FQD5N60CTM-WS
  • Share:

onsemi FQD5N60CTM-WS

Manufacturer No:
FQD5N60CTM-WS
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 2.8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD5N60CTM-WS is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using a proprietary planar stripe and DMOS technology, designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. It is particularly suited for applications requiring high efficiency and reliability in power management.

Key Specifications

Parameter Value Unit
Current - Continuous Drain (Id) @ 25°C 2.8 A
Drain to Source Voltage (Vdss) 600 V
Drive Voltage (Max Rds On, Min Rds On) 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) 2.5W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.4A, 10V
Supplier Device Package TO-252AA
Technology MOSFET (Metal Oxide)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 4V @ 250µA

Key Features

  • High drain current of 2.8 A and high drain-source voltage of 600 V, making it suitable for high-power applications.
  • Low on-state resistance (Rds On) of 2.5 Ω at Vgs = 10 V and Id = 1.4 A, enhancing efficiency and reducing power loss.
  • High avalanche energy strength, ensuring robust performance under transient conditions.
  • Surface mount packaging (TO-252-3, DPak) for easy integration into modern PCB designs.
  • Wide operating temperature range of -55°C to 150°C, suitable for various environmental conditions.
  • High thermal resistance and power dissipation capabilities, ensuring reliable operation in demanding applications.

Applications

  • Switched mode power supplies (SMPS)
  • Active power factor correction (PFC)
  • Electronic lamp ballasts
  • Uninterruptible Power Supplies (UPS)
  • AC-DC power supplies
  • Synchronous rectification for ATX, server, and telecom power supplies
  • Motor drives and control systems
  • Micro solar inverters
  • DC/DC converters
  • Power tools and equipment
  • Battery protection circuits

Q & A

  1. What is the maximum continuous drain current of the FQD5N60CTM-WS MOSFET?

    The maximum continuous drain current is 2.8 A at 25°C.

  2. What is the drain-source voltage rating of the FQD5N60CTM-WS?

    The drain-source voltage (Vdss) is rated at 600 V.

  3. What is the typical on-state resistance (Rds On) of the FQD5N60CTM-WS?

    The typical on-state resistance is 2.5 Ω at Vgs = 10 V and Id = 1.4 A.

  4. What is the operating temperature range of the FQD5N60CTM-WS?

    The operating temperature range is -55°C to 150°C (TJ).

  5. What type of packaging does the FQD5N60CTM-WS use?

    The device is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.

  6. What are some common applications of the FQD5N60CTM-WS MOSFET?

    Common applications include switched mode power supplies, active power factor correction, electronic lamp ballasts, and motor drives.

  7. What is the maximum gate-source voltage (Vgs) for the FQD5N60CTM-WS?

    The maximum gate-source voltage is ±30 V.

  8. What is the thermal resistance from junction to case (RθJC) for the FQD5N60CTM-WS?

    The thermal resistance from junction to case is 2.56 °C/W.

  9. How much power can the FQD5N60CTM-WS dissipate at ambient temperature (Ta)?

    The device can dissipate up to 2.5 W at ambient temperature (Ta).

  10. What is the maximum pulsed drain current (IDM) for the FQD5N60CTM-WS?

    The maximum pulsed drain current is 11.2 A.

  11. Is the FQD5N60CTM-WS RoHS compliant?

    Yes, the FQD5N60CTM-WS is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 49W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.46
652

Please send RFQ , we will respond immediately.

Same Series
FQU5N60CTU
FQU5N60CTU
MOSFET N-CH 600V 2.8A IPAK
FQD5N60CTM
FQD5N60CTM
MOSFET N-CH 600V 2.8A DPAK
FQD5N60CTF
FQD5N60CTF
MOSFET N-CH 600V 2.8A DPAK
FQD5N60CTM_F080
FQD5N60CTM_F080
MOSFET N-CH 600V 2.8A DPAK

Similar Products

Part Number FQD5N60CTM-WS FQD6N60CTM-WS FQD2N60CTM-WS FQD3N60CTM-WS FQD5N50CTM-WS
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Not For New Designs Not For New Designs Obsolete Last Time Buy Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) 4A (Tc) 1.9A (Tc) 2.4A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.4A, 10V 2Ohm @ 2A, 10V 4.7Ohm @ 950mA, 10V 3.4Ohm @ 1.2A, 10V 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 20 nC @ 10 V 12 nC @ 10 V 14 nC @ 10 V 24 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V 810 pF @ 25 V 235 pF @ 25 V 565 pF @ 25 V 625 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 2.5W (Ta), 49W (Tc) 80W (Tc) 2.5W (Ta), 44W (Tc) 50W (Tc) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223