MJD44H11-001
  • Share:

onsemi MJD44H11-001

Manufacturer No:
MJD44H11-001
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 80V 8A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD44H11-001 is a high-performance NPN bipolar power transistor manufactured by onsemi. This transistor is designed for general-purpose power and switching applications, making it suitable for output or driver stages in various electronic systems. It is known for its low collector-emitter saturation voltage and fast switching speeds, which are crucial for efficient operation in power amplifiers, switching regulators, and converters.

Key Specifications

Product Attribute Attribute Value
Manufacturer onsemi
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Transistor Type NPN
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Power - Max 1.75 W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Frequency - Transition 85MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V
Current - Collector (Ic) (Max) 8 A
Current - Collector Cutoff (Max) 1µA

Key Features

  • Low Collector Emitter Saturation Voltage: The MJD44H11-001 features a low Vce saturation voltage, which enhances efficiency in power amplifiers and switching applications.
  • Fast Switching Speeds: With a transition frequency of 85MHz, this transistor is ideal for high-speed switching applications.
  • Complementary Pairs: The availability of complementary PNP transistors (MJD45H11) simplifies design and ensures balanced performance in various circuits.
  • High Current Capability: The transistor can handle a maximum collector current of 8 A, making it suitable for high-power applications.
  • Wide Operating Temperature Range: It operates within a temperature range of -55°C to 150°C, ensuring reliability in diverse environmental conditions.
  • Pb-Free and RoHS Compliant: The device is lead-free and RoHS compliant, aligning with environmental regulations.

Applications

  • Power Amplifiers: The MJD44H11-001 is used in power amplifier stages due to its high current handling and low saturation voltage.
  • Switching Regulators and Converters: Its fast switching speeds and high current capability make it suitable for switching regulators and converters.
  • Driver Stages: It is often used in driver stages for various electronic systems requiring high power and fast switching.
  • Automotive and Industrial Applications: With its robust specifications and compliance with automotive standards (AEC-Q101 qualified), it is also used in automotive and industrial applications.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the MJD44H11-001?

    The maximum collector-emitter breakdown voltage is 80 V.

  2. What is the maximum collector current of the MJD44H11-001?

    The maximum collector current is 8 A.

  3. What is the operating temperature range of the MJD44H11-001?

    The operating temperature range is -55°C to 150°C (TJ).

  4. What is the transition frequency of the MJD44H11-001?

    The transition frequency is 85MHz.

  5. Is the MJD44H11-001 RoHS compliant?

    Yes, the MJD44H11-001 is RoHS compliant and lead-free.

  6. What type of package does the MJD44H11-001 come in?

    The MJD44H11-001 comes in a TO-251-3 Short Leads, IPak, TO-251AA package.

  7. What is the maximum power dissipation of the MJD44H11-001?

    The maximum power dissipation is 1.75 W.

  8. What is the DC current gain (hFE) of the MJD44H11-001?

    The DC current gain (hFE) is 40 @ 4A, 1V.

  9. What are some common applications of the MJD44H11-001?

    Common applications include power amplifiers, switching regulators, converters, and driver stages.

  10. Is the MJD44H11-001 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and suitable for automotive and other applications requiring unique site and control change requirements.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:85MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:I-PAK
0 Remaining View Similar

In Stock

-
250

Please send RFQ , we will respond immediately.

Same Series
MJD44H11T4G
MJD44H11T4G
TRANS NPN 80V 8A DPAK
MJD45H11RLG
MJD45H11RLG
TRANS PNP 80V 8A DPAK
MJD44H11RLG
MJD44H11RLG
TRANS NPN 80V 8A DPAK
MJD45H11G
MJD45H11G
TRANS PNP 80V 8A DPAK
NJVMJD44H11RLG-VF01
NJVMJD44H11RLG-VF01
TRANS NPN 80V 8A DPAK
NJVMJD45H11T4G-VF01
NJVMJD45H11T4G-VF01
TRANS PNP 80V 8A DPAK
NJVMJD44H11T4G-VF01
NJVMJD44H11T4G-VF01
TRANS NPN 80V 8A DPAK
MJD45H11-1G
MJD45H11-1G
TRANS PNP 80V 8A IPAK
NJVMJD44H11G
NJVMJD44H11G
TRANS NPN 80V 8A DPAK
MJD44H11-001
MJD44H11-001
TRANS NPN 80V 8A IPAK
MJD44H11T5
MJD44H11T5
TRANS NPN 80V 8A DPAK
MJD44H11T5G
MJD44H11T5G
TRANS NPN 80V 8A DPAK

Similar Products

Part Number MJD44H11-001 MJD45H11-001
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 1.75 W 1.75 W
Frequency - Transition 85MHz 90MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK I-PAK

Related Product By Categories

BC857W,115
BC857W,115
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
MMBT2222ALT3G
MMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MMBT5550LT1G
MMBT5550LT1G
onsemi
TRANS NPN 140V 0.6A SOT23-3
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBT2484
MMBT2484
Fairchild Semiconductor
TRANS NPN 60V 0.1A SOT23-3
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4