MMBTA06LT1G
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onsemi MMBTA06LT1G

Manufacturer No:
MMBTA06LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi MMBTA06LT1G is a high-performance NPN silicon bipolar junction transistor (BJT) designed for driver applications. It is housed in a compact SOT-23 surface mount package, making it ideal for space-constrained designs. This transistor is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive and other applications requiring stringent quality and reliability standards. The device is also Pb-free, halogen-free, and RoHS compliant, aligning with environmental regulations.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO80Vdc
Collector-Base VoltageVCBO80Vdc
Emitter-Base VoltageVEBO4.0Vdc
Collector Current - ContinuousIC500mAdc
Electrostatic Discharge (ESD)HBMClass 3B
Electrostatic Discharge (ESD)MMClass C
Electrostatic Discharge (ESD)CDMClass IV
Package TypeSOT-23

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
  • Pb-free, halogen-free, and RoHS compliant.
  • Compact SOT-23 surface mount package for space-efficient designs.
  • High collector-emitter voltage (VCEO) of 80 Vdc and high collector-base voltage (VCBO) of 80 Vdc.
  • Continuous collector current (IC) of 500 mAdc.
  • Robust electrostatic discharge (ESD) protection: HBM Class 3B, MM Class C, and CDM Class IV.

Applications

The onsemi MMBTA06LT1G is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as sensors, actuators, and control modules.
  • Industrial control: It can be used in industrial control systems, motor drivers, and power management circuits.
  • Consumer electronics: Suitable for use in audio amplifiers, power supplies, and other consumer electronic devices.
  • General-purpose switching and amplification: It can be used in various general-purpose switching and amplification applications where high reliability and performance are required.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the MMBTA06LT1G?
    The collector-emitter voltage (VCEO) of the MMBTA06LT1G is 80 Vdc.
  2. What is the package type of the MMBTA06LT1G?
    The MMBTA06LT1G is housed in a SOT-23 surface mount package.
  3. Is the MMBTA06LT1G RoHS compliant?
    Yes, the MMBTA06LT1G is Pb-free, halogen-free, and RoHS compliant.
  4. What is the continuous collector current (IC) of the MMBTA06LT1G?
    The continuous collector current (IC) of the MMBTA06LT1G is 500 mAdc.
  5. What are the ESD protection classes for the MMBTA06LT1G?
    The MMBTA06LT1G has ESD protection classes of HBM Class 3B, MM Class C, and CDM Class IV.
  6. Is the MMBTA06LT1G suitable for automotive applications?
    Yes, the MMBTA06LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
  7. What are some common applications of the MMBTA06LT1G?
    The MMBTA06LT1G can be used in automotive systems, industrial control, consumer electronics, and general-purpose switching and amplification.
  8. What is the emitter-base voltage (VEBO) of the MMBTA06LT1G?
    The emitter-base voltage (VEBO) of the MMBTA06LT1G is 4.0 Vdc.
  9. How does the MMBTA06LT1G handle thermal stress?
    The MMBTA06LT1G has specified thermal limits and safe operating areas as detailed in the datasheet to ensure reliable operation under various thermal conditions.
  10. Where can I find detailed ordering and shipping information for the MMBTA06LT1G?
    Detailed ordering and shipping information can be found in the package dimensions section of the datasheet.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:225 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBTA06LT1G MMBTA56LT1G MMBTA06LT3G MMBTA06WT1G MMBTA05LT1G MMBTA06LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi Infineon Technologies
Product Status Active Active Active Active Active Obsolete
Transistor Type NPN PNP NPN NPN NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA (ICBO) 100nA 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 225 mW 225 mW 225 mW 150 mW 225 mW 225 mW
Frequency - Transition 100MHz 50MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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