Overview
The NSV60201LT1G is a low VCE(sat) NPN transistor from ON Semiconductor's e2PowerEdge family. This miniature surface mount device is designed for low voltage, high speed switching applications where efficient energy control is crucial. It features ultra-low saturation voltage (VCE(sat)) and high current gain capability, making it ideal for various power management and switching applications.
Key Specifications
Characteristic | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Breakdown Voltage | V(BR)CEO | 60 | - | - | Vdc |
Collector-Base Breakdown Voltage | V(BR)CBO | 140 | - | - | Vdc |
Emitter-Base Breakdown Voltage | V(BR)EBO | 8.0 | - | - | Vdc |
Collector Cutoff Current | ICBO | - | - | 0.1 | μAdc |
Emitter Cutoff Current | IEBO | - | - | 0.1 | μAdc |
DC Current Gain (hFE) | - | 160 | 160 | 150 | - |
Collector-Emitter Saturation Voltage (VCE(sat)) | - | 0.020 | 0.075 | 0.140 | V |
Base-Emitter Saturation Voltage (VBE(sat)) | - | 0.790 | 0.900 | V | |
Cutoff Frequency (fT) | - | 100 | - | - | MHz |
Input Capacitance (Cibo) | - | 380 | - | - | pF |
Output Capacitance (Cobo) | - | 45 | - | - | pF |
Delay Time (td) | - | 55 | - | - | ns |
Rise Time (tr) | - | 100 | - | - | ns |
Storage Time (ts) | - | 1100 | - | - | ns |
Fall Time (tf) | - | 120 | - | - | ns |
Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Total Device Dissipation (Single Pulse < 10 sec.) | PDsingle | - | - | 710 | mW |
Junction-to-Ambient Thermal Resistance (RJA) | - | - | - | 230 | °C/W |
Key Features
- Ultra-low Saturation Voltage (VCE(sat)): Ensures efficient energy control and minimal power loss in switching applications.
- High Current Gain Capability: Allows the transistor to be driven directly from PMU’s control outputs and makes it suitable for analog amplifiers.
- High Speed Switching: Designed for low voltage, high speed switching applications.
- Miniature Surface Mount Package (SOT-23): Compact design suitable for space-constrained applications.
- Pb-Free Package: Compliant with environmental regulations.
- Wide Operating Temperature Range: Junction and storage temperature range from -55°C to +150°C.
Applications
- DC-DC Converters and Power Management: Ideal for portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
- Low Voltage Motor Controls: Used in mass storage products like disc drives and tape drives.
- Automotive Industry: Suitable for air bag deployment and instrument cluster applications.
- Analog Amplifiers: High current gain makes it suitable for use in analog amplifiers.
Q & A
- What is the maximum collector-emitter breakdown voltage of the NSV60201LT1G transistor?
The maximum collector-emitter breakdown voltage is 60 Vdc.
- What is the typical collector-emitter saturation voltage (VCE(sat)) at 1 A collector current?
The typical VCE(sat) at 1 A collector current is 0.075 V.
- What is the cutoff frequency (fT) of the NSV60201LT1G transistor?
The cutoff frequency is 100 MHz.
- What is the junction-to-ambient thermal resistance (RJA) of the NSV60201LT1G?
The junction-to-ambient thermal resistance is 230 °C/W.
- What are the typical applications of the NSV60201LT1G transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications.
- What is the package type of the NSV60201LT1G transistor?
The transistor is packaged in a Pb-free SOT-23 (TO-236) package.
- What is the maximum total device dissipation for a single pulse less than 10 seconds?
The maximum total device dissipation for a single pulse less than 10 seconds is 710 mW.
- What is the operating temperature range of the NSV60201LT1G transistor?
The junction and storage temperature range is from -55°C to +150°C.
- Can the NSV60201LT1G be used in analog amplifiers?
Yes, the high current gain makes it suitable for use in analog amplifiers.
- Is the NSV60201LT1G compliant with automotive standards?
Yes, it is compliant with AEC-Q101 standards for automotive and other applications requiring unique site and control change requirements.