MMBTA05LT1G
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onsemi MMBTA05LT1G

Manufacturer No:
MMBTA05LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTA05LT1G is a surface-mount NPN silicon driver transistor produced by onsemi. It is part of the MMBT series and is designed for general-purpose applications. This transistor is known for its high reliability, robust performance, and compliance with environmental standards. It is packaged in a SOT-23 (SC-59, TO-236) case, making it suitable for a wide range of electronic devices where space is a constraint.

Key Specifications

Attribute Value Unit
Polarity NPN
Type General Purpose
Collector-Emitter Voltage (VCEO) 60 Vdc
Collector-Base Voltage (VCBO) 60 Vdc
Emitter-Base Voltage (VEBO) 4.0 Vdc
Collector Current - Continuous (IC) 500 mAdc
Power Dissipation - Total (PD) 225 mW
DC Current Gain - Minimum (hFE) 100
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Junction and Storage Temperature (TJ, Tstg) -55 to +150 °C

Key Features

  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant: Ensures environmental compliance and safety.
  • High Collector-Emitter Voltage: Up to 60 Vdc, making it suitable for a variety of applications.
  • High Collector Current: Continuous current of 500 mA, supporting robust operation.
  • Low Power Dissipation: Total device dissipation of 225 mW, suitable for energy-efficient designs.
  • High DC Current Gain: Minimum gain of 100, ensuring reliable amplification.
  • Compact SOT-23 Package: Ideal for space-constrained designs.
  • Wide Operating Temperature Range: From -55°C to +150°C, making it versatile for various environments.

Applications

  • General Purpose Amplification: Suitable for a wide range of amplification needs in electronic circuits.
  • Switching Circuits: Can be used in switching applications due to its high current gain and low saturation voltage.
  • Automotive Electronics: AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  • Consumer Electronics: Used in various consumer electronic devices where reliability and compactness are crucial.

Q & A

  1. What is the polarity of the MMBTA05LT1G transistor?

    The MMBTA05LT1G is an NPN transistor.

  2. What is the maximum collector-emitter voltage of the MMBTA05LT1G?

    The maximum collector-emitter voltage (VCEO) is 60 Vdc.

  3. What is the continuous collector current rating of the MMBTA05LT1G?

    The continuous collector current (IC) is 500 mA.

  4. What is the package style of the MMBTA05LT1G?

    The transistor is packaged in a SOT-23 (SC-59, TO-236) case.

  5. Is the MMBTA05LT1G RoHS compliant?
  6. What is the junction and storage temperature range of the MMBTA05LT1G?

    The junction and storage temperature range is -55°C to +150°C.

  7. What is the minimum DC current gain of the MMBTA05LT1G?

    The minimum DC current gain (hFE) is 100.

  8. Is the MMBTA05LT1G suitable for automotive applications?
  9. What is the total device dissipation of the MMBTA05LT1G?

    The total device dissipation (PD) is 225 mW.

  10. What is the thermal resistance, junction-to-ambient of the MMBTA05LT1G?

    The thermal resistance, junction-to-ambient (RJA) is 556 °C/W for an FR-5 board.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:225 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Similar Products

Part Number MMBTA05LT1G MMBTA55LT1G MMBTA06LT1G MMBTA05LT3G MMBTA05LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
Transistor Type NPN PNP NPN NPN -
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA -
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 80 V 60 V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA -
Current - Collector Cutoff (Max) 100nA 100nA 100nA 100nA -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V -
Power - Max 225 mW 225 mW 225 mW 225 mW -
Frequency - Transition 100MHz 50MHz 100MHz 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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