MMBT2222ATT3G
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onsemi MMBT2222ATT3G

Manufacturer No:
MMBT2222ATT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SC75 SOT416
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The MMBT2222ATT3G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for low-power surface mount applications and is housed in the SOT-416 (SC-75) package. This transistor is suitable for a wide range of amplifier and switching applications due to its robust electrical characteristics and compact packaging.

Key Specifications

Characteristic Symbol Min Max Unit
Collector-Emitter Voltage VCEO - 40 Vdc
Collector-Base Voltage VCBO - 75 Vdc
Emitter-Base Voltage VEBO - 6.0 Vdc
Collector Current - Continuous IC - 600 mAdc
Power Dissipation Pd - 150 mW
Transition Frequency fT - 300 MHz
Operating Temperature Range TJ -55 150 °C

Key Features

  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensuring environmental compliance and safety.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other high-reliability applications.
  • Ultra-Small Surface Mount Package: SOT-416 (SC-75) package for compact designs.
  • High Collector-Emitter Breakdown Voltage: Up to 40 Vdc, making it suitable for various amplifier and switching applications.
  • High Transition Frequency: Up to 300 MHz, enabling high-frequency operations.
  • Low Power Consumption: Maximum power dissipation of 150 mW.

Applications

  • General Purpose Amplifier Applications: Suitable for a wide range of low-power amplifier circuits.
  • Automotive Electronics: Qualified to AEC-Q101 standards, making it reliable for automotive use.
  • Consumer Electronics: Ideal for use in various consumer electronic devices due to its compact size and robust performance.
  • Industrial Control Systems: Can be used in industrial control circuits requiring reliable and efficient switching and amplification.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT2222ATT3G transistor?

    The maximum collector-emitter voltage (VCEO) is 40 Vdc.

  2. What is the package type of the MMBT2222ATT3G transistor?

    The transistor is housed in the SOT-416 (SC-75) package.

  3. Is the MMBT2222ATT3G transistor RoHS compliant?

    Yes, the transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  4. What is the maximum collector current of the MMBT2222ATT3G transistor?

    The maximum collector current (IC) is 600 mA.

  5. What is the transition frequency of the MMBT2222ATT3G transistor?

    The transition frequency (fT) is up to 300 MHz.

  6. What are the operating temperature ranges for the MMBT2222ATT3G transistor?

    The operating temperature range is from -55°C to 150°C.

  7. Is the MMBT2222ATT3G transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.

  8. What is the power dissipation of the MMBT2222ATT3G transistor?

    The maximum power dissipation (Pd) is 150 mW.

  9. Can the MMBT2222ATT3G transistor be used in high-frequency applications?

    Yes, it is suitable for high-frequency applications due to its high transition frequency.

  10. What is the typical base-emitter saturation voltage of the MMBT2222ATT3G transistor?

    The typical base-emitter saturation voltage (VBE(SAT)) is between 0.6 V and 1.2 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:150 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
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Similar Products

Part Number MMBT2222ATT3G MMBT2222AWT3G MMBT2222ALT3G MMBT2222ATT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) - 10nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 150 mW 150 mW 300 mW 150 mW
Frequency - Transition 300MHz 300MHz 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416
Supplier Device Package SC-75, SOT-416 SC-70-3 (SOT323) SOT-23-3 (TO-236) SC-75, SOT-416

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