Overview
The MJD45H11J is a high-power bipolar transistor manufactured by Nexperia USA Inc. This PNP transistor is designed for high-performance applications, offering a combination of high thermal power dissipation capability and high energy efficiency. It is packaged in a TO-252 (DPAK) surface-mount device (SMD) plastic package, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Type | PNP Bipolar Transistor |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector Current (IC) | 8 A |
| DC Current Gain (hFE) | 60 @ 2 A, 1 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1 V @ 400 mA, 8 A |
| Transition Frequency | 80 MHz |
| Maximum Power Dissipation | 1.75 W |
| Operating Temperature (TJ) | 150°C |
| Package | TO-252 (DPAK), Surface Mount |
Key Features
- High thermal power dissipation capability
- High energy efficiency due to less heat generation
- Electrically similar to the popular MJD45H series
- Low collector-emitter saturation voltage
- Fast switching speeds
Applications
- Power management
- Load switch
- Linear mode voltage regulator
- Constant current drive backlighting
- Motor drive
- Relay replacement
The MJD45H11J is versatile and can be used across various industries including automotive, industrial, power, computing, consumer, mobile, and wearables.
Q & A
- Q: What is the collector-emitter voltage (VCEO) of the MJD45H11J transistor?
A: The collector-emitter voltage (VCEO) of the MJD45H11J transistor is 80 V.
- Q: What is the maximum collector current (IC) of the MJD45H11J transistor?
A: The maximum collector current (IC) of the MJD45H11J transistor is 8 A.
- Q: What is the DC current gain (hFE) of the MJD45H11J transistor?
A: The DC current gain (hFE) of the MJD45H11J transistor is 60 @ 2 A, 1 V.
- Q: What is the transition frequency of the MJD45H11J transistor?
A: The transition frequency of the MJD45H11J transistor is 80 MHz.
- Q: What is the maximum power dissipation of the MJD45H11J transistor?
A: The maximum power dissipation of the MJD45H11J transistor is 1.75 W.
- Q: What is the operating temperature range of the MJD45H11J transistor?
A: The operating temperature range of the MJD45H11J transistor is up to 150°C.
- Q: What package type is the MJD45H11J transistor available in?
A: The MJD45H11J transistor is available in a TO-252 (DPAK) surface-mount package.
- Q: What are some common applications of the MJD45H11J transistor?
A: The MJD45H11J transistor is commonly used in power management, load switching, linear mode voltage regulation, constant current drive backlighting, motor drive, and relay replacement.
- Q: Is the MJD45H11J transistor automotive qualified?
A: The MJD45H11J transistor is part of the series that includes automotive-qualified options, but it is not explicitly stated as automotive qualified in the provided sources.
- Q: Where can I find more detailed technical information about the MJD45H11J transistor?
A: Detailed technical information, including datasheets and SPICE models, can be found on the Nexperia website or through authorized distributors like Farnell and Element14.
