Overview
The MMBT2222AWT3G is an NPN bipolar transistor designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package, which is optimized for low power surface mount applications. This transistor is part of onsemi's portfolio of general purpose transistors and is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 75 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 600 | mAdc |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.6 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.15 | V |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 280 | C/W |
| Package Type | SC-70-3 / SOT-323-3 |
Key Features
- AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- Miniature SC-70/SOT-323 Surface Mount Package, which saves board space and is designed for low power surface mount applications.
- Low VCE(sat) of 0.6 V, which provides higher efficiency and extends battery life.
Applications
The MMBT2222AWT3G is designed for general purpose amplifier applications. It is suitable for use in a variety of electronic circuits, including but not limited to:
- Automotive systems due to its AEC-Q101 qualification and PPAP capability.
- Low power surface mount applications where space is a constraint.
- General purpose amplifiers and switching circuits.
Q & A
- What is the collector-emitter voltage (VCEO) of the MMBT2222AWT3G?
The collector-emitter voltage (VCEO) is 40 Vdc.
- What is the package type of the MMBT2222AWT3G?
The package type is SC-70-3 / SOT-323-3.
- Is the MMBT2222AWT3G RoHS compliant?
- What is the maximum collector current (IC) of the MMBT2222AWT3G?
The maximum collector current (IC) is 600 mA.
- What is the thermal resistance, junction-to-ambient (RθJA) of the MMBT2222AWT3G?
The thermal resistance, junction-to-ambient (RθJA) is 280 C/W.
- What are the typical applications of the MMBT2222AWT3G?
The MMBT2222AWT3G is typically used in general purpose amplifier applications, automotive systems, and low power surface mount applications.
- Is the MMBT2222AWT3G AEC-Q101 qualified?
- What is the base-emitter saturation voltage (VBE(sat)) of the MMBT2222AWT3G?
The base-emitter saturation voltage (VBE(sat)) is 0.15 V.
- What is the junction and storage temperature range of the MMBT2222AWT3G?
The junction and storage temperature range is -55 to +150 °C.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MMBT2222AWT3G?
The collector-emitter saturation voltage (VCE(sat)) is 0.6 V.
