Overview
The NSV40200LT1G is a 40 V, 2.0 A, low VCE(sat) PNP transistor from onsemi's e2PowerEdge family. This miniature surface mount device is designed for low voltage, high speed switching applications where efficient energy control is crucial. It features ultra-low saturation voltage (VCE(sat)) and high current gain capability, making it suitable for a variety of applications including DC-DC converters, power management in portable and battery-powered products, and low voltage motor controls.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | -40 | Vdc |
| Collector-Base Voltage | VCBO | - | - | -40 | Vdc |
| Emitter-Base Voltage | VEBO | - | - | -7.0 | Vdc |
| Collector Current - Continuous | IC | - | - | -2.0 | A |
| Collector Current - Peak | ICM | - | - | -4.0 | A |
| Base Current - Peak | IBM | - | - | -300 | mA |
| Electrostatic Discharge | ESD | - | - | HBM Class 3B, MM Class C | - |
| Total Device Dissipation (TA = 25°C) | PD | - | - | 460 mW (Note 1), 540 mW (Note 2) | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 270 °C/W (Note 1), 230 °C/W (Note 2) | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | +150 | °C |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.135 V (IC = -2.0 A, IB = -0.200 A) | V |
| DC Current Gain | hFE | 150 | - | 300 | - |
| Cutoff Frequency | fT | 100 | - | - | MHz |
Key Features
- Ultra-low saturation voltage (VCE(sat))
- High current gain capability
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
- AEC-Q101 Qualified and PPAP Capable for automotive and other critical applications
- Miniature SOT-23 surface mount package
- High speed switching capability
- Linear Gain (Beta) suitable for analog amplifiers
Applications
- DC-DC converters
- Power management in portable and battery-powered products (e.g., cellular and cordless phones, PDAs, computers, printers, digital cameras, MP3 players)
- Low voltage motor controls in mass storage products (e.g., disc drives, tape drives)
- Air bag deployment and instrument cluster in the automotive industry
Q & A
- What is the maximum collector-emitter voltage of the NSV40200LT1G transistor?
The maximum collector-emitter voltage (VCEO) is -40 Vdc.
- What is the continuous collector current rating of the NSV40200LT1G?
The continuous collector current (IC) is rated at -2.0 A.
- What is the peak base current rating for the NSV40200LT1G?
The peak base current (IBM) is rated at -300 mA.
- Is the NSV40200LT1G RoHS compliant?
Yes, the NSV40200LT1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- What is the typical collector-emitter saturation voltage (VCE(sat)) for the NSV40200LT1G?
The typical collector-emitter saturation voltage (VCE(sat)) is 0.135 V at IC = -2.0 A and IB = -0.200 A.
- What is the cutoff frequency (fT) of the NSV40200LT1G?
The cutoff frequency (fT) is 100 MHz.
- What are the typical applications for the NSV40200LT1G transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications such as air bag deployment and instrument clusters.
- What is the thermal resistance, junction-to-ambient (RJA) for the NSV40200LT1G?
The thermal resistance, junction-to-ambient (RJA), is 270 °C/W (Note 1) and 230 °C/W (Note 2).
- Is the NSV40200LT1G qualified for automotive applications?
Yes, the NSV40200LT1G is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other critical applications.
- What is the package type and shipping quantity for the NSV40200LT1G?
The NSV40200LT1G comes in a SOT-23 package and is shipped in quantities of 3,000 per tape and reel).
