Overview
The MMBTA06LT3G is a high-performance NPN silicon driver transistor manufactured by onsemi. This device is designed for a wide range of applications, including automotive and other sectors that require stringent quality and reliability standards. The MMBTA06LT3G is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive and industrial environments. It is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Base Voltage | VCBO | 80 | Vdc |
| Emitter-Base Voltage | VEBO | 4.0 | Vdc |
| Collector Current - Continuous | IC | 500 | mAdc |
| Electrostatic Discharge | ESD | HBM Class 3B, MM Class C, CDM Class IV | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 80 | Vdc |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 4.0 | Vdc |
| Collector Cutoff Current | ICES | 0.1 | μAdc |
| DC Current Gain | hFE | 100 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | Vdc |
| Base-Emitter On Voltage | VBE(on) | 1.2 | Vdc |
| Current-Gain Bandwidth Product | fT | 100 | MHz |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
- High collector-emitter voltage (VCEO) of 80 Vdc and high collector-base voltage (VCBO) of 80 Vdc.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.25 Vdc and low base-emitter on voltage (VBE(on)) of 1.2 Vdc.
- High DC current gain (hFE) of 100.
- High current-gain bandwidth product (fT) of 100 MHz.
- Wide operating temperature range from -55°C to +150°C.
Applications
The MMBTA06LT3G is versatile and can be used in various applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as power management, signal amplification, and switching circuits.
- Industrial control systems: It can be used in industrial control circuits, motor control, and power supplies.
- Consumer electronics: Suitable for use in audio amplifiers, power supplies, and other consumer electronic devices.
- General-purpose amplification and switching: Its high performance and reliability make it a good choice for general-purpose amplification and switching applications.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the MMBTA06LT3G?
The maximum collector-emitter voltage (VCEO) is 80 Vdc. - Is the MMBTA06LT3G Pb-free and RoHS compliant?
Yes, the MMBTA06LT3G is Pb-free, halogen-free, and RoHS compliant. - What is the DC current gain (hFE) of the MMBTA06LT3G?
The DC current gain (hFE) is 100. - What is the collector-emitter saturation voltage (VCE(sat)) of the MMBTA06LT3G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc. - What is the operating temperature range of the MMBTA06LT3G?
The operating temperature range is from -55°C to +150°C. - Is the MMBTA06LT3G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. - What is the current-gain bandwidth product (fT) of the MMBTA06LT3G?
The current-gain bandwidth product (fT) is 100 MHz. - What is the maximum collector current (IC) of the MMBTA06LT3G?
The maximum collector current (IC) is 500 mAdc. - What is the emitter-base breakdown voltage (V(BR)EBO) of the MMBTA06LT3G?
The emitter-base breakdown voltage (V(BR)EBO) is 4.0 Vdc. - What is the package type of the MMBTA06LT3G?
The package type is SOT-23 (TO-236).
