Overview
The NSS40200LT1G is a 40 V, 2.0 A, low VCE(sat) PNP transistor from onsemi's e2PowerEdge family. This miniature surface mount device is designed for low voltage, high speed switching applications where efficient energy control is crucial. It features ultra-low saturation voltage (VCE(sat)) and high current gain capability, making it suitable for a variety of applications.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | -40 | Vdc |
| Collector-Base Voltage | VCBO | - | - | -40 | Vdc |
| Emitter-Base Voltage | VEBO | - | - | -7.0 | Vdc |
| Collector Current - Continuous | IC | - | - | -2.0 | A |
| Collector Current - Peak | ICM | - | - | -4.0 | A |
| Base Current - Peak | IBM | - | - | -300 | mA |
| Electrostatic Discharge | ESD | - | - | HBM Class 3B, MM Class C | - |
| Thermal Resistance, Junction-to-Ambient | RθJA | - | - | 270 °C/W | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | +150 | °C |
| DC Current Gain (hFE) | hFE | 150 | 220 | 300 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | - | - | 0.135 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | VBE(sat) | - | - | 0.900 | V |
| Cutoff Frequency (fT) | fT | - | - | 100 | MHz |
Key Features
- Ultra-low saturation voltage (VCE(sat)) for efficient energy control.
- High current gain capability.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- High speed switching capability.
- Linear gain (Beta) makes them ideal for analog amplifiers.
- Miniature surface mount SOT-23 package.
Applications
- DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
- Low voltage motor controls in mass storage products like disc drives and tape drives.
- Automotive applications including air bag deployment and instrument clusters.
- Analog amplifiers due to their linear gain characteristics.
Q & A
- What is the maximum collector-emitter voltage of the NSS40200LT1G transistor?
The maximum collector-emitter voltage (VCEO) is -40 Vdc.
- What is the continuous collector current rating of the NSS40200LT1G?
The continuous collector current (IC) is -2.0 A.
- Is the NSS40200LT1G transistor RoHS compliant?
Yes, the NSS40200LT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What are the typical applications of the NSS40200LT1G transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications.
- What is the cutoff frequency (fT) of the NSS40200LT1G transistor?
The cutoff frequency (fT) is 100 MHz.
- What is the collector-emitter saturation voltage (VCE(sat)) of the NSS40200LT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is typically 0.135 V.
- Is the NSS40200LT1G transistor suitable for high speed switching applications?
Yes, it is designed for high speed switching applications.
- What is the thermal resistance, junction-to-ambient (RθJA) of the NSS40200LT1G transistor?
The thermal resistance, junction-to-ambient (RθJA), is 270 °C/W.
- What are the package and marking details of the NSS40200LT1G transistor?
The transistor is packaged in a SOT-23 (TO-236) case and is marked with specific device code, date code, and Pb-free indicator.
- Is the NSS40200LT1G transistor AEC-Q101 qualified?
Yes, the NSS40200LT1G transistor is AEC-Q101 qualified and PPAP capable.
