industrial Control Systems: Can be used in industrial control systems requiring reliable and efficient transistor operation.
Q & A
- What is the collector-emitter voltage rating of the MMBTA56LT3G?
The collector-emitter voltage rating is -80 Vdc.
- What is the maximum collector current for the MMBTA56LT3G?
The maximum collector current is -500 mA.
- Is the MMBTA56LT3G RoHS compliant?
- What is the nominal transition frequency (fT) of the MMBTA56LT3G?
The nominal transition frequency is 50 MHz.
- What package type does the MMBTA56LT3G use?
The MMBTA56LT3G uses a SOT-23 surface mount package.
- Is the MMBTA56LT3G suitable for automotive applications?
- What is the thermal resistance, junction-to-ambient, for the MMBTA56LT3G on an FR-5 board?
The thermal resistance, junction-to-ambient, is 556 °C/W.
- What is the collector-emitter saturation voltage (VCE(sat)) for the MMBTA56LT3G?
The collector-emitter saturation voltage is -0.25 Vdc.
- What is the base-emitter on voltage (VBE(on)) for the MMBTA56LT3G?
The base-emitter on voltage is -1.2 Vdc.
- What are the junction and storage temperature ranges for the MMBTA56LT3G?
The junction and storage temperature ranges are -55 to +150 °C.
