Overview
The MJD45H11G is a PNP power transistor produced by onsemi, designed for general-purpose power and switching applications. It is part of the MJD45H11 series, which includes complementary NPN and PNP transistors. This transistor is suitable for use in output or driver stages in various applications such as switching regulators, converters, and power amplifiers.
Key Specifications
| Rating Symbol | Max Unit | Description |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 80 Vdc | Maximum collector-emitter voltage |
| Emitter-Base Voltage (VEB) | 5 Vdc | Maximum emitter-base voltage |
| Collector Current - Continuous (IC) | 8 Adc | Continuous collector current |
| Collector Current - Peak (ICM) | 16 Adc | Peak collector current |
| Total Power Dissipation @ TC = 25°C (PD) | 20 W | Total power dissipation at case temperature of 25°C |
| Operating and Storage Junction Temperature Range (TJ, Tstg) | -55 to +150 °C | Junction and storage temperature range |
| Thermal Resistance, Junction-to-Case (RJC) | 6.25 °C/W | Thermal resistance from junction to case |
| Thermal Resistance, Junction-to-Ambient (RJA) | 71.4 °C/W | Thermal resistance from junction to ambient |
| Lead Temperature for Soldering (TL) | 260 °C | Maximum lead temperature for soldering |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1 Vdc | Saturation voltage between collector and emitter |
| Base-Emitter Saturation Voltage (VBE(sat)) | 1.5 Vdc | Saturation voltage between base and emitter |
| DC Current Gain (hFE) | 40 - 60 | DC current gain at specified conditions |
| Gain Bandwidth Product (fT) | 90 MHz | Gain bandwidth product at specified conditions |
Key Features
- Lead Formed for Surface Mount Application: Available in both straight lead and formed lead versions for surface mount applications.
- Complementary Pairs: The MJD45H11G is part of a complementary pair with the MJD44H11, simplifying design processes.
- Low Collector Emitter Saturation Voltage: Offers low VCE(sat) for efficient operation.
- Fast Switching Speeds: Features fast switching times, making it suitable for high-frequency applications.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly packaging.
Applications
The MJD45H11G is designed for various power and switching applications, including:
- Output or driver stages in switching regulators and converters.
- Power amplifiers.
- Automotive and industrial control systems.
- General-purpose power switching.
Q & A
- What is the maximum collector-emitter voltage for the MJD45H11G?
The maximum collector-emitter voltage (VCEO) is 80 Vdc.
- What is the continuous collector current rating for the MJD45H11G?
The continuous collector current (IC) is 8 Adc.
- What is the thermal resistance from junction to case for the MJD45H11G?
The thermal resistance from junction to case (RJC) is 6.25 °C/W.
- Is the MJD45H11G RoHS compliant?
Yes, the MJD45H11G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What are the typical applications for the MJD45H11G?
Typical applications include output or driver stages in switching regulators, converters, power amplifiers, and general-purpose power switching.
- What is the gain bandwidth product for the MJD45H11G?
The gain bandwidth product (fT) is 90 MHz.
- Is the MJD45H11G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the base-emitter saturation voltage for the MJD45H11G?
The base-emitter saturation voltage (VBE(sat)) is 1.5 Vdc.
- What are the switching times for the MJD45H11G?
The delay and rise times are approximately 300 ns, storage time is 500 ns, and fall time is 100 ns.
- How is the MJD45H11G packaged?
The MJD45H11G is available in DPAK (Pb-Free) packages with various shipping options, including rail and tape & reel.
