2N7002HWX
  • Share:

Nexperia USA Inc. 2N7002HWX

Manufacturer No:
2N7002HWX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
2N7002HW/SOT323/SC-70
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002HWX is a 60 V, 300 mA N-channel enhancement mode Trench MOSFET produced by Nexperia USA Inc. This device utilizes Trench MOSFET technology and is packaged in a small footprint SOT23 (SC-70) package. It is designed for low power applications and offers several key benefits, including low on-resistance, ESD protection, and a compact surface mount design.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDS 60 V
Drain Current ID 300 mA
Gate Threshold Voltage VGS(TH) 1.0 - 2.5 V
Drain-Source On Resistance RDS(on) 1.19 - 1.6 Ω (VGS = 10 V, ID = 500 mA)
Input Capacitance CISS 24.5 pF (VGS = 0 V, f = 1 MHz, VDS = 20 V)
Output Capacitance COSS 4.2 pF
Reverse Transfer Capacitance CRSS 2.2 pF
Total Gate Charge QG(TOT) 0.7 nC (VGS = 4.5 V, VDS = 10 V; ID = 200 mA)
Package Type SOT23 (SC-70)

Key Features

  • ESD Protected: The device is protected against electrostatic discharge, enhancing its reliability in various applications.
  • Low RDS(on): Offers low on-resistance, which is beneficial for minimizing power losses and improving efficiency.
  • Small Footprint Surface Mount Package: The SOT23 (SC-70) package is compact, making it suitable for space-constrained designs.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensures environmental compliance and safety.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality standards.

Applications

  • Low Side Load Switch: Ideal for switching loads in low-side configurations.
  • Level Shift Circuits: Used in circuits that require voltage level shifting.
  • DC-DC Converter: Suitable for use in DC-DC conversion applications due to its low on-resistance and high efficiency.
  • Portable Applications: Used in devices such as digital still cameras, personal digital assistants (PDAs), and other portable electronics.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002HWX?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical drain current of the 2N7002HWX?

    The typical drain current (ID) is 300 mA.

  3. What is the gate threshold voltage range of the 2N7002HWX?

    The gate threshold voltage (VGS(TH)) ranges from 1.0 to 2.5 V.

  4. What is the on-resistance of the 2N7002HWX?

    The on-resistance (RDS(on)) is typically between 1.19 and 1.6 Ω at VGS = 10 V and ID = 500 mA.

  5. Is the 2N7002HWX ESD protected?
  6. What package type is the 2N7002HWX available in?

    The device is packaged in a SOT23 (SC-70) package.

  7. Is the 2N7002HWX RoHS compliant?
  8. What are some common applications of the 2N7002HWX?
  9. Is the 2N7002HWX suitable for automotive applications?
  10. What is the typical input capacitance of the 2N7002HWX?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.34
136

Please send RFQ , we will respond immediately.

Same Series
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N7002HWX 2N7002HSX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Tc) 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
BAT720,235
BAT720,235
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA TO236AB
PMEG2020EH/6X
PMEG2020EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
PEMH11,315
PEMH11,315
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
PEMD2,315
PEMD2,315
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
BC807-16HR
BC807-16HR
Nexperia USA Inc.
BC807-16H/SOT23/TO-236AB
PMST3904/ZLF
PMST3904/ZLF
Nexperia USA Inc.
PMST3904/ZLF
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
74LVC4066PW,112
74LVC4066PW,112
Nexperia USA Inc.
IC SWITCH QUAD SPST 14TSSOP
74HC2G66DP-Q100H
74HC2G66DP-Q100H
Nexperia USA Inc.
IC SWITCH DUAL SPST 8TSSOP
74HC04D-Q100,118
74HC04D-Q100,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN