Overview
The NSV60200LT1G is a 60 V, 4.0 A, low VCE(sat) PNP transistor from onsemi's e2PowerEdge family. This miniature surface mount device is designed for low voltage, high speed switching applications where efficient energy control is crucial. It features ultra-low saturation voltage (VCE(sat)) and high current gain capability, making it suitable for a variety of applications including DC-DC converters, power management in portable devices, and automotive systems.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit | |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | -60 | Vdc |
| Collector-Base Voltage | VCBO | - | - | -80 | Vdc |
| Emitter-Base Voltage | VEBO | - | - | -7.0 | Vdc |
| Collector Current - Continuous | IC | - | - | -2.0 | A |
| Collector Current - Peak | ICM | - | - | -4.0 | A |
| Collector-Emitter Saturation Voltage (IC = -1.0 A, IB = -0.100 A) | VCE(sat) | - | -0.095 | -0.180 | V |
| Base-Emitter Saturation Voltage (IC = -1.0 A, IB = -0.010 A) | VBE(sat) | - | -0.900 | - | V |
| Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) | fT | 100 | - | - | MHz |
| Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) | Cibo | - | - | 325 | pF |
| Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) | Cobo | - | - | 62 | pF |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 270 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | - | - | °C |
Key Features
- Ultra-low saturation voltage (VCE(sat)) for efficient energy control.
- High current gain capability.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- High speed switching capabilities.
- Linear gain (Beta) makes them ideal components in analog amplifiers.
- Can be driven directly from PMU’s control outputs.
Applications
- DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
- Low voltage motor controls in mass storage products like disc drives and tape drives.
- Automotive industry applications including air bag deployment and instrument clusters.
- Analog amplifiers due to their linear gain characteristics.
Q & A
- What is the maximum collector-emitter voltage of the NSV60200LT1G transistor?
The maximum collector-emitter voltage (VCEO) is -60 Vdc.
- What is the continuous collector current rating of the NSV60200LT1G?
The continuous collector current (IC) is -2.0 A.
- What is the peak collector current rating of the NSV60200LT1G?
The peak collector current (ICM) is -4.0 A.
- What is the typical collector-emitter saturation voltage (VCE(sat)) of the NSV60200LT1G?
The typical VCE(sat) at IC = -1.0 A and IB = -0.100 A is -0.095 V.
- Is the NSV60200LT1G RoHS compliant?
Yes, the NSV60200LT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What are the typical applications of the NSV60200LT1G transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive systems.
- What is the cutoff frequency of the NSV60200LT1G transistor?
The cutoff frequency (fT) is 100 MHz at IC = -100 mA and VCE = -5.0 V.
- What is the thermal resistance, junction-to-ambient (RJA) of the NSV60200LT1G?
The thermal resistance, junction-to-ambient (RJA) is 270 °C/W.
- What is the junction and storage temperature range of the NSV60200LT1G?
The junction and storage temperature range is -55 to +150 °C.
- Is the NSV60200LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
