Overview
The MJD44H11T5G, produced by onsemi, is a complementary power transistor designed for general-purpose power and switching applications. This NPN transistor is part of the MJD44H11 series and is packaged in a DPAK (TO-252) surface mount configuration. It is electrically similar to the popular D44H series and is suitable for use in output or driver stages in various applications such as switching regulators, converters, and power amplifiers.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage | VCEO(sus) | 80 | - | - | Vdc |
| Collector Cutoff Current | ICES | - | - | 1.0 | μA |
| Emitter Cutoff Current | IEBO | - | - | 1.0 | μA |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 1 | Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 1.5 | Vdc |
| DC Current Gain | hFE | 60 | 40 | - | - |
| Collector Capacitance | Ccb | - | - | 45 | pF |
| Gain Bandwidth Product | fT | - | - | 85 | MHz |
| Delay and Rise Times | td + tr | - | - | 300 | ns |
| Storage Time | ts | - | - | 500 | ns |
| Fall Time | tf | - | - | 140 | ns |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 71.4 | °C/W |
| Lead Temperature for Soldering | TL | - | - | 260 | °C |
Key Features
- Lead formed for surface mount application in plastic sleeves (no suffix) and straight lead version in plastic sleeves (“−1” suffix)
- Electrically similar to popular D44H/D45H series
- Low collector-emitter saturation voltage
- Fast switching speeds
- Complementary pairs simplify designs
- Epoxy meets UL 94 V−0 @ 0.125 in
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable
- Pb-free, halogen-free/BFR-free, and RoHS compliant
Applications
The MJD44H11T5G is designed for use in various power and switching applications, including:
- Output or driver stages in switching regulators
- Converters
- Power amplifiers
- Automotive and other applications requiring AEC−Q101 qualification and PPAP capability
Q & A
- What is the MJD44H11T5G used for?
The MJD44H11T5G is used for general-purpose power and switching applications, such as output or driver stages in switching regulators, converters, and power amplifiers.
- What is the package type of the MJD44H11T5G?
The MJD44H11T5G is packaged in a DPAK (TO-252) surface mount configuration.
- What are the key electrical characteristics of the MJD44H11T5G?
Key characteristics include a collector-emitter sustaining voltage of 80 Vdc, collector-emitter saturation voltage of 1 Vdc, and a DC current gain of 60 at VCE = 1 Vdc and IC = 2 Adc.
- Is the MJD44H11T5G RoHS compliant?
- What is the thermal resistance of the MJD44H11T5G?
The thermal resistance from junction-to-case (RJC) is 6.25 °C/W, and from junction-to-ambient (RJA) is 71.4 °C/W.
- What are the switching times for the MJD44H11T5G?
The delay and rise times are 300 ns, storage time is 500 ns, and fall time is 140 ns.
- Is the MJD44H11T5G suitable for automotive applications?
- What is the lead temperature for soldering the MJD44H11T5G?
The lead temperature for soldering is 260 °C.
- Are there any complementary pairs available for the MJD44H11T5G?
- What is the gain bandwidth product of the MJD44H11T5G?
The gain bandwidth product is 85 MHz.
