MJD44H11-001
  • Share:

onsemi MJD44H11-001

Manufacturer No:
MJD44H11-001
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 80V 8A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD44H11-001 is a high-performance NPN bipolar power transistor manufactured by onsemi. This transistor is designed for general-purpose power and switching applications, making it suitable for output or driver stages in various electronic systems. It is known for its low collector-emitter saturation voltage and fast switching speeds, which are crucial for efficient operation in power amplifiers, switching regulators, and converters.

Key Specifications

Product Attribute Attribute Value
Manufacturer onsemi
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Transistor Type NPN
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Power - Max 1.75 W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Frequency - Transition 85MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V
Current - Collector (Ic) (Max) 8 A
Current - Collector Cutoff (Max) 1µA

Key Features

  • Low Collector Emitter Saturation Voltage: The MJD44H11-001 features a low Vce saturation voltage, which enhances efficiency in power amplifiers and switching applications.
  • Fast Switching Speeds: With a transition frequency of 85MHz, this transistor is ideal for high-speed switching applications.
  • Complementary Pairs: The availability of complementary PNP transistors (MJD45H11) simplifies design and ensures balanced performance in various circuits.
  • High Current Capability: The transistor can handle a maximum collector current of 8 A, making it suitable for high-power applications.
  • Wide Operating Temperature Range: It operates within a temperature range of -55°C to 150°C, ensuring reliability in diverse environmental conditions.
  • Pb-Free and RoHS Compliant: The device is lead-free and RoHS compliant, aligning with environmental regulations.

Applications

  • Power Amplifiers: The MJD44H11-001 is used in power amplifier stages due to its high current handling and low saturation voltage.
  • Switching Regulators and Converters: Its fast switching speeds and high current capability make it suitable for switching regulators and converters.
  • Driver Stages: It is often used in driver stages for various electronic systems requiring high power and fast switching.
  • Automotive and Industrial Applications: With its robust specifications and compliance with automotive standards (AEC-Q101 qualified), it is also used in automotive and industrial applications.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the MJD44H11-001?

    The maximum collector-emitter breakdown voltage is 80 V.

  2. What is the maximum collector current of the MJD44H11-001?

    The maximum collector current is 8 A.

  3. What is the operating temperature range of the MJD44H11-001?

    The operating temperature range is -55°C to 150°C (TJ).

  4. What is the transition frequency of the MJD44H11-001?

    The transition frequency is 85MHz.

  5. Is the MJD44H11-001 RoHS compliant?

    Yes, the MJD44H11-001 is RoHS compliant and lead-free.

  6. What type of package does the MJD44H11-001 come in?

    The MJD44H11-001 comes in a TO-251-3 Short Leads, IPak, TO-251AA package.

  7. What is the maximum power dissipation of the MJD44H11-001?

    The maximum power dissipation is 1.75 W.

  8. What is the DC current gain (hFE) of the MJD44H11-001?

    The DC current gain (hFE) is 40 @ 4A, 1V.

  9. What are some common applications of the MJD44H11-001?

    Common applications include power amplifiers, switching regulators, converters, and driver stages.

  10. Is the MJD44H11-001 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and suitable for automotive and other applications requiring unique site and control change requirements.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:85MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:I-PAK
0 Remaining View Similar

In Stock

-
250

Please send RFQ , we will respond immediately.

Same Series
MJD45H11T4G
MJD45H11T4G
TRANS PNP 80V 8A DPAK
NJVMJD44H11D3T4G
NJVMJD44H11D3T4G
TRANS NPN 80V 8A DPAK
MJD44H11T4G
MJD44H11T4G
TRANS NPN 80V 8A DPAK
MJD44H11RLG
MJD44H11RLG
TRANS NPN 80V 8A DPAK
MJD45H11G
MJD45H11G
TRANS PNP 80V 8A DPAK
NJVMJD44H11RLG-VF01
NJVMJD44H11RLG-VF01
TRANS NPN 80V 8A DPAK
NJVMJD45H11T4G-VF01
NJVMJD45H11T4G-VF01
TRANS PNP 80V 8A DPAK
MJD45H11-1G
MJD45H11-1G
TRANS PNP 80V 8A IPAK
NJVMJD44H11G
NJVMJD44H11G
TRANS NPN 80V 8A DPAK
NJVMJD45H11D3T4G
NJVMJD45H11D3T4G
TRANS PNP 80V 8A DPAK
MJD44H11T5
MJD44H11T5
TRANS NPN 80V 8A DPAK
MJD44H11T5G
MJD44H11T5G
TRANS NPN 80V 8A DPAK

Similar Products

Part Number MJD44H11-001 MJD45H11-001
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 1.75 W 1.75 W
Frequency - Transition 85MHz 90MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK I-PAK

Related Product By Categories

PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
BUL128D-B
BUL128D-B
STMicroelectronics
TRANS NPN 400V 4A TO220
BUF420AW
BUF420AW
STMicroelectronics
TRANS NPN 450V 30A TO247-3
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220
BCV47E6393HTSA1
BCV47E6393HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23

Related Product By Brand

1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC