Overview
The FQD5N60CTM is an N-Channel QFET® MOSFET produced by onsemi, designed to offer high-performance and reliability in various power management applications. This MOSFET features advanced planar technology, which enhances its operating characteristics and makes it suitable for a wide range of uses, including power supplies, power factor correction (PFC), DC-DC converters, and more. With its robust specifications and compact DPAK package, the FQD5N60CTM is a versatile component for modern electronic systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Channel Type | N | - |
| Maximum Continuous Drain Current | 2.8 A | A |
| Maximum Drain Source Voltage | 600 V | V |
| Package Type | DPAK (TO-252) | - |
| Mounting Type | Surface Mount | - |
| Pin Count | 3 | - |
| Maximum Drain Source Resistance | 2.5 Ω | Ω |
| Channel Mode | Enhancement | - |
| Minimum Gate Threshold Voltage | 2 V | V |
| Maximum Power Dissipation | 49 W (Tc), 2.5 W (Ta) | W |
| Maximum Gate Source Voltage | ±30 V | V |
| Maximum Operating Temperature | +150 °C | °C |
| Minimum Operating Temperature | -55 °C | °C |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | nC |
| Transistor Material | Silicon (Si) | - |
Key Features
- Advanced QFET® Technology: Offers reduced on-state loss by lowering on-resistance (RDS(on)) and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss).
- High Voltage and Current Ratings: Capable of handling up to 600 V drain-source voltage and 2.8 A continuous drain current.
- Compact DPAK Package: Surface mount package (TO-252) suitable for space-efficient designs.
- Enhanced Thermal Performance: High power dissipation capabilities with a maximum junction temperature of +150 °C and thermal resistance of 2.56 °C/W (junction-to-case).
- Reliability and Durability: Designed to minimize voltage spikes and overshoot, lower junction capacitance, and reduce the need for additional external components.
Applications
- Power Supplies: Suitable for high-voltage power supply applications due to its high voltage and current handling capabilities.
- Power Factor Correction (PFC): Used in PFC circuits to improve power factor and efficiency.
- DC-DC Converters: Ideal for use in DC-DC converter designs requiring high efficiency and reliability.
- Lighting Ballasts and Motion Control: Can be used in lighting ballast and motion control systems where high voltage and current are necessary.
- Plasma Display Panels (PDP): Suitable for PDP applications due to its high voltage and current ratings).
Q & A
- What is the maximum continuous drain current of the FQD5N60CTM MOSFET?
The maximum continuous drain current is 2.8 A at 25°C).
- What is the maximum drain-source voltage rating of the FQD5N60CTM?
The maximum drain-source voltage rating is 600 V).
- What type of package does the FQD5N60CTM come in?
The FQD5N60CTM comes in a DPAK (TO-252) package).
- What is the minimum gate threshold voltage of the FQD5N60CTM?
The minimum gate threshold voltage is 2 V).
- What are the maximum and minimum operating temperatures for the FQD5N60CTM?
The operating temperature range is from -55 °C to +150 °C).
- What is the typical gate charge at Vgs = 10 V for the FQD5N60CTM?
The typical gate charge is 15 nC at Vgs = 10 V).
- What are some common applications for the FQD5N60CTM MOSFET?
Common applications include power supplies, PFC, DC-DC converters, lighting ballasts, motion control, and plasma display panels).
- What is the maximum power dissipation for the FQD5N60CTM?
The maximum power dissipation is 49 W (Tc) and 2.5 W (Ta)).
- What is the thermal resistance (junction-to-case) for the FQD5N60CTM?
The thermal resistance (junction-to-case) is 2.56 °C/W).
- Is the FQD5N60CTM suitable for surface mounting?
Yes, the FQD5N60CTM is designed for surface mounting).
