BSH114,215
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Nexperia USA Inc. BSH114,215

Manufacturer No:
BSH114,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 500MA TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The BSH114,215 is a compact N-channel MOSFET produced by Nexperia USA Inc. This device is designed for efficient power management and is particularly suited for automotive and industrial applications. It features a small footprint in the SOT-23 (SOT23-3) package, making it ideal for space-constrained designs. The MOSFET is known for its high performance and reliability in handling various power requirements.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Part Number BSH114,215
Package SOT-23 (SOT23-3)
Product Type MOSFET
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 850 mA
Rds On - Drain-Source Resistance 500 mOhms
Vgs - Gate-Source Voltage -20 V, +20 V
Threshold Voltage 2 V
Qg - Gate Charge 4.6 nC
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) +150
Pd - Power Dissipation 830 mW
Channel Mode Enhancement
Mounting Style SMD/SMT
RoHS Compliance True

Key Features

  • Compact SOT-23 (SOT23-3) package for space-efficient designs.
  • High performance N-channel MOSFET with 100 V drain-source breakdown voltage.
  • Continuous drain current of 850 mA and low on-resistance of 500 mOhms.
  • Wide operating temperature range from -55°C to +150°C.
  • Enhancement mode operation with a threshold voltage of 2 V.
  • Low gate charge of 4.6 nC for efficient switching.
  • RoHS compliant, ensuring environmental sustainability.

Applications

  • Automotive systems: Suitable for various automotive applications due to its robust performance and wide operating temperature range.
  • Industrial power management: Ideal for industrial power management systems requiring high reliability and efficiency.
  • Consumer electronics: Can be used in consumer electronics where compact, high-performance MOSFETs are needed.
  • Power supplies: Applicable in power supply units requiring efficient power switching.

Q & A

  1. What is the part number of this MOSFET?

    The part number of this MOSFET is BSH114,215.

  2. Who is the manufacturer of the BSH114,215 MOSFET?

    The manufacturer is Nexperia USA Inc.

  3. What is the package type of the BSH114,215 MOSFET?

    The package type is SOT-23 (SOT23-3).

  4. What is the drain-source breakdown voltage of the BSH114,215 MOSFET?

    The drain-source breakdown voltage is 100 V.

  5. What is the continuous drain current of the BSH114,215 MOSFET?

    The continuous drain current is 850 mA.

  6. What is the on-resistance of the BSH114,215 MOSFET?

    The on-resistance is 500 mOhms.

  7. What is the operating temperature range of the BSH114,215 MOSFET?

    The operating temperature range is from -55°C to +150°C.

  8. Is the BSH114,215 MOSFET RoHS compliant?

    Yes, the BSH114,215 MOSFET is RoHS compliant.

  9. What are the typical applications of the BSH114,215 MOSFET?

    Typical applications include automotive systems, industrial power management, consumer electronics, and power supplies.

  10. What is the channel mode of the BSH114,215 MOSFET?

    The channel mode is enhancement.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:138 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 830mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSH114,215 BSH111,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 55 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 500mOhm @ 500mA, 10V 4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 4V @ 1mA 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 10 V 1 nC @ 8 V
Vgs (Max) ±20V ±10V
Input Capacitance (Ciss) (Max) @ Vds 138 pF @ 25 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 830mW (Tc) 830mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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