MJD44H11
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onsemi MJD44H11

Manufacturer No:
MJD44H11
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS POWER NPN 8A 80V DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD44H11 is an NPN medium power transistor manufactured by onsemi, designed for general-purpose power and switching applications. This transistor is part of the complementary pair with the MJD45H11 (PNP), which simplifies design processes. It is housed in a DPAK (TO-252) package, making it suitable for surface mount applications. The MJD44H11 is known for its low collector-emitter saturation voltage, fast switching speeds, and high current handling capabilities, making it ideal for various power management and amplification tasks.

Key Specifications

Parameter Value Unit
Transistor Type NPN
Maximum DC Collector Current 8 A
Maximum Collector Emitter Voltage 80 V dc
Maximum Power Dissipation 20 W
Minimum DC Current Gain (hFE) 60
Maximum Emitter Base Voltage 5 V dc
Maximum Operating Junction Temperature 150 °C
Transition Frequency (ft) 85 MHz
Collector Capacitance (Ccb) 45 pF
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Dimensions 6.73 x 2.38 x 6.22 mm

Key Features

  • Low collector-emitter saturation voltage (VCE(sat) = 1 Vdc at IC = 8 Adc, IB = 0.4 Adc)
  • Fast switching speeds with delay and rise times of 300 ns and fall time of 140 ns
  • Complementary pairs (MJD44H11 NPN and MJD45H11 PNP) simplify designs
  • Electrically similar to popular D44H/D45H series
  • Pb-free, halogen-free, and RoHS compliant
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
  • Epoxy meets UL 94 V-0 @ 0.125 in

Applications

  • General purpose power and switching applications
  • Output or driver stages in switching regulators, converters, and power amplifiers
  • Power switching or amplification applications
  • Automotive and other applications requiring high reliability and specific control change requirements

Q & A

  1. What is the maximum DC collector current of the MJD44H11 transistor?

    The maximum DC collector current is 8 A

  2. What is the maximum collector-emitter voltage of the MJD44H11 transistor?

    The maximum collector-emitter voltage is 80 V dc

  3. What is the package type of the MJD44H11 transistor?

    The package type is DPAK (TO-252)

  4. What are the dimensions of the MJD44H11 transistor?

    The dimensions are 6.73 x 2.38 x 6.22 mm

  5. What is the maximum operating junction temperature of the MJD44H11 transistor?

    The maximum operating junction temperature is 150 °C

  6. Is the MJD44H11 transistor RoHS compliant?

    Yes, the MJD44H11 transistor is Pb-free, halogen-free, and RoHS compliant

  7. What are some typical applications of the MJD44H11 transistor?

    Typical applications include general purpose power and switching, output or driver stages in switching regulators, converters, and power amplifiers, and automotive applications

  8. What is the transition frequency (ft) of the MJD44H11 transistor?

    The transition frequency (ft) is 85 MHz

  9. Does the MJD44H11 transistor have a complementary PNP type?

    Yes, the complementary PNP type is the MJD45H11

  10. Is the MJD44H11 transistor AEC-Q101 qualified?

    Yes, the MJD44H11 transistor is AEC-Q101 qualified and PPAP capable

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 2A, 1V
Power - Max:20 W
Frequency - Transition:85MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MJD44H11 MJD44H11J MJD44H11G
Manufacturer onsemi Nexperia USA Inc. onsemi
Product Status Obsolete Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A, 1V 60 @ 2A, 1V 40 @ 4A, 1V
Power - Max 20 W 1.75 W 1.75 W
Frequency - Transition 85MHz 160MHz 85MHz
Operating Temperature - 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK

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