MJD44H11-001
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onsemi MJD44H11-001

Manufacturer No:
MJD44H11-001
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 80V 8A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD44H11-001 is a high-performance NPN bipolar power transistor manufactured by onsemi. This transistor is designed for general-purpose power and switching applications, making it suitable for output or driver stages in various electronic systems. It is known for its low collector-emitter saturation voltage and fast switching speeds, which are crucial for efficient operation in power amplifiers, switching regulators, and converters.

Key Specifications

Product Attribute Attribute Value
Manufacturer onsemi
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Transistor Type NPN
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Power - Max 1.75 W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Frequency - Transition 85MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V
Current - Collector (Ic) (Max) 8 A
Current - Collector Cutoff (Max) 1µA

Key Features

  • Low Collector Emitter Saturation Voltage: The MJD44H11-001 features a low Vce saturation voltage, which enhances efficiency in power amplifiers and switching applications.
  • Fast Switching Speeds: With a transition frequency of 85MHz, this transistor is ideal for high-speed switching applications.
  • Complementary Pairs: The availability of complementary PNP transistors (MJD45H11) simplifies design and ensures balanced performance in various circuits.
  • High Current Capability: The transistor can handle a maximum collector current of 8 A, making it suitable for high-power applications.
  • Wide Operating Temperature Range: It operates within a temperature range of -55°C to 150°C, ensuring reliability in diverse environmental conditions.
  • Pb-Free and RoHS Compliant: The device is lead-free and RoHS compliant, aligning with environmental regulations.

Applications

  • Power Amplifiers: The MJD44H11-001 is used in power amplifier stages due to its high current handling and low saturation voltage.
  • Switching Regulators and Converters: Its fast switching speeds and high current capability make it suitable for switching regulators and converters.
  • Driver Stages: It is often used in driver stages for various electronic systems requiring high power and fast switching.
  • Automotive and Industrial Applications: With its robust specifications and compliance with automotive standards (AEC-Q101 qualified), it is also used in automotive and industrial applications.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the MJD44H11-001?

    The maximum collector-emitter breakdown voltage is 80 V.

  2. What is the maximum collector current of the MJD44H11-001?

    The maximum collector current is 8 A.

  3. What is the operating temperature range of the MJD44H11-001?

    The operating temperature range is -55°C to 150°C (TJ).

  4. What is the transition frequency of the MJD44H11-001?

    The transition frequency is 85MHz.

  5. Is the MJD44H11-001 RoHS compliant?

    Yes, the MJD44H11-001 is RoHS compliant and lead-free.

  6. What type of package does the MJD44H11-001 come in?

    The MJD44H11-001 comes in a TO-251-3 Short Leads, IPak, TO-251AA package.

  7. What is the maximum power dissipation of the MJD44H11-001?

    The maximum power dissipation is 1.75 W.

  8. What is the DC current gain (hFE) of the MJD44H11-001?

    The DC current gain (hFE) is 40 @ 4A, 1V.

  9. What are some common applications of the MJD44H11-001?

    Common applications include power amplifiers, switching regulators, converters, and driver stages.

  10. Is the MJD44H11-001 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and suitable for automotive and other applications requiring unique site and control change requirements.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:85MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:I-PAK
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Similar Products

Part Number MJD44H11-001 MJD45H11-001
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 1.75 W 1.75 W
Frequency - Transition 85MHz 90MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK I-PAK

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