NJVMJD45H11RLG-VF01
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onsemi NJVMJD45H11RLG-VF01

Manufacturer No:
NJVMJD45H11RLG-VF01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 8A DPAK-4
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The NJVMJD45H11RLG-VF01 is a PNP bipolar power transistor developed by ON Semiconductor. This component is part of the NJVMJD4xH11xxG series, designed for general-purpose power and switching applications. It is particularly suited for output or driver stages in switching regulators, converters, and power amplifiers. The transistor is packaged in a DPAK (TO-252) surface mount package, making it ideal for applications requiring high reliability and efficiency.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Sustaining Voltage VCEO(sus) - - 80 Vdc
Collector Cutoff Current ICES - - 1.0 μA
Emitter Cutoff Current IEBO - - 1.0 μA
Collector-Emitter Saturation Voltage VCE(sat) - - 1 Vdc
Base-Emitter Saturation Voltage VBE(sat) - - 1.5 Vdc
DC Current Gain hFE 40 60 - -
Collector Capacitance Ccb - - 130 pF
Gain Bandwidth Product fT - - 90 MHz
Delay and Rise Times td + tr - - 135 ns
Storage Time ts - - 500 ns
Fall Time tf - - 100 ns
Maximum Collector-Emitter Voltage VCEO - - 80 Vdc
Maximum Emitter-Base Voltage VEBO - - 5 Vdc
Maximum Collector Current IC - - 8 A
Maximum Power Dissipation Pd - - 1750 mW
Operating Temperature Range Tj -55 - 150 °C

Key Features

  • Complementary Pairs: The NJVMJD45H11RLG-VF01 is part of a complementary pair with the NPN NJVMJD44H11, simplifying design and ensuring balanced performance.
  • Low Collector-Emitter Saturation Voltage: Offers low VCE(sat) of 1 V, reducing power losses and improving efficiency.
  • Fast Switching Speeds: Features fast switching times with delay and rise times of 135 ns and fall time of 100 ns, making it suitable for high-frequency applications.
  • AEC-Q101 Qualified and PPAP Capable: Meets automotive standards, ensuring reliability and consistency in automotive and other demanding applications.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.
  • Surface Mount Package: DPAK (TO-252) package for easy surface mounting and high reliability.
  • High Operating Temperature Range: Operates from -55°C to 150°C, making it suitable for a wide range of environmental conditions.

Applications

  • Switching Regulators: Ideal for use in switching regulators due to its fast switching speeds and low saturation voltages.
  • Converters: Suitable for various converter applications, including DC-DC converters and AC-DC converters.
  • Power Amplifiers: Used in power amplifier stages where high current and voltage handling are required.
  • Automotive Systems: AEC-Q101 qualified, making it suitable for use in automotive systems and other applications requiring high reliability.
  • General Purpose Power and Switching: General-purpose use in output or driver stages where high performance and reliability are needed.

Q & A

  1. What is the maximum collector-emitter voltage of the NJVMJD45H11RLG-VF01?

    The maximum collector-emitter voltage is 80 Vdc.

  2. What is the maximum collector current of this transistor?

    The maximum collector current is 8 A.

  3. What is the operating temperature range of the NJVMJD45H11RLG-VF01?

    The operating temperature range is from -55°C to 150°C.

  4. Is the NJVMJD45H11RLG-VF01 RoHS compliant?

    Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  5. What package type is used for the NJVMJD45H11RLG-VF01?

    The transistor is packaged in a DPAK (TO-252) surface mount package.

  6. What are the key features of the NJVMJD45H11RLG-VF01?

    Key features include low collector-emitter saturation voltage, fast switching speeds, and AEC-Q101 qualification.

  7. What are some typical applications for the NJVMJD45H11RLG-VF01?

    Typical applications include switching regulators, converters, power amplifiers, and automotive systems.

  8. Is the NJVMJD45H11RLG-VF01 part of a complementary pair?

    Yes, it is part of a complementary pair with the NPN NJVMJD44H11.

  9. What is the maximum power dissipation of the NJVMJD45H11RLG-VF01?

    The maximum power dissipation is 1750 mW.

  10. What is the gain bandwidth product of the NJVMJD45H11RLG-VF01?

    The gain bandwidth product is 90 MHz.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:90MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number NJVMJD45H11RLG-VF01 NJVMJD44H11RLG-VF01
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 1.75 W 1.75 W
Frequency - Transition 90MHz 85MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK

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