NJVMJD45H11T4G-VF01
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onsemi NJVMJD45H11T4G-VF01

Manufacturer No:
NJVMJD45H11T4G-VF01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NJVMJD45H11T4G-VF01 is a high-performance PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for various power management and high-current applications, offering efficient energy transfer and robust performance. It is packaged in a DPAK-3 (TO-252-3) case, which is suitable for surface mount technology (SMT) and provides excellent thermal dissipation. The device is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

Parameter Value Unit
Transistor Type PNP
Collector-Emitter Voltage (VCEO) Max 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector-Emitter Saturation Voltage 1 V
Maximum DC Collector Current 8 A
Power Dissipation (Pd) 20 W
Gain Bandwidth Product (fT) 90 MHz
Minimum Operating Temperature -55 °C
Maximum Operating Temperature 150 °C
DC Current Gain (hFE) Min @ Ic, Vce 40 @ 4A, 1V
Package/Case DPAK-3 (TO-252-3)

Key Features

  • High Current Capability: The transistor can handle up to 8 A of DC collector current, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage rating of 80 V, it is ideal for applications requiring high voltage handling.
  • Low Saturation Voltage: The collector-emitter saturation voltage is 1 V, which helps in reducing power losses.
  • High Gain Bandwidth Product: The transistor has a gain bandwidth product of 90 MHz, ensuring good high-frequency performance.
  • Wide Operating Temperature Range: The device operates from -55°C to 150°C, making it suitable for harsh environments.
  • AEC-Q101 Qualified: This qualification ensures the transistor meets the stringent requirements for automotive applications.
  • Surface Mount Package: The DPAK-3 package is designed for surface mount technology, providing ease of integration and good thermal dissipation.

Applications

  • Power Management Circuits: Suitable for use in DC-DC converters, voltage regulators, and other power management circuits.
  • Motor Control: Can be used in motor control circuits due to its high current and voltage handling capabilities.
  • Audio Amplifiers: Ideal for high-power audio amplifier applications where reliability and performance are critical.
  • Lighting Control: Used in lighting control systems that require high current and voltage handling.
  • Automotive Systems: AEC-Q101 qualification makes it suitable for various automotive applications.

Q & A

  1. What is the maximum collector-emitter voltage of the NJVMJD45H11T4G-VF01 transistor?

    The maximum collector-emitter voltage (VCEO) is 80 V.

  2. What is the maximum DC collector current of this transistor?

    The maximum DC collector current is 8 A.

  3. What is the operating temperature range of the NJVMJD45H11T4G-VF01?

    The operating temperature range is from -55°C to 150°C.

  4. What is the package type of the NJVMJD45H11T4G-VF01 transistor?

    The transistor is packaged in a DPAK-3 (TO-252-3) case.

  5. Is the NJVMJD45H11T4G-VF01 transistor AEC-Q101 qualified?

    Yes, the transistor is AEC-Q101 qualified, making it suitable for automotive applications.

  6. What is the gain bandwidth product (fT) of the NJVMJD45H11T4G-VF01 transistor?

    The gain bandwidth product (fT) is 90 MHz.

  7. What is the collector-emitter saturation voltage of the NJVMJD45H11T4G-VF01 transistor?

    The collector-emitter saturation voltage is 1 V.

  8. What is the DC current gain (hFE) of the NJVMJD45H11T4G-VF01 transistor?

    The DC current gain (hFE) is 40 at 4 A and 1 V.

  9. Is the NJVMJD45H11T4G-VF01 transistor RoHS compliant?

    Yes, the transistor is RoHS compliant.

  10. What are some common applications of the NJVMJD45H11T4G-VF01 transistor?

    Common applications include power management circuits, DC-DC converters, motor control, audio amplifiers, and lighting control systems.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:90MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number NJVMJD45H11T4G-VF01 NJVMJD44H11T4G-VF01
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 1.75 W 1.75 W
Frequency - Transition 90MHz 85MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK

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