FQD2N60CTM-WS
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onsemi FQD2N60CTM-WS

Manufacturer No:
FQD2N60CTM-WS
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 1.9A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD2N60CTM-WS is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for a variety of high-power applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Specifications

ParameterValueUnit
Number of Channels1 Channel
Drain-Source Breakdown Voltage (VDSS)600V
Continuous Drain Current (ID) at TC = 25°C1.9A
Continuous Drain Current (ID) at TC = 100°C1.14A
Pulsed Drain Current (IDM)7.6A
Gate-Source Voltage (VGSS)±30V
Static Drain-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 0.95 A4.7Ω
Thermal Resistance, Junction-to-Case (RθJC)2.87°C/W
Operating and Storage Temperature Range-55 to +150°C
Maximum Lead Temperature for Soldering300°C

Key Features

  • Low on-state resistance (RDS(on)) of 4.7 Ω (Max.) at VGS = 10 V, ID = 0.95 A
  • Low gate charge (Typ. 8.5 nC)
  • Low Crss (Typ. 4.3 pF)
  • 100% Avalanche tested
  • Halide free and RoHS compliant
  • Superior switching performance and high avalanche energy strength

Applications

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts
  • Other high-power switching applications

Q & A

  1. What is the maximum drain-source breakdown voltage of the FQD2N60CTM-WS MOSFET?
    The maximum drain-source breakdown voltage is 600 V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current rating at 25°C is 1.9 A.
  3. What is the maximum gate-source voltage?
    The maximum gate-source voltage is ±30 V.
  4. What is the typical gate charge?
    The typical gate charge is 8.5 nC.
  5. Is the FQD2N60CTM-WS MOSFET RoHS compliant?
    Yes, the FQD2N60CTM-WS MOSFET is RoHS compliant and halide free.
  6. What are the typical applications for this MOSFET?
    Typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  7. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case is 2.87 °C/W.
  8. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 300 °C.
  9. What is the operating and storage temperature range?
    The operating and storage temperature range is -55 to +150 °C.
  10. What is the maximum pulsed drain current?
    The maximum pulsed drain current is 7.6 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:235 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 44W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FQD2N60CTM-WS FQD3N60CTM-WS FQD5N60CTM-WS FQD6N60CTM-WS
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Last Time Buy Not For New Designs Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) 2.4A (Tc) 2.8A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.7Ohm @ 950mA, 10V 3.4Ohm @ 1.2A, 10V 2.5Ohm @ 1.4A, 10V 2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 14 nC @ 10 V 19 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 25 V 565 pF @ 25 V 670 pF @ 25 V 810 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.5W (Ta), 44W (Tc) 50W (Tc) 2.5W (Ta), 49W (Tc) 80W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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