Overview
The MMBTA56LT1G-HFE is a PNP general-purpose amplifier transistor produced by onsemi. This device is designed for a wide range of applications requiring collector currents up to 500 mA. It is housed in a SOT-23-3 (TO-236) package, which is Pb-free, halogen-free, and RoHS compliant. The transistor is suitable for various electronic circuits where high current gain and low saturation voltage are required.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -80 | Vdc |
| Collector-Base Voltage | VCBO | -80 | Vdc |
| Emitter-Base Voltage | VEBO | -4.0 | Vdc |
| Collector Current - Continuous | IC | -500 | mA |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 to +150 | °C |
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| DC Current Gain (IC = -10 mA, VCE = -1.0 V) | hFE | 100 | |
| Collector-Emitter Saturation Voltage (IC = -100 mA, IB = -10 mA) | VCE(sat) | -0.25 | Vdc |
| Base-Emitter On Voltage (IC = -100 mA, VCE = -1.0 V) | VBE(on) | -1.2 | Vdc |
| Current-Gain Bandwidth Product (IC = -100 mA, VCE = -1.0 V, f = 100 MHz) | fT | 50 | MHz |
Key Features
- Pb-free, halogen-free, and RoHS compliant package
- High current gain (hFE) of up to 100
- Low collector-emitter saturation voltage (VCE(sat)) of -0.25 V
- Low base-emitter on voltage (VBE(on)) of -1.2 V
- High current-gain bandwidth product (fT) of 50 MHz
- Operating temperature range from -55°C to +150°C
- Suitable for general-purpose amplifier applications
Applications
- General-purpose amplifier circuits
- Switching and driver applications
- Audio amplifiers and other low-power audio circuits
- Automotive and industrial control systems
- Consumer electronics and appliances
Q & A
- What is the maximum collector-emitter voltage for the MMBTA56LT1G-HFE transistor?
The maximum collector-emitter voltage (VCEO) is -80 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) rating is -500 mA.
- What is the thermal resistance, junction-to-ambient (RθJA), for the MMBTA56LT1G-HFE?
The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W.
- What is the DC current gain (hFE) of the MMBTA56LT1G-HFE transistor?
The DC current gain (hFE) is up to 100.
- What is the collector-emitter saturation voltage (VCE(sat)) for this transistor?
The collector-emitter saturation voltage (VCE(sat)) is -0.25 Vdc.
- What is the base-emitter on voltage (VBE(on)) for the MMBTA56LT1G-HFE?
The base-emitter on voltage (VBE(on)) is -1.2 Vdc.
- What is the current-gain bandwidth product (fT) of the MMBTA56LT1G-HFE transistor?
The current-gain bandwidth product (fT) is 50 MHz.
- Is the MMBTA56LT1G-HFE transistor RoHS compliant?
Yes, the MMBTA56LT1G-HFE transistor is RoHS compliant, Pb-free, and halogen-free.
- What is the operating temperature range for the MMBTA56LT1G-HFE transistor?
The operating temperature range is from -55°C to +150°C.
- What package type is the MMBTA56LT1G-HFE transistor available in?
The transistor is available in a SOT-23-3 (TO-236) package.
