Overview
The MJD45H11-1G is a PNP complementary power transistor produced by onsemi, designed for general-purpose power and switching applications. This transistor is part of the MJD45H11 series and is packaged in a DPAK (TO-252) case, which is suitable for surface mount applications. The device is electrically similar to the popular D45H series and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 80 | Vdc |
| Emitter-Base Voltage | VEB | - | - | 5 | Vdc |
| Collector Current - Continuous | IC | - | - | 8 | Adc |
| Collector Current - Peak | ICM | - | - | 16 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | - | - | 20 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | - | - | 71.4 | °C/W |
| Lead Temperature for Soldering | TL | - | - | 260 | °C |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 1 | Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 1.5 | Vdc |
Key Features
- Lead formed for surface mount application in plastic sleeves (no suffix) and straight lead version in plastic sleeves (“-1” suffix)
- Electrically similar to popular D45H series
- Low collector-emitter saturation voltage
- Fast switching speeds
- Complementary pairs simplify designs
- Epoxy meets UL 94 V-0 @ 0.125 in
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
- Pb-free, halogen-free/BFR-free, and RoHS compliant
Applications
The MJD45H11-1G transistor is designed for various applications including:
- Output or driver stages in switching regulators
- Converters
- Power amplifiers
- Automotive and industrial power management systems
- General-purpose power and switching applications
Q & A
- What is the maximum collector-emitter voltage for the MJD45H11-1G transistor?
The maximum collector-emitter voltage (VCEO) is 80 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is 8 Adc.
- What is the thermal resistance, junction-to-ambient for the MJD45H11-1G?
The thermal resistance, junction-to-ambient (RθJA) is 71.4 °C/W.
- Is the MJD45H11-1G transistor RoHS compliant?
- What are the typical applications for the MJD45H11-1G transistor?
The transistor is used in output or driver stages in switching regulators, converters, power amplifiers, and general-purpose power and switching applications.
- What is the base-emitter saturation voltage for the MJD45H11-1G?
The base-emitter saturation voltage (VBE(sat)) is 1.5 Vdc.
- Is the MJD45H11-1G suitable for automotive applications?
- What is the lead temperature for soldering the MJD45H11-1G?
The lead temperature for soldering (TL) is 260 °C.
- What is the operating and storage junction temperature range for the MJD45H11-1G?
The operating and storage junction temperature range (TJ, Tstg) is -55 to +150 °C.
- Does the MJD45H11-1G come in different package types?
