Overview
The NSS40201LT1G is a low VCE(sat) NPN transistor manufactured by onsemi. This transistor is designed for use in low voltage, high speed switching applications where efficient energy control is crucial. It is packaged in a 3-pin SOT-23 format, making it suitable for a variety of compact electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Base Voltage (VCB) | 40 V |
| Emitter-Base Voltage (VEB) | 6 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 85 mV |
| Collector Current (IC) | 2.0 A |
| Power Dissipation (Pd) | 540 mW |
| Gain Bandwidth Product (fT) | 150 MHz |
| Package Type | 3-pin SOT-23 |
| RoHS Compliant | Yes |
Key Features
- Low VCE(sat) of 85 mV, ensuring low power losses in switching applications.
- High collector current of 2.0 A and collector-base voltage of 40 V, making it suitable for high current applications.
- High gain bandwidth product of 150 MHz, enabling high-speed switching.
- Compact 3-pin SOT-23 package for space-efficient designs.
- RoHS compliant, ensuring environmental sustainability.
Applications
The NSS40201LT1G is ideal for use in low voltage, high speed switching applications such as power management, motor control, and general-purpose switching circuits. It is also suitable for use in automotive and industrial control systems where efficient energy control is essential.
Q & A
- What is the collector-base voltage of the NSS40201LT1G transistor?
The collector-base voltage (VCB) of the NSS40201LT1G transistor is 40 V. - What is the emitter-base voltage of the NSS40201LT1G transistor?
The emitter-base voltage (VEB) of the NSS40201LT1G transistor is 6 V. - What is the collector-emitter saturation voltage of the NSS40201LT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) of the NSS40201LT1G transistor is 85 mV. - What is the maximum collector current of the NSS40201LT1G transistor?
The maximum collector current (IC) of the NSS40201LT1G transistor is 2.0 A. - What is the power dissipation of the NSS40201LT1G transistor?
The power dissipation (Pd) of the NSS40201LT1G transistor is 540 mW. - What is the gain bandwidth product of the NSS40201LT1G transistor?
The gain bandwidth product (fT) of the NSS40201LT1G transistor is 150 MHz. - What is the package type of the NSS40201LT1G transistor?
The NSS40201LT1G transistor is packaged in a 3-pin SOT-23 format. - Is the NSS40201LT1G transistor RoHS compliant?
Yes, the NSS40201LT1G transistor is RoHS compliant. - What are some typical applications of the NSS40201LT1G transistor?
The NSS40201LT1G transistor is typically used in low voltage, high speed switching applications such as power management, motor control, and general-purpose switching circuits. - Where can I find the datasheet for the NSS40201LT1G transistor?
You can find the datasheet for the NSS40201LT1G transistor on the official onsemi website or through distributors like Mouser, Newark, and RS Components.
