Overview
The FQD5N60CTM-WS is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using a proprietary planar stripe and DMOS technology, designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. It is particularly suited for applications requiring high efficiency and reliability in power management.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.8 | A |
| Drain to Source Voltage (Vdss) | 600 | V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 | V |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Power Dissipation (Max) | 2.5W (Ta), 49W (Tc) | |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.4A, 10V | |
| Supplier Device Package | TO-252AA | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | ±30V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
Key Features
- High drain current of 2.8 A and high drain-source voltage of 600 V, making it suitable for high-power applications.
- Low on-state resistance (Rds On) of 2.5 Ω at Vgs = 10 V and Id = 1.4 A, enhancing efficiency and reducing power loss.
- High avalanche energy strength, ensuring robust performance under transient conditions.
- Surface mount packaging (TO-252-3, DPak) for easy integration into modern PCB designs.
- Wide operating temperature range of -55°C to 150°C, suitable for various environmental conditions.
- High thermal resistance and power dissipation capabilities, ensuring reliable operation in demanding applications.
Applications
- Switched mode power supplies (SMPS)
- Active power factor correction (PFC)
- Electronic lamp ballasts
- Uninterruptible Power Supplies (UPS)
- AC-DC power supplies
- Synchronous rectification for ATX, server, and telecom power supplies
- Motor drives and control systems
- Micro solar inverters
- DC/DC converters
- Power tools and equipment
- Battery protection circuits
Q & A
- What is the maximum continuous drain current of the FQD5N60CTM-WS MOSFET?
The maximum continuous drain current is 2.8 A at 25°C.
- What is the drain-source voltage rating of the FQD5N60CTM-WS?
The drain-source voltage (Vdss) is rated at 600 V.
- What is the typical on-state resistance (Rds On) of the FQD5N60CTM-WS?
The typical on-state resistance is 2.5 Ω at Vgs = 10 V and Id = 1.4 A.
- What is the operating temperature range of the FQD5N60CTM-WS?
The operating temperature range is -55°C to 150°C (TJ).
- What type of packaging does the FQD5N60CTM-WS use?
The device is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
- What are some common applications of the FQD5N60CTM-WS MOSFET?
Common applications include switched mode power supplies, active power factor correction, electronic lamp ballasts, and motor drives.
- What is the maximum gate-source voltage (Vgs) for the FQD5N60CTM-WS?
The maximum gate-source voltage is ±30 V.
- What is the thermal resistance from junction to case (RθJC) for the FQD5N60CTM-WS?
The thermal resistance from junction to case is 2.56 °C/W.
- How much power can the FQD5N60CTM-WS dissipate at ambient temperature (Ta)?
The device can dissipate up to 2.5 W at ambient temperature (Ta).
- What is the maximum pulsed drain current (IDM) for the FQD5N60CTM-WS?
The maximum pulsed drain current is 11.2 A.
- Is the FQD5N60CTM-WS RoHS compliant?
Yes, the FQD5N60CTM-WS is RoHS compliant.
