Overview
The MMBTA05LT1G is a surface-mount NPN silicon driver transistor produced by onsemi. It is part of the MMBT series and is designed for general-purpose applications. This transistor is known for its high reliability, robust performance, and compliance with environmental standards. It is packaged in a SOT-23 (SC-59, TO-236) case, making it suitable for a wide range of electronic devices where space is a constraint.
Key Specifications
Attribute | Value | Unit |
---|---|---|
Polarity | NPN | |
Type | General Purpose | |
Collector-Emitter Voltage (VCEO) | 60 | Vdc |
Collector-Base Voltage (VCBO) | 60 | Vdc |
Emitter-Base Voltage (VEBO) | 4.0 | Vdc |
Collector Current - Continuous (IC) | 500 | mAdc |
Power Dissipation - Total (PD) | 225 | mW |
DC Current Gain - Minimum (hFE) | 100 | |
Package Style | SOT-23 (SC-59, TO-236) | |
Mounting Method | Surface Mount | |
Junction and Storage Temperature (TJ, Tstg) | -55 to +150 | °C |
Key Features
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant: Ensures environmental compliance and safety.
- High Collector-Emitter Voltage: Up to 60 Vdc, making it suitable for a variety of applications.
- High Collector Current: Continuous current of 500 mA, supporting robust operation.
- Low Power Dissipation: Total device dissipation of 225 mW, suitable for energy-efficient designs.
- High DC Current Gain: Minimum gain of 100, ensuring reliable amplification.
- Compact SOT-23 Package: Ideal for space-constrained designs.
- Wide Operating Temperature Range: From -55°C to +150°C, making it versatile for various environments.
Applications
- General Purpose Amplification: Suitable for a wide range of amplification needs in electronic circuits.
- Switching Circuits: Can be used in switching applications due to its high current gain and low saturation voltage.
- Automotive Electronics: AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- Consumer Electronics: Used in various consumer electronic devices where reliability and compactness are crucial.
Q & A
- What is the polarity of the MMBTA05LT1G transistor?
The MMBTA05LT1G is an NPN transistor.
- What is the maximum collector-emitter voltage of the MMBTA05LT1G?
The maximum collector-emitter voltage (VCEO) is 60 Vdc.
- What is the continuous collector current rating of the MMBTA05LT1G?
The continuous collector current (IC) is 500 mA.
- What is the package style of the MMBTA05LT1G?
The transistor is packaged in a SOT-23 (SC-59, TO-236) case.
- Is the MMBTA05LT1G RoHS compliant?
- What is the junction and storage temperature range of the MMBTA05LT1G?
The junction and storage temperature range is -55°C to +150°C.
- What is the minimum DC current gain of the MMBTA05LT1G?
The minimum DC current gain (hFE) is 100.
- Is the MMBTA05LT1G suitable for automotive applications?
- What is the total device dissipation of the MMBTA05LT1G?
The total device dissipation (PD) is 225 mW.
- What is the thermal resistance, junction-to-ambient of the MMBTA05LT1G?
The thermal resistance, junction-to-ambient (RJA) is 556 °C/W for an FR-5 board.