2N7002HWX
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Nexperia USA Inc. 2N7002HWX

Manufacturer No:
2N7002HWX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
2N7002HW/SOT323/SC-70
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002HWX is a 60 V, 300 mA N-channel enhancement mode Trench MOSFET produced by Nexperia USA Inc. This device utilizes Trench MOSFET technology and is packaged in a small footprint SOT23 (SC-70) package. It is designed for low power applications and offers several key benefits, including low on-resistance, ESD protection, and a compact surface mount design.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDS 60 V
Drain Current ID 300 mA
Gate Threshold Voltage VGS(TH) 1.0 - 2.5 V
Drain-Source On Resistance RDS(on) 1.19 - 1.6 Ω (VGS = 10 V, ID = 500 mA)
Input Capacitance CISS 24.5 pF (VGS = 0 V, f = 1 MHz, VDS = 20 V)
Output Capacitance COSS 4.2 pF
Reverse Transfer Capacitance CRSS 2.2 pF
Total Gate Charge QG(TOT) 0.7 nC (VGS = 4.5 V, VDS = 10 V; ID = 200 mA)
Package Type SOT23 (SC-70)

Key Features

  • ESD Protected: The device is protected against electrostatic discharge, enhancing its reliability in various applications.
  • Low RDS(on): Offers low on-resistance, which is beneficial for minimizing power losses and improving efficiency.
  • Small Footprint Surface Mount Package: The SOT23 (SC-70) package is compact, making it suitable for space-constrained designs.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensures environmental compliance and safety.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality standards.

Applications

  • Low Side Load Switch: Ideal for switching loads in low-side configurations.
  • Level Shift Circuits: Used in circuits that require voltage level shifting.
  • DC-DC Converter: Suitable for use in DC-DC conversion applications due to its low on-resistance and high efficiency.
  • Portable Applications: Used in devices such as digital still cameras, personal digital assistants (PDAs), and other portable electronics.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002HWX?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical drain current of the 2N7002HWX?

    The typical drain current (ID) is 300 mA.

  3. What is the gate threshold voltage range of the 2N7002HWX?

    The gate threshold voltage (VGS(TH)) ranges from 1.0 to 2.5 V.

  4. What is the on-resistance of the 2N7002HWX?

    The on-resistance (RDS(on)) is typically between 1.19 and 1.6 Ω at VGS = 10 V and ID = 500 mA.

  5. Is the 2N7002HWX ESD protected?
  6. What package type is the 2N7002HWX available in?

    The device is packaged in a SOT23 (SC-70) package.

  7. Is the 2N7002HWX RoHS compliant?
  8. What are some common applications of the 2N7002HWX?
  9. Is the 2N7002HWX suitable for automotive applications?
  10. What is the typical input capacitance of the 2N7002HWX?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002HWX 2N7002HSX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Tc) 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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