2N7002HWX
  • Share:

Nexperia USA Inc. 2N7002HWX

Manufacturer No:
2N7002HWX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
2N7002HW/SOT323/SC-70
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002HWX is a 60 V, 300 mA N-channel enhancement mode Trench MOSFET produced by Nexperia USA Inc. This device utilizes Trench MOSFET technology and is packaged in a small footprint SOT23 (SC-70) package. It is designed for low power applications and offers several key benefits, including low on-resistance, ESD protection, and a compact surface mount design.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDS 60 V
Drain Current ID 300 mA
Gate Threshold Voltage VGS(TH) 1.0 - 2.5 V
Drain-Source On Resistance RDS(on) 1.19 - 1.6 Ω (VGS = 10 V, ID = 500 mA)
Input Capacitance CISS 24.5 pF (VGS = 0 V, f = 1 MHz, VDS = 20 V)
Output Capacitance COSS 4.2 pF
Reverse Transfer Capacitance CRSS 2.2 pF
Total Gate Charge QG(TOT) 0.7 nC (VGS = 4.5 V, VDS = 10 V; ID = 200 mA)
Package Type SOT23 (SC-70)

Key Features

  • ESD Protected: The device is protected against electrostatic discharge, enhancing its reliability in various applications.
  • Low RDS(on): Offers low on-resistance, which is beneficial for minimizing power losses and improving efficiency.
  • Small Footprint Surface Mount Package: The SOT23 (SC-70) package is compact, making it suitable for space-constrained designs.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensures environmental compliance and safety.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality standards.

Applications

  • Low Side Load Switch: Ideal for switching loads in low-side configurations.
  • Level Shift Circuits: Used in circuits that require voltage level shifting.
  • DC-DC Converter: Suitable for use in DC-DC conversion applications due to its low on-resistance and high efficiency.
  • Portable Applications: Used in devices such as digital still cameras, personal digital assistants (PDAs), and other portable electronics.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002HWX?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical drain current of the 2N7002HWX?

    The typical drain current (ID) is 300 mA.

  3. What is the gate threshold voltage range of the 2N7002HWX?

    The gate threshold voltage (VGS(TH)) ranges from 1.0 to 2.5 V.

  4. What is the on-resistance of the 2N7002HWX?

    The on-resistance (RDS(on)) is typically between 1.19 and 1.6 Ω at VGS = 10 V and ID = 500 mA.

  5. Is the 2N7002HWX ESD protected?
  6. What package type is the 2N7002HWX available in?

    The device is packaged in a SOT23 (SC-70) package.

  7. Is the 2N7002HWX RoHS compliant?
  8. What are some common applications of the 2N7002HWX?
  9. Is the 2N7002HWX suitable for automotive applications?
  10. What is the typical input capacitance of the 2N7002HWX?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.34
136

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number 2N7002HWX 2N7002HSX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Tc) 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

BAT54S-QR
BAT54S-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAS316/DG/B3,135
BAS316/DG/B3,135
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
BC807RAZ
BC807RAZ
Nexperia USA Inc.
BC807RA/SOT1268/DFN1412-6
BCP56-10,115
BCP56-10,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC869,115
BC869,115
Nexperia USA Inc.
TRANS PNP 20V 1A SOT89
PDTC144EU,115
PDTC144EU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
BUK9Y14-40B,115
BUK9Y14-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 56A LFPAK56
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74LVC240ADB,118
74LVC240ADB,118
Nexperia USA Inc.
IC BUFFER INVERT 3.6V 20SSOP
74AHC273PW,112
74AHC273PW,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20TSSOP
74LVC1G00GW-Q100H
74LVC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
HEF4094BTTJ
HEF4094BTTJ
Nexperia USA Inc.
IC SHIFT/STORE REGISTER