Overview
The FQD3N60CTM-WS is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for high-voltage applications and offers excellent electrical characteristics, making it suitable for a variety of power management and control systems. The MOSFET is packaged in a TO-252 (DPAK) surface mount configuration, which is compact and suitable for modern electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 2.4 A |
| Rds(on) - On-Resistance | 2.8 ohm |
| Package Type | TO-252 (DPAK), Surface Mount |
| Power Dissipation (Tc) | 50 W |
| Idm - Peak Drain Current | 9.6 A |
Key Features
- High drain-source breakdown voltage of 600 V, making it suitable for high-voltage applications.
- Low on-resistance of 2.8 ohms, which minimizes power losses and enhances efficiency.
- Continuous drain current of 2.4 A and peak drain current of 9.6 A, providing robust current handling capabilities.
- Compact TO-252 (DPAK) surface mount package, ideal for space-constrained designs.
- High power dissipation of 50 W, ensuring reliable operation in demanding environments.
Applications
The FQD3N60CTM-WS MOSFET is versatile and can be used in various high-voltage applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-voltage switching and power management systems.
- Automotive and industrial control systems.
- Renewable energy systems, such as solar and wind power.
Q & A
- What is the drain-source breakdown voltage of the FQD3N60CTM-WS MOSFET?
The drain-source breakdown voltage is 600 V. - What is the continuous drain current rating of this MOSFET?
The continuous drain current is 2.4 A. - What is the on-resistance of the FQD3N60CTM-WS?
The on-resistance is 2.8 ohms. - In what package is the FQD3N60CTM-WS available?
The MOSFET is available in a TO-252 (DPAK) surface mount package. - What is the peak drain current of this MOSFET?
The peak drain current is 9.6 A. - What is the power dissipation rating of the FQD3N60CTM-WS?
The power dissipation rating is 50 W. - Is the FQD3N60CTM-WS suitable for high-voltage applications?
Yes, it is designed for high-voltage applications. - Can the FQD3N60CTM-WS be used in automotive systems?
Yes, it can be used in automotive and industrial control systems. - Is the FQD3N60CTM-WS still in production?
No, this product is currently listed as obsolete by some suppliers. - Where can I find detailed specifications for the FQD3N60CTM-WS?
Detailed specifications can be found in the datasheet available on the onsemi website and other electronic component distributors like Digi-Key and Mouser.
