Overview
The MJD45H11T4G is a PNP power transistor produced by onsemi, designed for general-purpose power and switching applications. It is part of the MJD45H11 series, which includes complementary NPN transistors like the MJD44H11. These transistors are suitable for use in output or driver stages in various applications such as switching regulators, converters, and power amplifiers.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 80 | Vdc |
| Emitter-Base Voltage | VEB | - | - | 5 | Vdc |
| Collector Current - Continuous | IC | - | - | 8 | Adc |
| Collector Current - Peak | ICM | - | - | 16 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | - | - | 20 | W |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 71.4 | °C/W |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 1 | Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 1.5 | Vdc |
| DC Current Gain | hFE | 40 | - | - | - |
| Gain Bandwidth Product | fT | - | - | 90 | MHz |
Key Features
- Lead formed for surface mount application in plastic sleeves.
- Straight lead version available with “-1” suffix.
- Electrically similar to popular D44H/D45H series.
- Low collector-emitter saturation voltage.
- Fast switching speeds.
- Complementary pairs simplify designs.
- Epoxy meets UL 94 V-0 @ 0.125 in.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
The MJD45H11T4G is designed for use in various power and switching applications, including:
- Output or driver stages in switching regulators.
- Converters.
- Power amplifiers.
- Automotive and industrial power management systems.
Q & A
- What is the maximum collector-emitter voltage for the MJD45H11T4G?
The maximum collector-emitter voltage (VCEO) is 80 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is 8 Adc.
- What is the peak collector current rating?
The peak collector current (ICM) is 16 Adc.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RJC) is 6.25 °C/W.
- Is the MJD45H11T4G RoHS compliant?
- What are the typical applications for this transistor?
Typical applications include output or driver stages in switching regulators, converters, and power amplifiers.
- Does the MJD45H11T4G have automotive qualifications?
- What is the gain bandwidth product of the MJD45H11T4G?
The gain bandwidth product (fT) is 90 MHz.
- What is the base-emitter saturation voltage?
The base-emitter saturation voltage (VBE(sat)) is 1.5 Vdc.
- What is the collector-emitter saturation voltage?
The collector-emitter saturation voltage (VCE(sat)) is 1 Vdc.
