FQD5N60CTM-WS
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onsemi FQD5N60CTM-WS

Manufacturer No:
FQD5N60CTM-WS
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 2.8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD5N60CTM-WS is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using a proprietary planar stripe and DMOS technology, designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. It is particularly suited for applications requiring high efficiency and reliability in power management.

Key Specifications

Parameter Value Unit
Current - Continuous Drain (Id) @ 25°C 2.8 A
Drain to Source Voltage (Vdss) 600 V
Drive Voltage (Max Rds On, Min Rds On) 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) 2.5W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.4A, 10V
Supplier Device Package TO-252AA
Technology MOSFET (Metal Oxide)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 4V @ 250µA

Key Features

  • High drain current of 2.8 A and high drain-source voltage of 600 V, making it suitable for high-power applications.
  • Low on-state resistance (Rds On) of 2.5 Ω at Vgs = 10 V and Id = 1.4 A, enhancing efficiency and reducing power loss.
  • High avalanche energy strength, ensuring robust performance under transient conditions.
  • Surface mount packaging (TO-252-3, DPak) for easy integration into modern PCB designs.
  • Wide operating temperature range of -55°C to 150°C, suitable for various environmental conditions.
  • High thermal resistance and power dissipation capabilities, ensuring reliable operation in demanding applications.

Applications

  • Switched mode power supplies (SMPS)
  • Active power factor correction (PFC)
  • Electronic lamp ballasts
  • Uninterruptible Power Supplies (UPS)
  • AC-DC power supplies
  • Synchronous rectification for ATX, server, and telecom power supplies
  • Motor drives and control systems
  • Micro solar inverters
  • DC/DC converters
  • Power tools and equipment
  • Battery protection circuits

Q & A

  1. What is the maximum continuous drain current of the FQD5N60CTM-WS MOSFET?

    The maximum continuous drain current is 2.8 A at 25°C.

  2. What is the drain-source voltage rating of the FQD5N60CTM-WS?

    The drain-source voltage (Vdss) is rated at 600 V.

  3. What is the typical on-state resistance (Rds On) of the FQD5N60CTM-WS?

    The typical on-state resistance is 2.5 Ω at Vgs = 10 V and Id = 1.4 A.

  4. What is the operating temperature range of the FQD5N60CTM-WS?

    The operating temperature range is -55°C to 150°C (TJ).

  5. What type of packaging does the FQD5N60CTM-WS use?

    The device is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.

  6. What are some common applications of the FQD5N60CTM-WS MOSFET?

    Common applications include switched mode power supplies, active power factor correction, electronic lamp ballasts, and motor drives.

  7. What is the maximum gate-source voltage (Vgs) for the FQD5N60CTM-WS?

    The maximum gate-source voltage is ±30 V.

  8. What is the thermal resistance from junction to case (RθJC) for the FQD5N60CTM-WS?

    The thermal resistance from junction to case is 2.56 °C/W.

  9. How much power can the FQD5N60CTM-WS dissipate at ambient temperature (Ta)?

    The device can dissipate up to 2.5 W at ambient temperature (Ta).

  10. What is the maximum pulsed drain current (IDM) for the FQD5N60CTM-WS?

    The maximum pulsed drain current is 11.2 A.

  11. Is the FQD5N60CTM-WS RoHS compliant?

    Yes, the FQD5N60CTM-WS is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 49W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FQD5N60CTM-WS FQD6N60CTM-WS FQD2N60CTM-WS FQD3N60CTM-WS FQD5N50CTM-WS
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Not For New Designs Not For New Designs Obsolete Last Time Buy Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) 4A (Tc) 1.9A (Tc) 2.4A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.4A, 10V 2Ohm @ 2A, 10V 4.7Ohm @ 950mA, 10V 3.4Ohm @ 1.2A, 10V 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 20 nC @ 10 V 12 nC @ 10 V 14 nC @ 10 V 24 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V 810 pF @ 25 V 235 pF @ 25 V 565 pF @ 25 V 625 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 2.5W (Ta), 49W (Tc) 80W (Tc) 2.5W (Ta), 44W (Tc) 50W (Tc) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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