MJD44H11-001
  • Share:

onsemi MJD44H11-001

Manufacturer No:
MJD44H11-001
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 80V 8A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD44H11-001 is a high-performance NPN bipolar power transistor manufactured by onsemi. This transistor is designed for general-purpose power and switching applications, making it suitable for output or driver stages in various electronic systems. It is known for its low collector-emitter saturation voltage and fast switching speeds, which are crucial for efficient operation in power amplifiers, switching regulators, and converters.

Key Specifications

Product Attribute Attribute Value
Manufacturer onsemi
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Transistor Type NPN
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Power - Max 1.75 W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Frequency - Transition 85MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V
Current - Collector (Ic) (Max) 8 A
Current - Collector Cutoff (Max) 1µA

Key Features

  • Low Collector Emitter Saturation Voltage: The MJD44H11-001 features a low Vce saturation voltage, which enhances efficiency in power amplifiers and switching applications.
  • Fast Switching Speeds: With a transition frequency of 85MHz, this transistor is ideal for high-speed switching applications.
  • Complementary Pairs: The availability of complementary PNP transistors (MJD45H11) simplifies design and ensures balanced performance in various circuits.
  • High Current Capability: The transistor can handle a maximum collector current of 8 A, making it suitable for high-power applications.
  • Wide Operating Temperature Range: It operates within a temperature range of -55°C to 150°C, ensuring reliability in diverse environmental conditions.
  • Pb-Free and RoHS Compliant: The device is lead-free and RoHS compliant, aligning with environmental regulations.

Applications

  • Power Amplifiers: The MJD44H11-001 is used in power amplifier stages due to its high current handling and low saturation voltage.
  • Switching Regulators and Converters: Its fast switching speeds and high current capability make it suitable for switching regulators and converters.
  • Driver Stages: It is often used in driver stages for various electronic systems requiring high power and fast switching.
  • Automotive and Industrial Applications: With its robust specifications and compliance with automotive standards (AEC-Q101 qualified), it is also used in automotive and industrial applications.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the MJD44H11-001?

    The maximum collector-emitter breakdown voltage is 80 V.

  2. What is the maximum collector current of the MJD44H11-001?

    The maximum collector current is 8 A.

  3. What is the operating temperature range of the MJD44H11-001?

    The operating temperature range is -55°C to 150°C (TJ).

  4. What is the transition frequency of the MJD44H11-001?

    The transition frequency is 85MHz.

  5. Is the MJD44H11-001 RoHS compliant?

    Yes, the MJD44H11-001 is RoHS compliant and lead-free.

  6. What type of package does the MJD44H11-001 come in?

    The MJD44H11-001 comes in a TO-251-3 Short Leads, IPak, TO-251AA package.

  7. What is the maximum power dissipation of the MJD44H11-001?

    The maximum power dissipation is 1.75 W.

  8. What is the DC current gain (hFE) of the MJD44H11-001?

    The DC current gain (hFE) is 40 @ 4A, 1V.

  9. What are some common applications of the MJD44H11-001?

    Common applications include power amplifiers, switching regulators, converters, and driver stages.

  10. Is the MJD44H11-001 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and suitable for automotive and other applications requiring unique site and control change requirements.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:85MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:I-PAK
0 Remaining View Similar

In Stock

-
250

Please send RFQ , we will respond immediately.

Same Series
MJD45H11T4G
MJD45H11T4G
TRANS PNP 80V 8A DPAK
MJD44H11T4G
MJD44H11T4G
TRANS NPN 80V 8A DPAK
MJD45H11RLG
MJD45H11RLG
TRANS PNP 80V 8A DPAK
MJD44H11RLG
MJD44H11RLG
TRANS NPN 80V 8A DPAK
NJVMJD45H11G
NJVMJD45H11G
TRANS PNP 80V 8A DPAK
NJVMJD45H11T4G-VF01
NJVMJD45H11T4G-VF01
TRANS PNP 80V 8A DPAK
NJVMJD44H11T4G-VF01
NJVMJD44H11T4G-VF01
TRANS NPN 80V 8A DPAK
MJD45H11-1G
MJD45H11-1G
TRANS PNP 80V 8A IPAK
NJVMJD45H11RLG-VF01
NJVMJD45H11RLG-VF01
TRANS PNP 80V 8A DPAK-4
NJVMJD45H11D3T4G
NJVMJD45H11D3T4G
TRANS PNP 80V 8A DPAK
MJD44H11-001
MJD44H11-001
TRANS NPN 80V 8A IPAK
MJD44H11T5
MJD44H11T5
TRANS NPN 80V 8A DPAK

Similar Products

Part Number MJD44H11-001 MJD45H11-001
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 1.75 W 1.75 W
Frequency - Transition 85MHz 90MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK I-PAK

Related Product By Categories

PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
TIP30C
TIP30C
NTE Electronics, Inc
TRANS PNP 100V 1A TO220
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
MMBT3906L3-TP
MMBT3906L3-TP
Micro Commercial Co
TRANS PNP 40V 0.2A DFN1006-3
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC847CW/ZLF
BC847CW/ZLF
Nexperia USA Inc.
TRANS SOT323

Related Product By Brand

BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A