NSV60201LT1G
  • Share:

onsemi NSV60201LT1G

Manufacturer No:
NSV60201LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSV60201LT1G is a low VCE(sat) NPN transistor from ON Semiconductor's e2PowerEdge family. This miniature surface mount device is designed for low voltage, high speed switching applications where efficient energy control is crucial. It features ultra-low saturation voltage (VCE(sat)) and high current gain capability, making it ideal for various power management and switching applications.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO 60 - - Vdc
Collector-Base Breakdown Voltage V(BR)CBO 140 - - Vdc
Emitter-Base Breakdown Voltage V(BR)EBO 8.0 - - Vdc
Collector Cutoff Current ICBO - - 0.1 μAdc
Emitter Cutoff Current IEBO - - 0.1 μAdc
DC Current Gain (hFE) - 160 160 150 -
Collector-Emitter Saturation Voltage (VCE(sat)) - 0.020 0.075 0.140 V
Base-Emitter Saturation Voltage (VBE(sat)) - 0.790 0.900 V
Cutoff Frequency (fT) - 100 - - MHz
Input Capacitance (Cibo) - 380 - - pF
Output Capacitance (Cobo) - 45 - - pF
Delay Time (td) - 55 - - ns
Rise Time (tr) - 100 - - ns
Storage Time (ts) - 1100 - - ns
Fall Time (tf) - 120 - - ns
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C
Total Device Dissipation (Single Pulse < 10 sec.) PDsingle - - 710 mW
Junction-to-Ambient Thermal Resistance (RJA) - - - 230 °C/W

Key Features

  • Ultra-low Saturation Voltage (VCE(sat)): Ensures efficient energy control and minimal power loss in switching applications.
  • High Current Gain Capability: Allows the transistor to be driven directly from PMU’s control outputs and makes it suitable for analog amplifiers.
  • High Speed Switching: Designed for low voltage, high speed switching applications.
  • Miniature Surface Mount Package (SOT-23): Compact design suitable for space-constrained applications.
  • Pb-Free Package: Compliant with environmental regulations.
  • Wide Operating Temperature Range: Junction and storage temperature range from -55°C to +150°C.

Applications

  • DC-DC Converters and Power Management: Ideal for portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
  • Low Voltage Motor Controls: Used in mass storage products like disc drives and tape drives.
  • Automotive Industry: Suitable for air bag deployment and instrument cluster applications.
  • Analog Amplifiers: High current gain makes it suitable for use in analog amplifiers.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the NSV60201LT1G transistor?

    The maximum collector-emitter breakdown voltage is 60 Vdc.

  2. What is the typical collector-emitter saturation voltage (VCE(sat)) at 1 A collector current?

    The typical VCE(sat) at 1 A collector current is 0.075 V.

  3. What is the cutoff frequency (fT) of the NSV60201LT1G transistor?

    The cutoff frequency is 100 MHz.

  4. What is the junction-to-ambient thermal resistance (RJA) of the NSV60201LT1G?

    The junction-to-ambient thermal resistance is 230 °C/W.

  5. What are the typical applications of the NSV60201LT1G transistor?

    Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications.

  6. What is the package type of the NSV60201LT1G transistor?

    The transistor is packaged in a Pb-free SOT-23 (TO-236) package.

  7. What is the maximum total device dissipation for a single pulse less than 10 seconds?

    The maximum total device dissipation for a single pulse less than 10 seconds is 710 mW.

  8. What is the operating temperature range of the NSV60201LT1G transistor?

    The junction and storage temperature range is from -55°C to +150°C.

  9. Can the NSV60201LT1G be used in analog amplifiers?

    Yes, the high current gain makes it suitable for use in analog amplifiers.

  10. Is the NSV60201LT1G compliant with automotive standards?

    Yes, it is compliant with AEC-Q101 standards for automotive and other applications requiring unique site and control change requirements.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:140mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 1A, 2V
Power - Max:460 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.48
1,930

Please send RFQ , we will respond immediately.

Same Series
NSV60201LT1G
NSV60201LT1G
TRANS NPN 60V 2A SOT23-3

Similar Products

Part Number NSV60201LT1G NSS60201LT1G NSV20201LT1G NSV40201LT1G NSV60200LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN PNP
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 20 V 40 V 60 V
Vce Saturation (Max) @ Ib, Ic 140mV @ 200mA, 2A 140mV @ 200mA, 2A 100mV @ 200mA, 2A 115mV @ 200mA, 2A 220mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1A, 2V 150 @ 1A, 2V 200 @ 500mA, 2V 200 @ 500mA, 2V 150 @ 500mA, 2V
Power - Max 460 mW 460 mW 460 mW 460 mW 460 mW
Frequency - Transition 100MHz 100MHz 150MHz 150MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

MMBT100
MMBT100
onsemi
TRANS NPN 45V 0.5A SOT23-3
PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
BCP56-16/DG/B2115
BCP56-16/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
PBSS5350Z,135
PBSS5350Z,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
BFS19,235
BFS19,235
Nexperia USA Inc.
TRANS NPN 20V 0.03A TO236AB
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BCP56H115
BCP56H115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX52E6327
BCX52E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
TIP122TU
TIP122TU
Fairchild Semiconductor
TRANS NPN DARL 100V 5A TO220-3
BCP69TA
BCP69TA
Diodes Incorporated
TRANS PNP BIPOL 20V 1A SOT-223

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT