BSH111,235
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Nexperia USA Inc. BSH111,235

Manufacturer No:
BSH111,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 335MA TO236AB
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BSH111,235 is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) produced by Nexperia USA Inc. This N-Channel MOSFET is designed for a variety of applications requiring high voltage and current handling capabilities. It is part of Nexperia's TrenchMOS™ series, known for its high efficiency and reliability in power management and switching applications.

Key Specifications

Parameter Value
Part Number BSH111,235
Manufacturer Nexperia USA Inc.
Description MOSFET N-CH 55V 0.335A SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Number of Pins 3
Current - Continuous Drain (Id) @ 25℃ 335mA Ta
Drive Voltage (Max Rds On, Min Rds On) 1.8V 4.5V
Power Dissipation (Max) 830mW Tc
Operating Temperature -65°C ~ 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Key Features

  • High Voltage Handling: The BSH111,235 can handle a drain to source voltage (Vdss) of up to 55V, ensuring safe operation in high voltage applications.
  • Low Drive Voltage: It operates with a drive voltage of 1.8V to 4.5V, enabling fast and stable switching operations.
  • Compact Packaging: The MOSFET is available in the TO-236-3, SC-59, and SOT-23-3 packages, making it suitable for space-constrained designs.
  • Wide Operating Temperature Range: It operates within a temperature range of -65°C to 150°C, making it adaptable to various application scenarios.
  • Environmental Compliance: The device is compliant with EU RoHS, CN RoHS, and ELV directives, ensuring it meets environmental standards.

Applications

  • Motor Control: Used in motor control circuits for applications such as variable frequency drives (VFDs), robotics, and electric vehicles.
  • Switching Devices: Employed as switching devices in digital and analog circuits, including data switches and multiplexers.
  • Power Management: Utilized in electronic products like DC-DC converters, LED drivers, and LCD TVs for controlling power switches.
  • New Energy Sector: Applied in the field of new energy, such as wind power and photovoltaics, for high voltage and high current conversion and control.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BSH111,235?

    The maximum drain to source voltage (Vdss) is 55V.

  2. What is the continuous drain current (Id) at 25°C for the BSH111,235?

    The continuous drain current (Id) at 25°C is 335mA (Ta).

  3. What are the drive voltage ranges for the BSH111,235?

    The drive voltage ranges are 1.8V to 4.5V.

  4. What is the maximum power dissipation for the BSH111,235?

    The maximum power dissipation is 830mW (Tc).

  5. What is the operating temperature range of the BSH111,235?

    The operating temperature range is -65°C to 150°C (TJ).

  6. Is the BSH111,235 compliant with environmental regulations?

    Yes, it is compliant with EU RoHS, CN RoHS, and ELV directives.

  7. What are the common applications of the BSH111,235?

    Common applications include motor control, switching devices, power management, and new energy sector applications.

  8. What package types are available for the BSH111,235?

    The device is available in TO-236-3, SC-59, and SOT-23-3 packages.

  9. What is the moisture sensitivity level (MSL) of the BSH111,235?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  10. What is the peak reflow temperature for the BSH111,235?

    The peak reflow temperature is 260°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 8 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSH111,235
BSH111,235
MOSFET N-CH 55V 335MA TO236AB

Similar Products

Part Number BSH111,235 BSH112,235 BSH111,215
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 60 V 55 V
Current - Continuous Drain (Id) @ 25°C 335mA (Ta) 300mA (Ta) 335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 4.5V, 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 4.5V 5Ohm @ 500mA, 10V 4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA 2V @ 1mA 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 8 V - 1 nC @ 8 V
Vgs (Max) ±10V ±15V ±10V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V 40 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB SOT-23 (TO-236AB) TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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